SMG5403 -2.6A , -30V , RDS(ON) 115 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. A L 3 3 C B Top View 1 1 FEATURES 2 K Lower Gate Threshold Voltage Small Package Outline E 2 D F G REF. MARKING A B C D E F 5403 Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 1 7 inch 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current TA=25°C 3 -2.6 ID TA=70°C Pulsed Drain Current 1 Power Dissipation TA=25°C IDM -10 A PD 1.38 W 0.01 W / °C -55~150 °C 90 °C / W Linear Derating Factor Operating Junction and Storage Temperature Range A -2.2 TJ, TSTG Thermal Resistance Rating Maximum Junction to Ambient http://www.SeCoSGmbH.com/ 17-Sep-2012 Rev. A 3 RθJA Any changes of specification will not be informed individually. Page 1 of 4 SMG5403 -2.6A , -30V , RDS(ON) 115 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID= -250µA Gate-Threshold Voltage VGS(th) -0.5 - -1.4 V VDS=VGS, ID= -250µA Forward Transconductance gFS - 5 - S VDS= -5V,,ID = -2.5A Gate-Body Leakage Current IGSS - - ±100 nA VGS=±12V - - -1 Drain-Source Leakage Current TJ=25°C TJ=70°C Drain-Source On-Resistance 2 2 IDSS RDS(ON) µA - - -25 VDS= -24V, VGS=0 - - 115 VGS= -10V, ID= -2.6A - - 150 - - 200 Total Gate Charge Qg - 4.5 - Gate-Source Charge Qgs - 0.8 - Gate-Drain Charge Qgd - 1.34 - Td(on) - 5.4 - Tr - 4.6 - Td(off) - 31 - Tf - 8 - Input Capacitance Ciss - 415 - Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 42 - Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time VDS= -30V, VGS=0 mΩ VGS= -4.5V, ID= -2A VGS= -2.5V, ID= -1A nC VDS= -15V, VGS= -4.5V, ID= -2.5A nS VDS= -15V, VGS= -10V, RG=3.3Ω, RD=4.6Ω, ID= -1A pF VGS=0 VDS= -25V, f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 VSD - - -1.2 V IS= -1.2A, VGS=0 Reverse Recovery Time Trr - 16.2 - nS Reverse Recovery Charge Qrr - 9 - nC IS= -2.5A, VGS=0 dl/dt=100A/µS Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 17-Sep-2012 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG5403 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 115 mΩ Ω P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Sep-2012 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG5403 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 115 mΩ Ω P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Sep-2012 Rev. A Any changes of specification will not be informed individually. Page 4 of 4