mic21641.69 MB

MIC2164/-2/-3/C
Synchronous Buck Controllers featuring
Adaptive On-Time Control 28V Input,
Constant Frequency
Hyper Speed Control™ Family
General Description
The Micrel MIC2164/-2/-3/C are constant-frequency,
synchronous buck controllers featuring adaptive on-time
control. The MIC2164/-2/-3/C are the first products in the
new Hyper Speed Control™ family of buck controllers
introduced by Micrel.
The MIC2164/-2/-3/C controllers operate over an input
supply range of 3V to 28V, and are independent of the IC
supply voltage. The devices are capable of supplying 25A
output current. While the MIC2164 operates at 300kHz,
the MIC2164-2 operates at 600kHz, and the MIC2164-3
operates at 1MHz.
A unique Hyper Speed Control architecture allows for
ultra-fast transient response while reducing the output
capacitance and also makes High VIN/Low VOUT
operation possible. The MIC2164/-2/-3/C controllers
utilizes an architecture which is adaptive TON ripple
controlled. A UVLO feature is provided to ensure proper
operation under power-sag conditions to prevent the
external power MOSFET from overheating. A soft start
feature is provided to reduce the inrush current. Foldback
current limit and “hiccup” mode short-circuit protection
ensure FET and load protection.
The MIC2164/-2/-3/C controllers are available in a 10-pin
MSOP (MAX1954A-compatible) package with a junction
operating range from –40°C to +125°C.
Datasheets and support documentation are available on
Micrel’s web site at: www.micrel.com.
Hyper Speed Control™
Features
 Hyper Speed Control architecture enables high delta V
operation (VHSD = 28V and VOUT = 0.8V) and smaller
output capacitors than competitors
 3V to 28V input voltage
 Any Capacitor™ stable (Zero ESR to high ESR)
 25A output current capability
 300kHz/600kHz/1MHz switching frequency
 Adaptive on-time mode control
 Adjustable output from 0.8V to 5.5V with ±1%
(MIC2164/-2/-3) or ±3% (MIC2164C) FB accuracy
 Up to 95% efficiency
 Foldback current-limit, “hiccup” mode short-circuit
protection, thermal shutdown, and safe pre-bias startup
 6ms Internal soft start
 –40°C to +125°C junction temperature range
 Available in 10-pin MSOP package
Applications
 Set-top box, gateways and routers
 Printers, scanners, graphic cards and video cards
 Telecommunication, PCs and servers
Typical Application
MIC2164
12V to 3.3V Efficiency
100
95
EFFICIENCY (%)
90
85
80
75
70
65
60
55
VIN=5V
50
MIC2164/-2/-3/C Synchronous Controllers Featuring Adaptive On-Time
Control
0
4
8
12
16
20
OUTPUT CURRENT (A)
Hyper Speed Control and Any Capacitor are trademarks of Micrel, Inc.
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
February 12, 2015
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Ordering Information
Part Number
Voltage(1)
Switching
Frequency
Accuracy
Junction Temperature Range
Package
Lead Finish
MIC2164YMM
Adjustable
300kHz
±1%
–40° to +125°C
10-pin MSOP
Pb-Free
MIC2164-2YMM
Adjustable
600kHz
±1%
–40° to +125°C
10-pin MSOP
Pb-Free
MIC2164-3YMM
Adjustable
1MHz
±1%
–40° to +125°C
10-pin MSOP
Pb-Free
MIC2164CYMM
Adjustable
270kHz
±3%
–40° to +125°C
10-pin MSOP
Pb-Free
Note:
1. Other voltages are available. Contact Micrel for details.
Pin Configuration
10-Pin MSOP (MM)
Pin Description
Pin Number
Pin Name
1
HSD
High-Side N-MOSFET Drain Connection (input): Power to the drain of the external high-side N-channel
MOSFET. The HSD operating voltage range is from 3V to 28V. Input capacitors between HSD and the
power ground (PGND) are required.
2
EN
Enable (input): A logic level control of the output. The EN pin is CMOS-compatible. Logic high or
floating = enable, logic low = shutdown. In the off state, supply current of the device is greatly reduced
(typically 0.8mA).
3
FB
Feedback (input): Input to the transconductance amplifier of the control loop. The FB pin is regulated to
0.8V. A resistor divider connecting the feedback to the output is used to adjust the desired output
voltage.
4
GND
5
IN
Input Voltage (input): Power to the internal reference and control sections of the MIC2164/-2/-3. The IN
operating voltage range is from 3V to 5.5V. A 1µF and 0.1µF ceramic capacitors from IN to GND are
recommended for clean operation.
6
DL
Low-Side Drive (output): High-current driver output for external low-side MOSFET. The DL driving
voltage swings from ground-to-IN.
7
8
February 12, 2015
PGND
DH
Pin Function
Signal ground. GND is the ground path for the device input voltage VIN and the control circuitry. The
loop for the signal ground should be separate from the power ground (PGND) loop.
Power Ground. PGND is the ground path for the MIC2164/-2/-3 buck converter power stage. The
PGND pin connects to the sources of low-side N-Channel MOSFETs, the negative terminals of input
capacitors, and the negative terminals of output capacitors. The loop for the power ground should be as
small as possible and separate from the Signal ground (GND) loop.
High-Side Drive (output): High-current driver output for external high-side MOSFET. The DH driving
voltage is floating on the switch node voltage (LX). It swings from ground to VIN minus the diode drop.
Adding a small resistor between DH pin and the gate of the high-side N-channel MOSFETs can slow
down the turn-on and turn-off time of the MOSFETs.
2
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Pin Description (Continued)
Pin
Number
Pin Name
9
10
February 12, 2015
LX
BST
Pin Function
Switch Node and Current Sense input: High current output driver return. The LX pin connects directly to
the switch node. Due to the high speed switching on this pin, the LX pin should be routed away from
sensitive nodes. LX pin also senses the current by monitoring the voltage across the low-side MOSFET
during OFF time. In order to sense the current accurately, connect the low-side MOSFET drain to LX
using a Kelvin connection.
Boost (output): Bootstrapped voltage to the high-side N-channel MOSFET driver. A Schottky diode is
connected between the IN pin and the BST pin. A boost capacitor of 0.1μF is connected between the
BST pin and the LX pin. Adding a small resistor in series with the boost capacitor can slow down the
turn-on time of high-side N-Channel MOSFETs.
3
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Absolute Maximum Ratings(2)
Operating Ratings(3)
IN, FB, EN to GND .......................................... –0.3V to +6V
BST to LX ........................................................ –0.3V to +6V
BST to GND .................................................. –0.3V to +37V
DH to LX ............................................ –0.3V to (VBST + 0.3V)
DL, COMP to GND .............................. –0.3V to (VIN + 0.3V)
HSD to GND .................................................... –0.3V to 31V
PGND to GND .............................................. –0.3V to +0.3V
Junction Temperature .............................................. +150°C
Storage Temperature (TS) ......................... –65°C to +150°C
Lead Temperature (soldering, 10sec) ........................ 260°C
Input Voltage (VIN) ............................................ 3.0V to 5.5V
Supply Voltage (VHSD) ....................................... 3.0V to 28V
Operating Temperature Range ................. –40°C to +125°C
Junction Temperature (TJ) ........................ –40°C to +125°C
Junction Thermal Resistance
MSOP (θJA) ......................................................... 130.5°C/W
Continuous Power Dissipation (TA = 70°C).............. 421mW
(derate 5.6mW/°C above 70°C)
Electrical Characteristics(5)
VBST – VLX = 5V; TA = 25°C, bold values indicate –40°C≤ TA ≤ +125°C, unless noted.
Parameter
Condition
Min.
Typ.
Max.
