RU60C20R5 Complementary Advanced Power MOSFET Features Pin Description • N-Channel 60V/20A, RDS (ON) =30mΩ(Typ.) @ VGS=10V D1/D2 • P-Channel -60V/-15A, RDS (ON) =110mΩ (Typ (Typ.)) @ VGS=-10V = 10V • Reliable and Rugged • ESD Protected • Lead Free and Green Available S2 G2 G1 S1 TO220-5 D2/D1 Applications pp • Power Management G2 G1 S2 S1 Complementary MOSFET Absolute Maximum Ratings Parameter Symbol N-Channel P-Channel Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage g 60 -60 VGSS Gate-Source Voltage ±16 ±16 Maximum Junction Temperature 175 175 °C -55 to 175 -55 to 175 °C TC=25°C 20 -15 A TC=25°C 80 -60 A TC=25°C 20 -15 TC=100°C 16 -10 TC=25°C 50 50 TC=100°C 25 25 3 3 °C/W 62.5 62.5 °C/W 42 72 mJ TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation IDP RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient A W Drain-Source Avalanche Ratings ③ EAS Avalanche a a c e Energy, e gy, S Single g e Pulsed u sed Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 1 www.ruichips.com RU60C20R5 Electrical El t i l Characteristics Ch t i ti (TC=25°C Unless Otherwise Noted) Symbol Parameter RU60C20R5 Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source S Breakdown Voltage g VGS=0V, IDS=250µA N 60 VGS=0V, 0V IDS=-250µA 250 A P -60 VDS=60V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VDS=-60V, VGS=0V TJ=125°C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance V 1 N 30 -1 P µA -30 VGS, IDS=250µA 250 A VDS=V N 2 4 VDS=VGS, IDS=-250µA P -2 -4 VGS=±16V, VDS=0V N ±10 VGS=±16V, VDS=0V P ±10 VGS=10V, IDS=10A N 30 50 VGS=-10V, 10V IDS=-8A 8A P 110 120 ISD=20A, VGS=0V N 1.2 ISD=-15A, VGS=0V P -1.2 V µA mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time N-Channel ISD=20A, dlSD/dt=100A/µs N 32 P 52 Qrr Reverse Recovery Charge P-Channel ISD=-15A, dlSD/dt=100A/µs N 63 P 75 N 1.8 P 12 N-Channel VGS=0V,VDS=30V, Frequency=1.0MHz N 1340 P 910 N 285 P-Channel VGS=0V,V =0V VDS=-30V, =-30V Frequency=1.0MHz P 625 N 90 P 170 V ns nC ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 VGS=0V,V =0V VDS=0V,F=1MHz =0V F=1MHz 2 Ω pF www.ruichips.com RU60C20R5 Electrical El t i l Characteristics Ch t i ti (TC=25°C Unless Otherwise Noted) Symbol Parameter RU60C20R5 Test Condition Min. Typ. Max. Unit ⑤ Dynamic Characteristics td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time 12 P N-Channel VDD=30V, RL=1.5Ω,IDS=20A, N VGEN=10V, RG=6Ω P P-Channel N VDD=-30V, RL=2Ω,IDS=-15A, P VGEN= -10V, RG=6Ω 16 15 24 28 ns 35 N 15 P 20 N-Channel VDS=48V, VGS=10V, IDS=20A N 53 P 32 N 8 P-Channel VDS=-48V, VGS= -10V, IDS=-15A P 5 N 27 P 11 Turn-off Fall Time Gate Charge Characteristics ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: N nC ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, N-Channel:IAS =13A, VDD =48V, RG = 50Ω,P-Channel: IAS =-17A, VDD =-48V, RG = 50Ω,Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 3 www.ruichips.com RU60C20R5 Ordering O d i and d Marking M ki Information I f ti Device Marking Package RU60C20R5 RU60C20R5 TO220-5 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 Packaging Quantity Reel Size Tape width Tube 4 50 - - www.ruichips.com RU60C20R5 Typical Characteristics(N-Channel) T i l Ch t i ti (N Ch l) Power Dissipation Drain Current 25 50 20 ID - Drain Curre ent (A) PD - Powe er (W) 60 40 15 30 10 20 10 5 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 Tj - Junction Temperature (°C) 10µs 100µs 1ms 10ms DC 1 0.1 0.01 TC=25°C 0.01 125 150 175 Drain Current 200 RDS(ON) - On - Resistan nce (mΩ) 10 100 Ids=10A 150 RDS(ON) limite ed ID - Drain Current (A A) Safe Operation Area 100 75 Tj - Junction Temperature (°C) 0.1 1 10 100 50 0 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Therrmal Response (°C/W W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single g Pulse 0.01 