BAW75-BAW76 150mA Axial Leaded High Speed Switching Diodes Features · High switching speed: max. 4 ns · Reverse voltage:max. 25V , 50V · Peak reverse voltage:max. 35V, 75 V · Pb / RoHS Free B A A C D Mechanical Data DO-35 · Case: DO-35 Glass Case · Weight: approx. 0.13g Dim Min A 25.40 Max ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Symbol BAW75 Maximum Peak Reverse Voltage BAW76 BAW75 Maximum Reverse Voltage BAW76 Maximum Average Forward Current Value Unit 25 VRM V 50 35 VRM V 75 IF(AV) 150 (1) mA Maximum Power Dissipation PD 500 (1) mW Maximum Surge Forward Current at t < 1µs , Tj = 25 °C IFSM Half Wave Recitication with Resistive Load , f ≥ 50Hz 2 A Maximum Junction Temperature TJ 200 °C Storage Temperature Range TS -65 to + 200 °C J Parameter Reverse Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time Symbol BAW75 BAW76 BAW75 BAW76 BAW75 BAW76 BAW75 BAW76 IR VF V(BR)R Test Condition VR = 25 V VR = 50 V IF = 30 mA IF = 100 mA Test with 5µA pulses Cd f = 1MHz ; VR = 0 Trr IF = 10 mA , IR = 10 mA Irr = 1mA Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. 1of1 Min Typ Max 35 75 - - 100 100 1.0 1.0 4.0 2.0 - - 4 Unit nA V V pF ns FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 1000 400 Forward Current , IF (mA) POWER DISSIPATION, PD (mW) 500 300 200 100 10 TJ = 25°C 1 100 0 0.1 0 100 200 0 0.4 0.8 1.2 1.4 1.6 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 10 5 Reverse Current , IR (nA) Diode Capacitance , Cd (pF) 1.0 0.9 0.8 0.7 f = 1MHz; TJ = 25°C 0.6 10 4 10 3 10 2 10 0.5 1 0.4 0 10 0 20 100 Junction Temperature , Ta (°C) Reverse Voltage , VR (V) 2 of 2 200