Units
General
Operating Input Voltage (VIN)(6)
3.0
5.5
V
HSD Voltage Range (VHSD)
3.0
28
V
Quiescent Supply Current
(VFB = 1.5V, output switching but excluding external
MOSFET gate current)
1.4
3.0
mA
Standby Supply Current(7)
VIN = VBST = 5.5V, VHSD = 28, LX = unconnected,
EN = GND
0.8
2
mA
2.7
3
V
2.4
Under-Voltage Lockout Trip Level
UVLO Hysteresis
50
mV
DC-DC Controller
Output-Voltage Adjust Range
(VOUT)
0.8
5.5
0°C ≤ TJ ≤ 85°C
-1
1
−40°C ≤ TJ ≤ 125°C
-2
2
TJ = 25°C (MIC2164C)
-3
3
V
Error Amplifier
FB Regulation Voltage
FB Input Leakage Current
Current-Limit Threshold
5
500
VFB = 0.8V
103
130
162
VFB = 0V
19
48
77
VFB = 0.8V (MIC2164C)
95
130
170
VFB = 0V (MIC2164C)
15
48
80
%
nA
mV
Notes:
2. Exceeding the absolute maximum ratings may damage the device.
3. The device is not guaranteed to function outside its operating ratings.
4. Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5kΩ in series with 100pF.
5. Specification for packaged product only.
6. The application is fully functional at low IN (supply of the control section) if the external MOSFETs have enough low voltage VTH.
7. The current will come only from the internal 100kΩ pull-up resistor sitting on the EN Input and tied to IN.
8. Measured in test mode.
9. Measured at DH. The maximum duty cycle is limited by the fixed mandatory off time TOFF of 363ns typical.
February 12, 2015
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Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Electrical Characteristics(5) (Continued)
VBST – VLX = 5V; TA = 25°C, bold values indicate –40°C≤ TA ≤ +125°C, unless noted.
Parameter
Condition
Min.
Typ.
Max.
Units
Soft-Start
Soft-Start Period
6
ms
Oscillator
Switching Frequency(8)
0.202
0.225
0.45
0.75
MIC2164C
MIC2164
MIC2164-2
MIC2164-3
0.27
0.3
0.6
1
0.338
0.375
0.75
1.25
MHz
Maximum Duty Cycle
MIC2164/ MIC2164C
MIC2164-2
MIC2164-3
87
74
66
%
Minimum Duty Cycle
Measured at DH, VFB = 1V
0
%
(9)
FET Drives
DH, DL Output Low Voltage
ISINK = 10mA
DH, DL Output High Voltage
ISOURCE = 10mA
0.1
VIN − 0.1V
or
VBST − 0.1V
V
V
DH On-Resistance, High State
2.1
3.3
Ω
DH On-Resistance, Low State
1.8
3.3
Ω
DL On-Resistance, High State
1.8
3.3
Ω
DL On-Resistance, Low State
1.2
2.3
Ω
LX Leakage Current
VLX = 28V, VIN = 5.5V,VBST = 33.5V
50
µA
HSD Leakage Current
VLX = 28V, VIN = 5.5V,VBST = 33.5V
20
µA
Thermal Protection
Over-Temperature Shutdown
155
°C
Over-Temperature Shutdown
Hysteresis
10
°C
0.8
V
Shutdown Control
EN Logic Level Low
3V < VIN <5.5V
EN Logic Level High
3V < VIN <5.5V
0.4
0.9
EN Pull-Up Current
February 12, 2015
50
5
1.2
V
µA
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Typical Characteristics
100
100
95
95
95
90
90
90
85
80
75
70
EFFICIENCY (%)
100
85
80
75
70
65
65
60
60
VIN=5V
55
80
75
70
65
60
VIN=5V
4
8
12
16
20
50
0
4
8
OUTPUT CURRENT (A)
12
16
0
20
95
90
90
90
75
70
EFFICIENCY (%)
100
95
EFFICIENCY (%)
100
95
80
85
80
75
70
80
75
70
65
60
VIN=5V
55
60
VIN=5V
50
3
6
9
12
15
50
0
2
4
OUTPUT CURRENT (A)
6
8
0
10
Feedback Voltage
vs. Input Voltage
0.84
0.81
0.80
0.79
0.78
VHSD=12V
VIN=5V
0.76
FEEDBACK VOLTAGE (V)
0.85
0.84
FEEDBACK VOLTAGE (V)
0.85
0.82
0.83
0.82
0.81
0.80
0.79
0.78
0.77
VHSD=12V
0.75
4
8
12
16
3.5
Feedback Voltage
vs. Temperature
0.80
0.79
0.78
4
4.5
5
5.5
3
0.804
0.802
0.800
0.798
0.796
0.794
VIN=5V
0.792
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
100
120
18
23
28
MIC2164-2
Switching Frequency vs. Load
700
340
330
320
310
300
290
280
VHSD=12V
VIN=5V
270
680
660
640
620
600
580
560
540
VHSD=12V
VIN=5V
520
250
500
0
4
8
12
OUTPUT CURRENT (A)
February 12, 2015
13
MIC2164
Switching Frequency vs. Load
260
0.790
8
HSD VOLTAGE (V)
SWITCHING FREQUENCY (kHz)
SWITCHING FREQUENCY (kHz)
0.806
VIN=5V
0.77
350
0.808
FEEDBACK VOLTAGE (V)
0.81
INPUT VOLTAGE (V)
OUTPUT CURRENT (A)
0.810
0.82
0.75
3
20
0.83
0.76
0.76
0.75
10
Feedback Voltage
vs. HSD Voltage
0.84
0.83
8
6
OUTPUT CURRENT (A)
0.85
0
4
2
OUTPUT CURRENT (A)
Feedback Voltage vs. Load
0.77
VIN=5V
55
55
50
15
85
65
65
12
MIC2164-3
12V to 3.3V Efficiency
MIC2164-3
12V to 1.5V Efficiency
85
9
OUTPUT CURRENT (A)
100
0
6
3
OUTPUT CURRENT (A)
MIC2164-2
12V to 3.3V Efficiency
60
VIN=5V
55
50
0
EFFICIENCY (%)
85
55
50
FEEDBACK VOLTAGE (V)
MIC2164-2
12V to 1.5V Efficiency
MIC2164
12V to 3.3V Efficiency
EFFICIENCY (%)
EFFICIENCY (%)
MIC2164
12V to 1.5V Efficiency
6
16
20
0
3
6
9
12
15
OUTPUT CURRENT (A)
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Typical Characteristics (Continued)
MIC2164-3
Switching Frequency vs. Load
MIC2164
Switching Frequency vs. VIN
1120
1090
1060
1030
1000
970
940
VHSD=12V
VIN=5V
910
880
700
SWITCHING FREQUENCY (kHz)
350
SWITCHING FREQUENCY (kHz)
SWITCHING FREQUENCY (kHz)
1150
MIC2164-2
Switching Frequency vs. VIN
340
330
320
310
300
290
280
VHSD=12V
270
260
850
2
4
6
8
10
3.5
4
4.5
5
1030
1000
970
VHSD=12V
910
880
330
VIN=5V
320
310
300
290
280
270
260
5
3
5.5
8
13
23
VIN=5V
1030
1000
970
940
910
880
620
600
580
560
540
520
3
28
330
320
310
300
290
280
270
VIN=5V
640
620
600
580
560
540
VIN=5V
500
-40
-20
0
20
40
60
80
100
120
-40
135
1000
970
940
VIN=5V
120
105
90
75
60
45
30
880
15
850
0
20
40
60
80
TEMPERATURE (°C)
February 12, 2015
100
120
CURRENT LIMIT THRESHOLD
(mV)
150
135
CURRENT LIMIT THRESHOLD
(mV)
150
0
0
20
40
60
80
100
120
Current Limit Threshold
vs. Temperature
1120
-20
-20
TEMPERATURE (°C)
1150
1030
28
660
Current Limit Threshold vs.