RθJC=3°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 5 www.ruichips.com RU60C20R5 Typical Characteristics(N-Channel) T i l Ch t i ti (N Ch l) Output Characteristics 8V 80 10V 6V 60 5V 40 20 3V 0 0 1 2 3 Drain-Source On Resistance 100 RDS(ON) - On Resista ance (mΩ) ID - Drain Cu urrent (A) 100 4 80 60 10V 40 20 0 5 0 5 10 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C ( ) Rds(on)=30mΩ -25 0 25 50 75 100 125 TJ=175°C 150 TJ=25°C 1 0.1 0.2 175 0.4 Capacitance VGS - G Gate-Source Voltage e (V) C - Capacitance (pF F) Frequency=1 0MHz Frequency=1.0MHz 2000 Ciss 1000 Coss Crss 0 1 10 100 1 1.2 1.4 10 VDS 48V VDS=48V IDS=20A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 0.8 Gate Charge 2500 500 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 1500 30 10 0.0 -50 25 Source-Drain Diode Forward 100 VGS=10V ID=10A 0.5 20 ID - Drain Current (A) IS - Source Currentt (A) No ormalized On Resisttance 2.5 15 20 40 60 QG - Gate Charge (nC) 6 www.ruichips.com RU60C20R5 Typical Characteristics(P-Channel) T i l Ch t i ti (P Ch l) Power Dissipation Drain Current 16 14 50 -ID - Drain Curre ent (A) PD - Powe er (W) 60 12 40 10 30 20 10 8 6 4 2 0 0 0 25 50 75 100 125 150 VGS=-10V 25 175 50 TJ - Junction Temperature (°C) 10µs 100µs 1ms 10ms 1 DC 0.1 0.01 150 175 Ids=-8A 0.1 1 300 200 100 TC=25°C 0.01 125 Drain Current 500 RDS(ON) - On - Resistan nce (mΩ) 10 100 400 RDS(ON) lim mited -IID - Drain Current (A A) Safe Operation Area 100 75 TJ - Junction Temperature (°C) 10 0 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJC - Therrmal Response (°C/W W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=3°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2013 7 www.ruichips.com RU60C20R5 Typical Characteristics(P-Channel) T i l Ch t i ti (P Ch l) Output Characteristics -8V -10V 50 Drain-Source On Resistance 500 RDS(ON) - On Resista ance (mΩ) -ID - Drain Cu urrent (A) 60 400 -6V 40 300 30 -5V 200 20 10 100 -3V 0 0 1 2 -10V 3 4 0 5 0 5 10 -VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C ( ) Rds(on)=110mΩ -25 0 25 50 75 100 125 150 TJ=175°C 10 TJ=25°C 1 0.1 0.0 -50 0.2 175 0.4 Capacitance -VGS - G Gate-Source Voltage e (V) C - Capacitance (pF F) Frequency=1 0MHz Frequency=1.0MHz 1200 Ciss 900 600 Coss 300 Crss 10 100 -VDS - Drain-Source Voltage (V) Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2013 0.8 1 1.2 1.4 Gate Charge 1500 1 0.6 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 0 25 Source-Drain Diode Forward 100 VGS=-10V ID=-8A 0.5 20 -ID - Drain Current (A) -IS - Source Currentt (A) No ormalized On Resisttance 2.5 15 8 10 VDS 48V VDS=-48V IDS=-15A 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 QG - Gate Charge (nC) www.ruichips.com RU60C20R5 Package Information P k I f ti E A TO220-5 1 A Q P 1 H θ1 P E D 3 L 2 L D θ θ1 2 P 1 1 PIN #1 IDD 1脚标记 2 A b L C e 3 θ 1 E SYMBOL A A1 A2 b c D D1 E E1 e H1 MM MIN 4.45 1.22 0.76 0.33 25.78 8.38 10.13 10.03 1.57 6.10 NOM 4.58 1.27 2.67 0.89 0.49 26.04 8.64 10.26 10.29 1.70 6.35 INCH MAX 4.70 1.32 MIN 0.175 0.048 1.02 0.64 26.29 8.89 10.39 10.54 1.83 6.60 0.030 0.013 1.015 0.330 0.399 0.395 0.062 0.240 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 NOM 0.180 0.050 0.105 0.035 0.019 1.025 0.340 0.404 0.405 0.067 0.250 MAX 0.185 0.052 0.040 0.025 1.035 0.350 0.409 0.415 0.072 0.260 9 SYMBOL L L2 L3 Φp Φp1 Q MM MIN 13.34 3.78 1.07 2.54 θ1 θ2 θ3 DEP 0.10 NOM 13.72 10.77REF 3.40REF 3.84 1.20 2.80 7° 3° 3° 0.18 INCH MAX 14.10 MIN 0.525 3.89 1.32 3.05 0.149 0.042 0.100 0.25 0.004 NOM 0.540 0.424REF 0.134REF 0.151 0.047 0.110 7° 3° 3° 0.007 MAX 0.555 0.153 0.052 0.120 0.010 www.ruichips.com RU60C20R5 Customer Service C t S i Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] @ p Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 10 www.ruichips.com