SMS2310 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A L 3 3 C B Top View 1 1 2 K E 2 APPLICATION Battery Switch DC/DC Converter D F REF. A B C D E F MARKING S10 H G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7’ inch Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 60 V Continuous Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current 1 IDM 10 A Power Dissipation PD 0.35 W Thermal Resistance, Junction to Ambient 2 RθJA 357 °C/W Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C http://www.SeCoSGmbH.com/ 18-Dec-2014 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 SMS2310 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions STATIC CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS = 0, ID = 250μA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V, VDS =0 Zero Gate Voltage Drain Current IDSS - - 1 μA VGS=0, VDS =60V VGS(th) 0.5 - 2 V VDS = VGS, ID = 250μA - - 105 - - 125 Gate Threshold Voltage 3 Static Drain-Source On Resistance 3 RDS(ON) mΩ VGS=10V, ID =3A VGS=4.5V, ID =3A Forward Transconductance 3 gFS 1.4 - - S VDS=15V,ID =2A Body diode forward voltage 3 VSD - - 1.2 V VGS=0, IS =3A pF VDS=30V, VGS=0, f=1MHz nS VDD=30V, VGS=10V, ID=1.5A, RGEN=1Ω, nC ID= 3A VDS= 30V VGS= 4.5V Dynamic Characteristics 4 Input Capacitance Ciss - 247 - Output Capacitance Coss - 34 - Reverse Transfer Capacitance Crss - 19.5 Switching Characteristics Turn-On Delay Time 4 td(ON) - 6 - tr - 15 - td(OFF) - 15 - Fall time tr - 10 - Total Gate Charge Qg - 6 - Gate-Source Charge Qgs - 1 - Gate-Drain Charge Qgd - 1.3 - Rise time Turn-Off Delay Time Notes: 1. 2. 3. 4. Repetitive rating : Pulse width limited by junction temperature. Surface mounted on FR4 board , t≤10s. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. Guaranteed by design, not subject to producting. http://www.SeCoSGmbH.com/ 18-Dec-2014 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 SMS2310 Elektronische Bauelemente 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 18-Dec-2014 Rev. B Any changes of specification will not be informed individually. Page 3 of 3