Feedback Voltage Percentage
1060
23
680
TEMPERATURE (°C)
1090
18
520
MIC2164-3 Switching
Frequency vs. Temperature
-40
13
700
340
HSD VOLTAGE (V)
910
8
MIC2164-2 Switching
Frequency vs. Temperature
250
23
VIN=5V
VOUT=2.5V
640
HSD VOLTAGE (V)
260
18
5.5
500
28
SWITCHING FREQUENCY (kHz)
SWITCHING FREQUENCY (kHz)
SWITCHING FREQUENCY (kHz)
1090
850
SWITCHING FREQUENCY (kHz)
18
350
1120
5
660
MIC2164 Switching Frequency
vs. Temperature
1150
4.5
680
HSD VOLTAGE (V)
MIC2164-3
Switching Frequency vs. VHSD
13
4
700
340
INPUT VOLTAGE (V)
8
3.5
MIC2164-2
Switching Frequency vs. VHSD
250
850
3
VHSD=12V
540
INPUT VOLTAGE (V)
SWITCHING FREQUENCY (kHz)
SWITCHING FREQUENCY (kHz)
SWITCHING FREQUENCY (kHz)
1060
1060
560
3
350
1090
4.5
580
MIC2164
Switching Frequency vs. VHSD
1120
4
600
5.5
1150
3.5
620
INPUT VOLTAGE (V)
MIC2164-3
Switching Frequency vs. VIN
3
640
500
3
OUTPUT CURRENT (A)
940
660
520
250
0
680
VIN=5V
120
105
90
VFB=0.8V
75
VFB=0V
60
45
30
15
0
0
10
20
30
40
50
60
70
80
90
Feedback Voltage Percentage (%)
7
100
-40
-20
0
20
40
60
80
100
120
TEMPERATURE (°C)
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Typical Characteristics (Continued)
Quiescent Supply Current
vs. Input Voltage
2
QUIESCENT SUPPLY
CURRENT (mA)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
3
3.5
4
4.5
5
5.5
INPUT VOLTAGE (V)
February 12, 2015
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Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Functional Characteristics
February 12, 2015
9
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Functional Diagram (Continued)
February 12, 2015
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Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Functional Characteristics (Continued)
February 12, 2015
11
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Functional Diagram
Figure 1. MIC2164/-2/-3 Block Diagram
February 12, 2015
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Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Functional Description
The MIC2164/-2/-3 are parts of an adaptive on-time
synchronous buck controller family built for low cost and
high performance. They are designed for a wide input
voltage range, from 3V to 28V, and high output power
buck converters. An estimated-ON-time method is
applied to the MIC2164/-2/-3 to obtain a constant
switching frequency and to simplify the control
compensation.
The
over-current
protection
is
implemented without the use of an external sense
resistor. It includes an internal soft-start function which
reduces the power supply input surge current at start-up
by controlling the output voltage rise time.
The maximum duty cycle is obtained from the 363ns
TOFF(min):
Dmax =
VOUT
VHSD × f sw
= 1−
363ns
TS
Eq.2
It is not recommended to use MIC2164/-2/-3 with an OFF
time close to TOFF(min) at the steady state. Also, as VOUT
increases, the internal ripple injection will increase and
reduce the line regulation performance. Therefore, the
maximum output voltage of the MIC2164/-2/-3 should be
limited to 5.5V. If a higher output voltage is required, use
the MIC2176 instead. Please refer to “Setting Output
Voltage” subsection in Application Information for more
details.
The estimated-ON-time method results in a constant
switching frequency in MIC2164/-2/-3. The actual ON
time is varied with the different rising and falling time of
the external MOSFETs. Therefore, the type of the
external MOSFETs, the output load current, and the
control circuitry power supply VIN will modify the actual
ON time and the switching frequency. Also, the minimum
TON results in a lower switching frequency in the high
VHSD and low VOUT applications, such as 24V to 1.0V
MIC2164-3 application. The minimum TON measured on
the MIC2164 evaluation board is about 138ns. During the
load transient, the switching frequency is changed due to
the varying OFF time.
Eq. 1
where VOUT is the output voltage, VHSD is the power stage
input voltage, and fSW is the switching frequency (300kHz
for MIC2164, 600kHz for MIC2164-2, and 1MHz for
MIC2164-3).
To illustrate the control loop, the steady-state scenario
and the load transient scenario are analyzed. For easy
analysis, the gain of the gm amplifier is assumed to be 1.
With this assumption, the inverting input of the error
comparator is the same as the FB voltage. Figure 2
shows the MIC2164/-2/-3 control loop timing during the
steady-state. During the steady-state, the gm amplifier
senses the FB voltage ripple, which is proportional to the
output voltage ripple and the inductor current ripple, to
trigger the ON-time period. The ON time is predetermined
by the estimation. The ending of OFF time is controlled
by the FB voltage. At the valley of the FB voltage ripple,
which is below than VREF, OFF period ends and the next
ON-time period is triggered through the control logic
circuitry.
When the MIC2164/-2/-3 enters the OFF-time period, the
DH pin becomes logic low and the DL pin is logic high. In
most cases, the OFF-time period length is dependent on
the FB voltage. When the FB voltage decreases and the
output voltage of the gm amplifier drops below 0.8V, the
ON-time period is triggered and the OFF-time period
ends. If the OFF-time period, determined by the FB
voltage, is less than the minimum OFF time (TOFF(min)),
which is about 363ns typical, then the MIC2164/-2/-3
control logic will apply the TOFF(min) instead. TOFF(min) is
required by the BST charging.
February 12, 2015
TS
where TS = 1/fSW.
Theory of Operation
Figure 1 illustrates the block diagram for the control loop.
The output voltage variation will be sensed by the
MIC2164/-2/-3 feedback pin FB via the voltage divider R1
and R2, and compared to a 0.8V reference voltage VREF
at the error comparator through a low gain
transconductance (gm) amplifier, the amplifier improves
the MIC2164/-2/-3 converter output voltage regulation. If
the FB voltage decreases and the output of the gm
amplifier is below 0.8V, The error comparator will trigger
the control logic and generate an ON-time period, in
which DH pin is logic high and DL pin is logic low. The
ON-time period length is predetermined by the “FIXED
TON ESTIMATION” circuitry:
TON(estimated) =
TS − TOFF(min)
13
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Micrel, Inc.
MIC2164/-2/-3/C
The MIC2164/-2/-3 family has its own stability concern.
the FB voltage ripple should be in phase with the inductor
current ripple and large enough to be sensed by the gm
amplifier and the error comparator. The recommended
minimum FB voltage ripple is 20mV. If a low ESR output
capacitor is selected, then the FB voltage ripple may be
too small to be sensed by the gm amplifier and the error
comparator. Also, the output voltage ripple and the FB
voltage ripple are not in phase with the inductor current
ripple if the ESR of the output capacitor is very low.
Therefore, the ripple injection is required for a low ESR
output capacitor. Please refer to “Ripple Injection”
subsection in “Application Information” for more details
about the ripple injection.
Soft-Start
Soft-start reduces the power supply input surge current at
startup by controlling the output voltage rise time. The
input surge appears while the output capacitor is charged
up. A slower output rise time will draw a lower input surge
current.
Figure 2. MIC2164/-2/-3 Control Loop Timing
Figure 3 shows the load transient scenario of the
MIC2164/-2/-3 converter. The output voltage will drop
due to a sudden load increase, which causes the FB
voltage to be less than VREF. This will cause the error
comparator to the trigger ON-time period. At the end of
the ON-time period a minimum OFF time, TOFF(min), is
generated to charge the BST since the FB voltage is still
below the VREF. The next ON-time period is triggered due
to the low FB voltage. The switching frequency changes
during the load transient. With the varying duty cycle and
switching frequency, the output recovery time is fast and
the output voltage deviation is small in the MIC2164/-2/-3
converter.
MIC2164/-2/-3 implements an internal digital soft-start by
making the 0.8V reference voltage VREF ramp from 0 to
100% in about 6ms with a 9.7mV step. The output
voltage is controlled to increase slowly by a stair-case
VREF ramp. Once the soft-start ends, the related circuitry
is disabled to reduce the current consumption. To make
the soft-start function behavior correctly, the VIN should
not be powered up before VHSD.
Current Limit
The MIC2164/-2/-3 uses the RDS(ON) of the low-side power
MOSFET to sense over-current conditions. The lowerside MOSFET is used because it displays much lower
parasitic oscillations during switching then the high-side
MOSFET. Using the low-side MOSFET RDS(ON) as a
current sense is an excellent method for circuit
protection. This method will avoid adding cost, board
space and power losses taken by discrete current sense
resistors.
