SMG2343 -4.1A , -30V , RDS(ON) 45 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. A L 3 3 C B Top View 1 1 FEATURES 2 K Lower Gate Threshold Voltage Small Package Outline E 2 D F G REF. MARKING A B C D E F 2343 Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 1 7 inch 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C 3 -4.1 ID TA=70°C Pulsed Drain Current 1 Power Dissipation TA=25°C IDM -12 A PD 1.38 W 0.01 W / °C -55~150 °C 90 °C / W Linear Derating Factor Operating Junction and Storage Temperature Range A -3.5 Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A 3 RθJA Any changes of specification will not be informed individually. Page 1 of 4 SMG2343 -4.1A , -30V , RDS(ON) 45 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID= -250uA Gate-Threshold Voltage VGS(th) -1.0 - -2.0 V VDS=VGS, ID= -250uA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V - - -1 Drain-Source Leakage Current IDSS Drain-Source On-Resistance 2 Forward Transconductance RDS(ON) gfs µA - - -5 - - 45 VDS= -24V, VGS=0 mΩ - - 65 - 60 - VDS= -24V, VGS=0 VGS= -10V, ID= -4.1A VGS= -4.5V, ID= -3.0A S VDS= -10V, ID= -4A Dynamic 2 Total Gate Charge Qg - 15.2 - Gate-Source Charge Qgs - 5.5 - Gate-Drain Charge Qgd - 1 - Td(on) - 8.6 - Tr - 12.2 - Td(off) - 36.6 - Tf - 20.8 - Input Capacitance Ciss - 590 - Output Capacitance Coss - 75 - Crss - 10 - VSD - - -1 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Reverse Transfer Capacitance Diode Forward Voltage 2 nC VDS= -24V, VGS= -10V, ID= -3A nS VDS= -15V, VGS= -10V, RG=6Ω, RD=15Ω, ID= -1A pF VGS=0,VDS= -25V,f=1.0MHz V IS= -1A, VGS=0, TJ=25°C Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2343 Elektronische Bauelemente -4.1A , -30V , RDS(ON) 45 mΩ Ω P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2343 Elektronische Bauelemente -4.1A , -30V , RDS(ON) 45 mΩ Ω P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4