IRFQ110 MECHANICAL DATA Dimensions in mm (inches) QUAD N–CHANNEL ENHANCEMENT MOSFETS 7.62(.300) 1.27(.050) REF 1.27(.050) REF 7.62(.300) PIN 1 INDEX 1 0.64(.025) REF 1.91(.075) FEATURES 2.16(.085) 25 1.91(.075) 1.60(.063) 19 18 • LIGHTWEIGHT • MILITARY SCREENING LEVEL OPTIONS 28 1 12 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • SPACE QUALITY LEVELS OPTIONS 11 11.44(.450) SQ LCC28 Ceramic Package Pin 1 - Gate 1 Pin 4 - N/C Pin 7 - N/C Pin 10 - Source 2 Pin 13 - Drain 2 Pin 16 - Source 3 Pin 19 - Drain 3 Pin 22 - Gate 4 Pin 25 - N/C Pin 2 - Source 1 Pin 5 - Drain 1 Pin 8 - Gate 2 Pin 11 - N/C Pin 14 - N/C Pin 17 - Source 3 Pin 20 - Drain 3 Pin 23 - Source 4 Pin 26 - Drain 4 Pin 28 - N/C Pin 3 - Source 1 Pin 6 - Drain 1 Pin 9 - Source 2 Pin 12 - Drain 2 Pin 15 - Gate 3 Pin 18 - N/C Pin 21 - N/C Pin 24 - Source 4 Pin 27 - Drain 4 APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS FOR EACH CHIP(Tcase = 25°C unless otherwise stated) 100V VDS Drain Source Voltage ID Continuous Drain Current 1A ID @Tc = 100°C Continuous Drain Current 0.6A IDM Pulsed Drain Current * VGS Gate Source Voltage ±20V PD Maximum Power Dissipation 4.5W RθJC Thermal Resistance Junction to Case TJ,Tstg Operating and Storage Temperature Range 4A 27.78°C/W -55 to +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number **** Issue 1 IRFQ110 ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 1mA 100 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2.0 Typ. Max. 4.0 IGSSF Gate – Source Leakage Forward VGS = 20V 100 IGSSR Gate – Source Leakage Reverse VGS = -20V -100 IDSS Zero Gate Voltage Drain Current VDS = 80V. VGS =0 25 TC = 125°C 250 Static Drain Source On-State VGS = 10V ID = 0.6A 0.70 Resistance* VGS = 10V ID = 1.0A 0.80 gfs Forward Transductance * VDS = 15V IDS = 0.6A Ciss Input Capacitance VGS = 0 VDS = 25V Coss Output Capacitance f = 1MHz Crss Reverse Transfer Capacitance Qg Total Gate Charge VGS = 10V Qgs Gate – Source Charge IDS = 1.0A Qgd Gate – Drain Charge td(on) Turn–On Delay Time VDD = 50V tr Rise Time RG = 24Ω 25 td(off) Turn–Off Delay Time (MOSFET switching times are essentially 40 tf Fall Time independent of operating temperature.) 40 IS BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current Body RDS(on) 0.86 Unit V nA µA Ω Ω S( ) 180 pF 82 15 VDS = 50V 15 7.5 7.5 ID = 1.0A nC 20 ns , 1.0 A Diode symbol showing the intergal ISM Source Current* (Body Diode) P-N junction rectifier. VSD Diode Forward Voltage * IS = 1.0A VGS = 0 1.5 V trr Reverse Recovery Time IF =1.0A TJ = 25°C 200 ns QRR Reverse Recovery Charge di / dt = 100A/µs VDD = 50V 0.83 µC / 5 4.0 Notes * Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number **** Issue 1