In each switching cycle of the MIC2164/-2/-3 converter,
the inductor current is sensed by monitoring the low-side
MOSFET in the OFF period. The sensed voltage is
compared with a current-limit threshold voltage VCL after
a blanking time of 150ns. If the sensed voltage is over
VCL, which is 130mV typical at 0.8V feedback voltage, the
MIC2164/-2/-3 turns off the high-side MOSFET and a
soft-start sequence is trigged. This mode of operation is
called the “hiccup mode” and its purpose is to protect the
downstream load in case of a hard short. The current limit
threshold VCL has a fold back characteristics related to
the FB voltage. Please refer to the Typical Characteristics
for the curve of VCL vs. FB voltage. The circuit in Figure 4
illustrates the MIC2164/-2/-3 current limiting circuit.
Figure 3. MIC2164/-2/-3 Load-Transient Response
Unlike the current-mode control, MIC2164/-2/-3 uses the
output voltage ripple, which is proportional to the inductor
current ripple if the ESR of the output capacitor is large
enough, to trigger an ON-time period. The predetermined
ON time makes the MIC2164/-2/-3 control loop have an
advantage as the adaptive on-time mode control. The
slope compensation, which is necessary for the currentmode control, is not required in the MIC2164/-2/-3 family.
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MOSFET Gate Drive
The MIC2164/-2/-3 high-side drive circuit is designed to
switch an N-Channel MOSFET. Figure 1 shows a
bootstrap circuit, consisting of D1 (a Schottky diode is
recommended) and CBST. This circuit supplies energy to
the high-side drive circuit. The CBST capacitor is charged
while the low-side MOSFET is on and the voltage on the
LX pin is approximately 0V. When the high-side MOSFET
driver is turned on, energy from CBST is used to turn the
MOSFET on. As the high-side MOSFET turns on, the
voltage on the LX pin increases to approximately VHSD.
Diode D1 is reversed biased and the CBST floats high
while continuing to keep the high-side MOSFET on. The
bias current of the high-side driver is less than 10mA so a
0.1μF to 1μF capacitor is sufficient to hold the gate
voltage with minimal droop for the power stroke, highside switching cycle, (i.e. ΔBST = 10mA x 3.33μs/0.1μF =
333mV) for MIC2164. When the low-side MOSFET is
turned back on, CBST is recharged through D1. A small
resistor (RG), which is in series with CBST, can slow down
the turn-on time of the high-side N-channel MOSFET.
Figure 4 MIC2164/-2/-3 Current Limiting Circuit
Using the typical VCL value of 130mV, the current limit
value is roughly estimated as:
ICL ≈
130mV
R DS(ON)
Eq. 3
The drive voltage is derived from the supply voltage (VIN).
The nominal low-side gate drive voltage is VIN and the
nominal high-side gate drive voltage is approximately
VIN – VDIODE, where VDIODE is the voltage drop across D1.
There is a delay for approximately 30ns between the
high-side and low-side driver transitions, which used to
prevent current from simultaneously flowing unimpeded
through both MOSFETs.
For designs where the current ripple is significant
compared to the load current (IOUT), or for low duty cycle
operation, calculating the current limit (ICL) should take
into account that one is sensing the peak inductor current
and that there is a blanking delay of approximately
150ns.
ICL =
V
* TDLY ΔIL(pp)
130mV
+ OUT
−
R DS(ON)
L
2
ΔIL(pp) =
VOUT ⋅ (1 − D)
f SW ⋅L
Eq. 4
Eq. 5
where
VOUT = The output voltage
TDLY = Current limit blanking time, 150ns typical
ΔIL(pp) = Inductor current ripple peak-to-peak value
D = Duty Cycle
fSW = Switching frequency
The MOSFET RDS(ON) varies 30 to 40% with temperature;
therefore, it is recommended to add a 50% margin to ICL
in the above equation to avoid false current limiting due
to increased MOSFET junction temperature rise. It is also
recommended to connect LX pin directly to the drain of
the low-side MOSFET to accurately sense the MOSFETs
RDS(ON).
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The low-side MOSFET is turned on and off at VDS = 0
because an internal body diode or external freewheeling
diode is conducting during this time. The switching loss
for the low-side MOSFET is usually negligible. Also, the
gate-drive current for the low-side MOSFET is more
accurately calculated using CISS at VDS = 0 instead of
gate charge.
Application Information
MOSFET Selection
The MIC2164/-2/-3 controller operates between power
stage input voltages of 3V to 28V, and has an external 3V
to 5.5V VIN to turn the external N-Channel which powers
the MOSFETs for the high- and low-side switches. For
applications where VIN < 5V, it is necessary that the
power MOSFETs used are sub-logic level and are in full
conduction mode for a 2.5V VGS. For applications where
VIN > 5V, the logic-level MOSFETs with a VGS of 4.5V
must be used.
For the low-side MOSFET:
IG[low -side] (avg) = C ISS × VGS × f SW
Since the current from the gate drive comes from the
VIN, the power dissipated in the MIC2164/-2/-3 due to
gate drive is:
There are different criteria for choosing the high-side and
low-side MOSFETs. These differences are more
significant at lower duty cycles such as 12V to 1.8V
conversion. In such an application, the high-side
MOSFET is required to switch as quickly as possible to
minimize transition losses, whereas the low-side
MOSFET can switch slower, but must handle larger RMS
currents. When the duty cycle approaches 50%, the
current carrying capability of the high-side MOSFET
starts to become critical.
PGATEDRIVE = VIN .(IG[high-side] (avg) + IG[low -side] (avg))
Eq. 8
A convenient figure of merit for switching MOSFETs is
the on resistance times the total gate charge RDS(ON) ×
QG. Lower numbers translate into higher efficiency. Low
gate-charge logic-level MOSFETs are a good choice for
use with the MIC2164/-2/-3. Also, the RDS(ON) of the lowside MOSFET will determine the current limit value.
Please refer to “Current Limit” subsection is “Functional
Description” for more details.
It is important to note that the on-resistance of a
MOSFET increases with increasing temperature. A 75°C
rise in junction temperature will increase the channel
resistance of the MOSFET by 50% to 75% of the
resistance specified at 25°C. This change in resistance
must be accounted for when calculating MOSFET power
dissipation and in calculating the value of current limit.
Total gate charge is the charge required to turn the
MOSFET on and off under specified operating conditions
(VDS and VGS). The gate charge is supplied by the
MIC2164/-2/-3 gate-drive circuit. At 300kHz switching
frequency and above, the gate charge can be a
significant source of power dissipation in the MIC2164/2/-3. At low output load, this power dissipation is
noticeable as a reduction in efficiency. The average
current required to drive the high-side MOSFET is:
IG[high-side] (avg) = Q G × fSW
Eq. 7
Parameters that are important to MOSFET switch
selection are:
•
Voltage rating
•
On-resistance
•
Total gate charge
The voltage ratings for the high-side and low-side
MOSFETs are essentially equal to the power stage input
voltage VHSD. A safety factor of 20% should be added to
the VDS(max) of the MOSFETs to account for voltage
spikes due to circuit parasitic elements.
Eq. 6
The power dissipated in the MOSFETs is the sum of the
conduction losses during the on-time (PCONDUCTION) and
the switching losses during the period of time when the
MOSFETs turn on and off (PAC).
where:
IG[high-side](avg) = Average high-side MOSFET gate current
PSW = PCONDUCTION + PAC
QG = Total gate charge for the high-side MOSFET taken
from the manufacturer’s data sheet for VGS = VIN.
