SDP07N65 SDF07N65

SDP07N65
SDF07N65
S a mHop Microelectronics C orp.
Ver 3.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
650V
7A
1.2 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
G
G D S
G D S
SDF SERIES
TO-220F
SDP SERIES
TO-220
ORDERING INFORMATION
Ordering Code
Package
S
Tube
RoHS Status
Halogen Free
Tube
Pb Free
SDF07N65
Tube
Halogen Free
07N65
Tube
Pb Free
SDP07N65HZ
TO-220
Marking Code
SDP07N65
SDP07N65PZ
TO-220
07N65
SDF07N65HZ
TO-220F
SDF07N65PZ
TO-220F
Delivery Mode
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
SDP07N65 SDF07N65
650
±30
±30
TC=25°C
TC=70°C
a
a
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
7
7
A
5.9
5.9
A
21
c
21
133
66
W
93
46
W
-55 to 175
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.1
62.5
Details are subject to change without notice.
A
mJ
422
TC=25°C
TC=70°C
Units
V
V
2.2
62.5
°C
°C/W
°C/W
Dec,24,2013
1
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SDP07N65
SDF07N65
Ver 3.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
Drain-Source On-State Resistance
RDS(ON)
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
650
Typ
VGS= ±30V , VDS=0V
VDS=20V , ID=3.5A
2
Units
1
±100
uA
nA
4
1.4
V
ohm
V
VDS=520V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=3.5A
Max
3
1.2
5.5
S
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
VDS=25V,VGS=0V
f=1.0MHz
1025
110
13
pF
pF
pF
40
ns
21
ns
53
ns
23
ns
b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=325V,ID=1A,VGS=10V
21
nC
Qgs
Gate-Source Charge
3.6
nC
Qgd
Gate-Drain Charge
VDS=325V,ID=1A,
VGS=10V
8
nC
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.78
1.4
V
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5mH,VDD = 100V.(See Figure12)
Dec,24,2013
2
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SDP07N65
SDF07N65
Ver 3.0
5
15
VGS = 7V
ID, Drain Current(A)
I D, Drain Current(A)
VGS = 10V
12
VGS = 6V
9
6
VGS = 5V
3
0
0
5
15
10
25
20
4
Tj = 125 C
3
-55 C
2
25 C
1
0
30
0
VDS, Drain-to-Source Voltage(V)
3.0
2.5
2.6
R DS(on), On-Resistance
Normalized
R DS(on)( Ω)
3.0
2.0
VGS = 10V
1.0
0.5
0.0
3.6
4.8
6.0
7.2
VGS = 10V
ID = 3.5A
2.2
1.8
1.4
1.0
0
1
3
6
9
12
0
15
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
VDS = VGS
ID = 250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.4
25
Tj, Junction Temperature(° C )
I D, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
2.4
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
1.5
1.2
V GS, Gate-to-Source Voltage(V)
75 100 125 150
1.15
ID = 250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
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SDP07N65
SDF07N65
Ver 3.0
20.0
3.0
Is, Source-drain current(A)
VGS = 3.5V
R DS(on)(Ω)
2.5
2.0
125 C
1.5
75 C
1.0
25 C
0.5
0
0
2
4
6
8
10.0
5.0
25 C
1.0
10
0
V GS, Gate-to-Source Voltage(V)
0.6
0.9
1.2
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
1800
1500
C, Capacitance(pF)
0.3
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
Ciss
900
600
Coss
Crss
300
0
20
10
40
30
50
VDS = 325V
ID = 1A
8
6
4
2
0
0
0
VDS, Drain-to-Source Voltage(V)
0.1
1
100
18
Lim
S
(O
N)
1m
DC
21
24
s
10
0u
us
s
1
VGS=10V
Single Pulse
TC=25 C
0.1
0.1
1000
10
it
10
0.03
10
15
RD
Lim
S
VGS=10V
Single Pulse
TC=25 C
0.03
12
ms
1
0.1
9
10
RD
us
s
ms
DC
s
10
0u
10
(O
N)
1m
6
Figure 10. Gate Charge
I D , Drain C urrent (A)
10
it
10
3
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
I D , Drain C urrent (A)
75 C
125 C
1
10
100
1000
V DS , Drain-S ource V oltage (V )
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF07N65
Figure 11a. Maximum Safe Operating
Area for SDP07N65
Dec,24,2013
4
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SDP07N65
SDF07N65
Ver 3.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 12a.
F igure 12b.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP07N65
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
0.1
P DM
0.02
t1
0.01
t2
S ingle P uls e
0.01
0.00001
0.0001
1.
2.
3.
4.
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF07N65
Dec,24,2013
5
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SDP07N65
SDF07N65
Ver 3.0
Dec,24,2013
6
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SDP07N65
SDF07N65
Ver 3.0
TO-220F
A1
E
Q1
žP
A3
Q
D1
D
L2
L1
b1x3
L
bx3
c
e
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
žP
E1
A
A2
MILLIMETERS
MAX
MIN
4.90
4.50
2.35
2.75
2.15
2.92
0.50
0.65
0.90
0.70
1.55
1.15
0.70
0.45
16.30
15.30
6.67
6.77
9.90
10.32
9.20
9.40
2.54 REF.
9.45
10.05
2.79
3.60
15.60
16.00
3.40
3.20
7.10
6.90
3.55
2.90
Dec,24,2013
7
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SDP07N65
SDF07N65
Ver 3.0
TO-220 Tube
Dec,24,2013
8
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SDP07N65
SDF07N65
Ver 3.0
F Tube
Dec,24,2013
9
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SDP07N65
SDF07N65
Ver 3.0
TOP MARKING DEFINITION
TO-220 (Halogen Free)
SamHop Logo
SDP07N65
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220 (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
07N65
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
10
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SDP07N65
SDF07N65
Ver 3.0
TOP MARKING DEFINITION
TO-220F (Halogen Free)
SamHop Logo
SDF07N65
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
TO-220F (Pb Free)
Wafer Lot Number
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
07N65
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11
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