Eq. 9
2
fSW = Switching Frequency
PCONDUCTION = ISW(RMS) * R DS(ON)
Eq. 10
PAC = PAC(off ) + PAC(on)
Eq. 11
where:
RDS(ON) = on-resistance of the MOSFET switch
D = Duty Cycle = VOUT / VHSD
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Making the assumption that the turn-on and turn-off
transition times are equal; the transition times can be
approximated by:
tT =
The peak-to-peak inductor current ripple is:
DIL(PP ) =
C ISS × VIN + C OSS × VHSD
IG
VOUT × ( VHSD(max) − VOUT )
VHSD(max) × f SW × L
Eq. 15
Eq. 12
The peak inductor current is equal to the average output
current plus one half of the peak-to-peak inductor current
ripple.
where:
CISS and COSS are measured at VDS = 0
IL(PK) = IOUT(max) + 0.5 × ∆IL(PP)
Eq. 16
IG = gate-drive current
The total high-side MOSFET switching loss is:
PAC = (VHSD + VD ) × IPK × t T × f SW
The RMS inductor current is used to calculate the I2R
losses in the inductor.
Eq. 13
IL(RMS) = IOUT(max) 2 +
where:
tT = Switching transition time
VD = Body diode drop (0.5V)
The high-side MOSFET switching losses increase with
the switching frequency and the input voltage VHSD. The
low-side MOSFET switching losses are negligible and
can be ignored for these calculations.
(
)
VHSD(max) × f SW × 20% × IOUT(max)
2
PINDUCTORCu=IL(RMS) × RWINDING
Eq. 18
The resistance of the copper wire, RWINDING, increases
with the temperature. The value of the winding resistance
used should be at the operating temperature.
Eq. 14
RWINDING = RWINDING(20°C`) × (1 + 0.0042 × (TH – T20°C))
Eq. 19
where:
where:
TH = temperature of wire under full load
T20°C = ambient temperature
RWINDING(20°C) = room temperature winding resistance
(usually specified by the manufacturer)
fSW = switching frequency
20% = ratio of AC ripple current to DC output current
VHSD(max) = maximum power stage input voltage
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Eq. 17
Low-cost iron powder cores may be used, but the
increase in core loss will reduce the efficiency of the
power supply. This is especially noticeable at low output
power. The winding resistance decreases efficiency at
the higher output current levels. The winding resistance
must be minimized even at the expense of a larger
inductor. The power dissipated in the inductor is equal to
the sum of the core and copper losses. At higher output
loads, the core losses are usually insignificant and can be
ignored. At lower output currents, the core losses can be
a significant contributor. Core loss information is usually
available from the magnetics vendor. Copper loss in the
inductor is calculated by the equation below:
Inductor Selection
Values for inductance, peak, and RMS currents are
required to select the output inductor. The input and
output voltages and the inductance value determine the
peak-to-peak inductor ripple current. Generally, higher
inductance values are used with higher input voltages.
Larger peak-to-peak ripple currents will increase the
power dissipation in the inductor and MOSFETs. Larger
output ripple currents will also require more output
capacitance to smooth out the larger ripple current.
Smaller peak-to-peak ripple currents require a larger
inductance value and therefore a larger and more
expensive inductor. A good compromise between size,
loss and cost is to set the inductor ripple current to be
equal to 20% of the maximum output current. The
inductance value is calculated by the equation below:
VOUT × VHSD(max) − VOUT
12
Maximizing efficiency requires both the proper selection
of core material and the minimizing of the winding
resistance. The high frequency operation of the
MIC2164/-2/-3 requires the use of ferrite materials for all
but the most cost sensitive applications.
fSW = Switching Frequency
L=
ΔIL(PP)2
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Output Capacitor Selection
The type of the output capacitor is usually determined by
its ESR (equivalent series resistance). Voltage and RMS
current capability are two other important factors for
selecting the output capacitor. Recommended capacitors
are tantalum, low-ESR aluminum electrolytic, OS-CON
and POSCAPS. The output capacitor’s ESR is usually
the main cause of the output ripple. The output capacitor
ESR also affects the control loop from a stability point of
view. The maximum value of ESR is calculated:
ESR COUT ≤
ΔVOUT(pp)
PDISS(COUT) = ICOUT(RMS) 2 × ESR COUT
Input Capacitor Selection
The input capacitor for the power stage input VHSD should
be selected for ripple current rating and voltage rating.
Tantalum input capacitors may fail when subjected to
high inrush currents, caused by turning the input supply
on. A tantalum input capacitor’s voltage rating should be
at least two times the maximum input voltage to
maximize reliability. Aluminum electrolytic, OS-CON, and
multilayer polymer film capacitors can handle the higher
inrush cu
+rrents without voltage de-rating. The input voltage ripple
will primarily depend upon the input capacitor’s ESR. The
peak input current is equal to the peak inductor current,
so:
Eq. 20
ΔIL(PP)
Eq. 23
where:
ΔVOUT(pp) = peak-to-peak output voltage ripple
ΔIL(PP) = peak-to-peak inductor current ripple
∆VIN = IL(PK ) × ESR CIN
The total output ripple is a combination of the ESR and
output capacitance. The total ripple is calculated below:
2
ΔIL(PP)


 + ΔIL(PP) ⋅ ESR COUT
ΔVOUT(pp) = 

C
⋅
f
⋅
8
 OUT SW 
(
)2
Eq. 24
The input capacitor must be rated for the input current
ripple. The RMS value of input capacitor current is
determined at the maximum output current. Assuming the
peak-to-peak inductor current ripple is low:
Eq. 21
where:
D = Duty cycle
COUT = Output capacitance value
fSW = Switching frequency
ICIN(RMS) ≈ IOUT(max) × D × (1 − D)
Eq. 25
The power dissipated in the input capacitor is:
As described in the “Theory of Operation” subsection in
Functional Description, MIC2164/-2/-3 requires at least
20mV peak-to-peak ripple at the FB pin to make the gm
amplifier and the error comparator to behavior properly.
Also, the output voltage ripple should be in phase with
the inductor current. Therefore, the output voltage ripple
caused by the output capacitor COUT should be much
smaller than the ripple caused by the output capacitor
ESR. If low ESR capacitors are selected as the output
capacitors, such as ceramic capacitors, a ripple injection
method is applied to provide the enough FB voltage
ripples. Please refer to the “Ripple Injection” subsection
for more details.
PDISS(CIN) = ICIN(RMS)2×ESRCIN
Eq. 26
The voltage rating of the capacitor should be twice the
output voltage for a tantalum and 20% greater for
aluminum electrolytic or OS-CON. The output capacitor
RMS current is calculated below:
ICOUT(RMS) =
ΔIL(PP)
Eq. 22
12
The power dissipated in the output capacitor is:
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is so small that the gm amplifier and error comparator
could not sense it, then the MIC2164/-2/-3 will lose
control and the output voltage will not be regulated. In
order to have some amount of FB voltage ripple, the
ripple injection method is applied for low output voltage
ripple applications.
External Schottky Diode (Optional)
An external freewheeling diode, which is generally not
necessary, can be used to keep the inductor current flow
continuous while both MOSFETs are turned off. This
dead time prevents current from flowing unimpeded
through both MOSFETs and is typically 30ns. The diode
conducts twice during each switching cycle. Although the
average current through this diode is small, the diode
must be able to handle the peak current.
ID(avg) = IOUT ⋅ 2 ⋅ 30ns ⋅ f SW
The applications are divided into three situations
according to the amount of the FB voltage ripple:
1.
Enough ripple at the FB voltage due to the large
ESR of the output capacitors.
As shown in Figure 5, the converter is stable without any
adding in this situation. The FB voltage ripple is:
Eq. 27
The reverse voltage requirement of the diode is:
ΔVFB(pp) =
R2
⋅ ESR COUT ⋅ ΔIL (pp)
R1 + R2
Eq. 29
VDIODE(rrm) = VHSD
where ΔIL(pp) is the peak-to-peak value of the inductor
current ripple.
The power dissipated by the Schottky diode is:
PDIODE = ID(avg) × VF
2.
Inadequate ripple at the FB voltage due to the
small ESR of the output capacitors.
Eq. 28
The output voltage ripple is fed into the FB pin through a
feedforward capacitor Cff in this situation, as shown in
Figure 6. The typical Cff value is between 1nF to 100nF.
With the feedforward capacitor, the FB voltage ripple is
very close to the output voltage ripple:
where, VF = forward voltage at the peak diode current.
The external Schottky diode is not necessary for the
circuit operation since the low-side MOSFET contains a
parasitic body diode. The external diode will improve
efficiency and decrease the high frequency noise. If the
MOSFET body diode is then used, it must be rated to
handle the peak and average current. The body diode
has a relatively slow reverse recovery time and a
relatively high forward voltage drop. The power lost in the
diode is proportional to the forward voltage drop of the
diode. As the high-side MOSFET starts to turn on, the
body diode becomes a short circuit for the reverse
recovery period, dissipating additional power. The diode
recovery and the circuit inductance will cause ringing
during the high-side MOSFET turn-on.
ΔVFB(pp) ≈ ESR ⋅ ΔIL (pp)
Eq. 30
3. Invisible ripple at the FB voltage is due to the very
low ESR of the output capacitors.
An external Schottky diode conducts at a lower forward
voltage preventing the body diode in the MOSFET from
turning on. The lower forward voltage drop dissipates
less power than the body diode. The lack of a reverse
recovery mechanism in a Schottky diode causes less
ringing and less power loss. Depending upon the circuit
components and operating conditions, an external
Schottky diode will give a ½ to 1% improvement in
efficiency.
Ripple Injection
The minimum FB voltage ripple requested by the
MIC2164/-2/-3 gm amplifier and error comparator is
20mV (100mV maximum). However, the output voltage
ripple is generally designed as 1% to 2% of the output
voltage. For a low output voltage, such as 1V output, the
output voltage ripple is only 10mV to 20mV, and the FB
voltage ripple is less than 20mV. If the FB voltage ripple
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In the formula (29) and (30), it is assumed that the time
constant associated with Cff must be much greater than
the switching period:
1
T
= << 1
fsw × τ τ
If the voltage divider resistors R1 and R2 are in the kΩ
range, a Cff of 1nF to 100nF can easily satisfy the large
time constant consumption. Also, a 100nF injection
capacitor Cinj is used in order to be considered as short
for a wide range of the frequencies.
Figure 5. Enough Ripple at FB
The process of sizing the ripple injection resistor and
capacitors is:
Step 1. Select Cff to feed all output ripples into the
feedback pin and make sure the large time constant
assumption is satisfied. Typical choice of Cff is 1nF to
100nF if R1 and R2 are in kΩ range.
Figure 6. Inadequate Ripple at FB
Step 2. Select Rinj according to the expected feedback
voltage ripple. According to Equation 30:
K div =
In this situation, the output voltage ripple is less than
20mV. Therefore, additional ripple is injected into the FB
pin from the switching node LX via a resistor Rinj and a
capacitor Cinj, as shown in Figure 7. The injected ripple
is:
K div =
VHSD
⋅
f SW ⋅ τ
D ⋅ (1 − D)
Eq. 32
Then the value of Rinj is obtained as:
Figure 7. Invisible Ripple at FB
ΔVFB(pp)
DVFB(pp )
R inj = (R1 // R2) ⋅ (
1
− 1)
K div
Eq. 33
Step 3. Select Cinj as 100nF, which could be considered
as short for a wide range of the frequencies.
1
= VHSD × K div × D × (1- D) ×
f SW × τ
R1//R2
Rinj + R1//R2
(30)
Eq. 31
where
VHSD = Power stage input voltage at HSD pin
D = Duty Cycle
fSW = switching frequency
τ = (R1// R2 // Rinj) ⋅ Cff
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Setting Output Voltage
The MIC2164/-2/-3 requires two resistors to set the
output voltage, as shown in Figure 8:
Figure 9. Internal Ripple Injection
Figure 8. Voltage-Divider Configuration
The output voltage is determined by the equation:
VOUT = VREF × (1 +
R1
)
R2
Eq. 34
where VREF = 0.8V. A typical value of R1 can be between
3kΩ and 10kΩ. If R1 is too large, it may allow noise to be
introduced into the voltage feedback loop. If R1 is too
small, it will decrease the efficiency of the power supply,
especially at light loads. Once R1 is selected, R2 can be
calculated using:
R2 =
VREF × R1
VOUT − VREF
Eq. 35
In addition to the external ripple injection added at the FB
pin, internal ripple injection is added at the inverting input
of the comparator inside the MIC2164/-2/-3, as shown in
Figure 7. The inverting input voltage VINJ is clamped to
1.2V. As VOUT is increased, the swing of VINJ will be
clamped. The clamped VINJ reduces the line regulation
because it is reflected back as a DC error on the FB
terminal. Therefore, the maximum output voltage of the
MIC2164/-2/-3 should be limited to 5.5V to avoid this
problem. If a higher output voltage is required, use the
MIC2176 instead.
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Inductor
PCB Layout Guideline
• Keep the inductor connection to the switch node (LX)
short.
• Do not route any digital lines underneath or close to
the inductor.
• Keep the switch node (LX) away from the feedback
(FB) pin.
• The LX pin should be connected directly to the drain of
the low-side MOSFET to accurate sense the voltage
across the low-side MOSFET.
• To minimize noise, place a ground plane underneath
the inductor.
Warning!!! To minimize EMI and output noise, follow
these layout recommendations.
PCB Layout is critical to achieve reliable, stable and
efficient performance. A ground plane is required to
control EMI and minimize the inductance in power, signal
and return paths.
The following guidelines should be followed to insure
proper operation of the MIC2164/-2/-3 converter.
IC
• Place the IC and MOSFETs close to the point of load
(POL).
• Use fat traces to route the input and output power
lines.
• Signal and power grounds should be kept separate
and connected at only one location.
Output Capacitor
• Use a wide trace to connect the output capacitor
ground terminal to the input capacitor ground terminal.
• Phase margin will change as the output capacitor value
and ESR changes. Contact the factory if the output
capacitor is different from what is shown in the BOM.
• The feedback trace should be separate from the power
trace and connected as close as possible to the output
capacitor. Sensing a long high current load trace can
degrade the DC load regulation.
Input Capacitor
• Place the HSD input capacitor next.
• Place the HSD input capacitors on the same side of
the board and as close to the MOSFETs as possible.
• Keep both the HSD and PGND connections short.
• Place several vias to the ground plane close to the
HSD input capacitor ground terminal.
• Use either X7R or X5R dielectric input capacitors. Do
not use Y5V or Z5U type capacitors.
• Do not replace the ceramic input capacitor with any
other type of capacitor. Any type of capacitor can be
placed in parallel with the input capacitor.
• If a Tantalum input capacitor is placed in parallel with
the input capacitor, it must be recommended for
switching regulator applications and the operating
voltage must be derated by 50%.
• In “Hot-Plug” applications, a Tantalum or Electrolytic
bypass capacitor must be used to limit the over-voltage
spike seen on the input supply with power is suddenly
applied.
• An additional Tantalum or Electrolytic bypass input
capacitor of 22uF or higher is required at the input
power connection.
• The 1µF and 0.1µF capacitors, which connect to the
VIN terminal, must be located right at the IC. The VIN
terminal is very noise sensitive and placement of the
capacitor is very critical. Connections must be made
with wide trace.
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Schottky Diode (Optional)
• Place the Schottky diode on the same side of the
board as the MOSFETs and HSD input capacitor.
• The connection from the Schottky diode’s Anode to the
input capacitors ground terminal must be as short as
possible.
• The diode’s cathode connection to the switch node
(LX) must be keep as short as possible.
RC Snubber
• Place the RC snubber on the same side of the board
and as close to the MOSFETs as possible.
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Evaluation Board Schematic
Schematic of MIC2164 20A Evaluation Board
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Bill of Materials
Item
C1
C2,C3
Part Number
EPCOS
222215095001E3
Vishay(11)
1210YD226KAT2A
AVX(12)
GRM32ER61C226KE20L
06035C104KAT2A
GRM188R71H104KA93D
C1608X7R1H104K
0805ZD105KAT2A
C7
C8
C11
C12
GRM219R61A105KC01D
Murata(13)
Murata
2
0.1µF Ceramic Capacitor, X7R, Size 0603, 50V
5
AVX
Murata
AVX
Murata
C2012X7R1A225K
TDK
06035C102KAT2A
AVX
Murata
C1608X7R1H102K
TDK
06035C223KAZ2A
AVX
GRM188R71H223K
Murata
C1608X7R1H223K
TDK
C13,
C15
C17
16ME1000WG
SANYO(15)
SD103BWS-7
Diodes Inc(16)
SD103BWS
22µF Ceramic Capacitor, X5R, Size 1210, 16V
TDK
12106D107MAT2A
D1
1
AVX
0805ZC225MAT2A
GRM32ER60J107ME20L
220µF Aluminum Capacitor, SMD, 35V
TDK
TDK
GRM188R71H102KA01D
Qty.
(14)
C2012X5R1A105K
GRM21BR71A225KA01L
Description
(10)
B41125A7227M
C3225X5R1C226K
C6,
C9,
C10,
C14,
C16
Manufacturer
AVX
Murata
Vishay
1µF Ceramic Capacitor, X5R, Size 0805, 10V
1
2.2µF Ceramic Capacitor, X7R, Size 0805, 10V
1
1nF Ceramic Capacitor, X7R, Size 0603, 50V
1
22nF Ceramic Capacitor, X7R, Size 0603, 50V
1
100µF Ceramic Capacitor, X5R, Size 1210, 6.3V
2
1000µF Aluminum Capacitor, 16V
1
Small Signal Schottky Diode
1
L1
CDEP147NP-1R5M
Sumida(17)
1.5µH Inductor, 27.2A Saturation Current
1
Q1,
Q4
FDMS7672
Fairchild(18)
30V N-Channel MOSFET 6.9mΩ RDS(ON) @ 4.5V
2
Q2,
Q3
FDS8672S
Fairchild
30V N-Channel MOSFET 7mΩ RDS(ON) @ 4.5V
2
Notes:
10. EPCOS: www.epcos.com.
11. Vishay: www.vishay.com.
12. AVX: www.avx.com.
13. Murata: www.murata.com.
14. TDK: www.tdk.com.
15. Sanyo: www.sanyo.com.
16. Diodes Inc: www.diodes.com.
17. Sumida: www.sumida.com.
18. Fairchild: www.fairchildsemi.com.
February 12, 2015
24
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Bill of Materials (Continued)
Item
Part Number
R1
CRCW06032R21FKEA
Vishay/Dale
2.21Ω Resistor, Size 0603, 1%
1
R2
CRCW06031R21FKEA
Vishay/Dale
1.21Ω Resistor, Size 0603, 1%
1
R3,R4
CRCW060310K0FKEA
Vishay/Dale
10kΩ Resistor, Size 0603, 1%
2
R5
CRCW060320R0FKEA
Vishay/Dale
20Ω Resistor, Size 0603, 1%
1
R6
CRCW06033K24FKEA
Vishay/Dale
3.24kΩ Resistor, Size 0603, 1%
1
U1
(20)
U2
MIC2164YMM
MIC5233-5.0YM5
Manufacturer
(19)
MICREL INC
MICREL INC
Description
Qty.
300kHz Buck Controller
1
LDO
1
Notes:
19. Micrel, Inc.: www.micrel.com.
20. Optional: Required if 5V supply is not available in the system.
February 12, 2015
25
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
PCB Layout Recommendations
MIC2164 20A Evaluation Board Top Layer
MIC2164 20A Evaluation Board Bottom Layer
February 12, 2015
26
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
PCB Layout Recommendations (Continued)
MIC2164 20A Evaluation Board Mid-Layer 1
MIC2164 20A Evaluation Board Mid-Layer 2
February 12, 2015
27
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Application Schematics
MIC2164 12V to 3.3V @ 20A Buck Converter
February 12, 2015
28
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Bill of Materials (MIC2164 12V to 3.3V @ 20A)
Item
Part Number
C1, C8, C17, C19
06035C104KAT
AVX
0.1µF Ceramic Capacitor, X7R, Size 0603, 50V
4
C2
0805ZD225MAT
AVX
2.2µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C3
222215095001
220µF Aluminum Capacitor, SMD, 35V
1
C4, C5, C6
1210YD226MAT
AVX
22µF Ceramic Capacitor, X5R, Size 1210, 16V
3
C9
0805ZD105KAT
AVX
1µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C10
06035C223KAT
AVX
22nF Ceramic Capacitor, X7R, Size 0603, 50V
1
C11
16ME1000WGL
Sanyo
1000µF Aluminum Capacitor, 16V
1
C12
12106D107MAT
AVX
100µF Ceramic Capacitor, X5R, Size 1210, 6.3V
1
C15
06035C102KAT
AVX
1nF Ceramic Capacitor, X7R, Size 0603, 50V
1
D1
SD103BWS
Vishay
Small Signal Schottky Diode
1
L1
CDEP147NP-1R5M
Sumida
1.5µH Inductor, 27.2A Saturation Current
1
Q1, Q4
FDMS7672
Fairchild
30V N-Channel MOSFET 6.9mΩ RDS(ON) @ 4.5V
2
Q2, Q3
FDS8672S
Fairchild
30V N-Channel MOSFET 7mΩ RDS(ON) @ 4.5V
2
R1
CRCW06032R21FKEY3
Vishay Dale
2.21Ω Resistor, Size 0603, 1%
1
R5
CRCW06031R21FKEY3
Vishay Dale
1.21Ω Resistor, Size 0603, 1%
1
R6, R9
CRCW06031002FKEY3
Vishay Dale
10k Resistor, Size 0603, 1%
2
R15
CRCW06033241FKEY3
Vishay Dale
3.24k Resistor, Size 0603 1%
1
U1
MIC2164YMM
Micrel. Inc.
300kHz Buck Controller
1
U2
MIC5233-5.0YM5
Micrel. Inc.
LDO
1
February 12, 2015
Manufacturer
Vishay
Description
29
Qty.
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
MIC2164 12V to 1.8V @ 10A Buck Converter
February 12, 2015
30
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Bill of Materials (MIC2164 12V to 1.8V @ 10A)
Item
Part Number
C1, C8, C17, C19
06035C104KAT
AVX
0.1µF Ceramic Capacitor, X7R, Size 0603, 50V
4
C2
0805ZD225MAT
AVX
2.2µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C3
222215095001
220µF Aluminum Capacitor, SMD, 35V
1
C4, C5
1210YD106MAT
AVX
10µF Ceramic Capacitor, X5R, Size 1210, 16V
2
C9
0805ZD105KAT
AVX
1µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C10
06035C223KAT
AVX
22nF Ceramic Capacitor, X7R, Size 0603, 50V
1
C11
6SEPC560MX
560µF OSCON Capacitor, 6.3V
1
C12
12106D107MAT
AVX
100µF Ceramic Capacitor, X5R, Size 1210, 6.3V
1
C15
06035C102KAT
AVX
1nF Ceramic Capacitor, X7R, Size 0603, 50V
1
D1
SD103BWS
Vishay
Small Signal Schottky Diode
1
L1
CDEP105-2R0MC-32
Sumida
2.0µH Inductor, 15.8A Saturation Current
1
Q1, Q2
FDS7764A
Fairchild
30V N-Channel MOSFET 7.5mΩ RDS(ON) @ 4.5V
2
R1
CRCW06032R21FKEY3
Vishay Dale
2.21Ω Resistor, Size 0603, 1%
1
R5
CRCW06031R21FKEY3
Vishay Dale
1.21Ω Resistor, Size 0603, 1%
1
R6, R9
CRCW06031002FKEY3
Vishay Dale
10k Resistor, Size 0603, 1%
2
R15
CRCW06038061FKEY3
Vishay Dale
8.06k Resistor, Size 0603, 1%
1
U1
MIC2164YMM
Micrel. Inc.
300kHz Buck Controller
1
U2
MIC5233-5.0YM5
Micrel. Inc.
LDO
1
February 12, 2015
Manufacturer
Vishay
Sanyo
31
Description
Qty.
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
MIC2164 12V to 1.0V @ 5A Buck Converter
February 12, 2015
32
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Bill of Materials (MIC2164 12V to 1.0V @ 5A)
Item
Part Number
Manufacturer Description
Qty.
C1, C8, C17, C19 06035C104KAT
AVX
0.1µF Ceramic Capacitor, X7R, Size 0603, 50V
4
C2
0805ZD225MAT
AVX
2.2µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C3
222215095001
220µF Aluminum Capacitor, SMD, 35V
1
C4
1210YD106MAT
AVX
10µF Ceramic Capacitor, X5R, Size 1210, 16V
1
C9
0805ZD105KAT
AVX
1µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C10
06035C223KAT
AVX
22nF Ceramic Capacitor, X7R, Size 0603, 50V
1
C11, C12, C13
12106D107MAT
AVX
100µF Ceramic Capacitor, X5R, Size 1210, 6.3V
3
C15
06035C102KAT
AVX
1nF Ceramic Capacitor, X7R, Size 0603, 50V
1
D1
SD103BWS
Vishay
Small Signal Schottky Diode
1
L1
CDRH104RNP-3R8
Sumida
3.8µH Inductor, 6A Saturation Current
1
Q1
FDS6910
Fairchild
Dual 30V N-Channel MOSFET 17mΩ RDS(ON) @ 4.5V
1
R1
CRCW06032R21FKEY3
2.21Ω Resistor, Size 0603, 1%
1
Vishay
Vishay Dale
R5
CRCW06031R21FKEY3
Vishay Dale
1.21Ω Resistor, Size 0603, 1%
1
R6, R9
CRCW06031002FKEY3
Vishay Dale
10k Resistor, Size 0603, 1%
2
R15
CRCW06034022FKEY3
Vishay Dale
40.2k Resistor, Size 0603, 1%
1
U1
MIC2164YMM
Micrel. Inc.
300kHz Buck Controller
1
U2
MIC5233-5.0YM5
Micrel. Inc.
LDO
1
February 12, 2015
33
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
MIC2164-2 12V to 3.3V @ 15A Buck Converter
February 12, 2015
34
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Bill of Materials (MIC2164-2 12V to 3.3V @ 15A)
Item
Part Number
Manufacturer
Description
Qty.
C1, C8, C17, C19 06035C104KAT
AVX
0.1µF Ceramic Capacitor, X7R, Size 0603, 50V
4
C2
0805ZD225MAT
AVX
2.2µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C3
222215095001
220µF Aluminum Capacitor, SMD, 35V
1
C4, C5
1210YD226MAT
AVX
22µF Ceramic Capacitor, X5R, Size 1210, 16V
2
C9
0805ZD105KAT
AV)
1µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C10
06035C472KAT
AVX
4.7nF Ceramic Capacitor, X7R, Size 0603, 50V
1
C11
16ME1000WGL
Sanyo
1000µF Aluminum Capacitor, 16V
1
C12
12106D107MAT
AVX
100µF Ceramic Capacitor, X5R, Size 1210, 6.3V
1
C15
06035C102KAT
AVX
1nF Ceramic Capacitor, X7R, Size 0603, 50V
1
D1
SD103BWS
Small Signal Schottky Diode
1
1.0µH Inductor, 29A DC Current
1
Vishay
Vishay
(21)
L1
HCP1305-1R0
Q1
FDMS7672
Fairchild
30V N-Channel MOSFET 6.9mΩ RDS(ON) @ 4.5V
1
Q2, Q3
FDS8874
Fairchild
30V N-Channel MOSFET 7.0mΩ RDS(ON) @ 4.5V
2
R1
CRCW06032R21FKEY3
Vishay Dale
2.21Ω Resistor, Size 0603, 1%
1
R5
CRCW06031R21FKEY3
Vishay Dale
1.21Ω Resistor, Size 0603, 1%
1
R6
CRCW06031002FKEY3
Vishay Dale
10k Resistor, Size 0603, 1%
1
R9
CRCW06034021FKEY3
Vishay Dale
4.02k Resistor, Size 0603, 1%
1
R15
CRCW06033241FKEY3
Vishay Dale
3.24k Resistor, Size 0603 1%
1
U1
MIC2164-2YMM
Micrel. Inc.
600kHz Buck Controller
1
U2
MIC5233-5.0YM5
Micrel. Inc.
LDO
1
Cooper Bussmann
Note:
21. Cooper Bussman: www.cooperindustries.com.
February 12, 2015
35
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
MIC2164-3 12V to 1.8V @ 10A Buck Converter
February 12, 2015
36
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Bill of Materials (MIC2164-3 12V to 1.8V @ 10A)
Item
Part Number
Manufacturer
Description
Qty.
C1, C8, C17, C19 06035C104KAT
AVX
0.1µF Ceramic Capacitor, X7R, Size 0603, 50V
4
C2
0805ZD225MAT
AVX
2.2µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C3
222215095001
220µF Aluminum Capacitor, SMD, 35V
1
C4
1210YD106MAT
AVX
10µF Ceramic Capacitor, X5R, Size 1210, 16V
1
C9
0805ZD105KAT
AVX
1µF Ceramic Capacitor, X5R, Size 0805, 10V
1
C10
06035C222KAT
AVX
2.2nF Ceramic Capacitor, X7R, Size 0603, 50V
1
C11
6SEPC560MX
560µF OSCON Capacitor, 6.3V
1
C12
12106D107MAT
AVX
100µF Ceramic Capacitor, X5R, Size 1210, 6.3V
1
C15
06035C102KAT
AVX
1nF Ceramic Capacitor, X7R, Size 0603, 50V
1
D1
SD103BWS
Small Signal Schottky Diode
1
L1
HCF1305-1R0
1.0µH Inductor, 20A Saturation Current
1
Q1, Q2
FDS7764A
30V N-Channel MOSFET 7.5mΩ Rds(on) @ 4.5V
2
R1
CRCW06032R21FKEY3
Vishay Dale
2.21Ω Resistor, Size 0603, 1%
1
R5
CRCW06031R21FKEY3
Vishay Dale
1.21Ω Resistor, Size 0603, 1%
1
R6
CRCW06031002FKEY3
Vishay Dale
10k Resistor, Size 0603, 1%
1
R9
CRCW06032001FKEY3
Vishay Dale
2k Resistor, Size 0603, 1%
1
R15
CRCW06038061FKEY3
Vishay Dale
8.06k Resistor, Size 0603, 1%
1
U1
MIC2164-3YMM
Micrel. Inc.
1MHz Buck Controller
1
U2
MIC5233-5.0YM5
Micrel. Inc.
LDO
1
February 12, 2015
Vishay
Sanyo
Vishay
Cooper Bussmann
Fairchild
37
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
Package Information
10-Pin MSOP (MM)
February 12, 2015
38
Revision 4.1
Micrel, Inc.
MIC2164/-2/-3/C
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http://www.micrel.com
Micrel, Inc. is a leading global manufacturer of IC solutions for the worldwide high performance linear and power, LAN, and timing & communications
markets. The Company’s products include advanced mixed-signal, analog & power semiconductors; high-performance communication, clock
management, MEMs-based clock oscillators & crystal-less clock generators, Ethernet switches, and physical layer transceiver ICs. Company
customers include leading manufacturers of enterprise, consumer, industrial, mobile, telecommunications, automotive, and computer products.
Corporation headquarters and state-of-the-art wafer fabrication facilities are located in San Jose, CA, with regional sales and support offices and
advanced technology design centers situated throughout the Americas, Europe, and Asia. Additionally, the Company maintains an extensive network
of distributors and reps worldwide.
Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this datasheet. This
information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry,
specifications and descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual
property rights is granted by this document. Except as provided in Micrel’s terms and conditions of sale for such products, Micrel assumes no liability
whatsoever, and Micrel disclaims any express or implied warranty relating to the sale and/or use of Micrel products including liability or warranties
relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product
can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical
implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A
Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully
indemnify Micrel for any damages resulting from such use or sale.
© 2009 Micrel, Incorporated.
February 12, 2015
39
Revision 4.1