SMG5403

SMG5403
-2.6A , -30V , RDS(ON) 115 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
The SMG5403 uses advanced trench technology to
provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM
applications.
A
L
3
3
C B
Top View
1
1
FEATURES
2
K
Lower Gate Threshold Voltage
Small Package Outline
E
2
D
F
G
REF.
MARKING
A
B
C
D
E
F
5403
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
1
7 inch
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
TA=25°C
3
-2.6
ID
TA=70°C
Pulsed Drain Current
1
Power Dissipation
TA=25°C
IDM
-10
A
PD
1.38
W
0.01
W / °C
-55~150
°C
90
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
A
-2.2
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
17-Sep-2012 Rev. A
3
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SMG5403
-2.6A , -30V , RDS(ON) 115 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID= -250µA
Gate-Threshold Voltage
VGS(th)
-0.5
-
-1.4
V
VDS=VGS, ID= -250µA
Forward Transconductance
gFS
-
5
-
S
VDS= -5V,,ID = -2.5A
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±12V
-
-
-1
Drain-Source Leakage Current
TJ=25°C
TJ=70°C
Drain-Source On-Resistance
2
2
IDSS
RDS(ON)
µA
-
-
-25
VDS= -24V, VGS=0
-
-
115
VGS= -10V, ID= -2.6A
-
-
150
-
-
200
Total Gate Charge
Qg
-
4.5
-
Gate-Source Charge
Qgs
-
0.8
-
Gate-Drain Charge
Qgd
-
1.34
-
Td(on)
-
5.4
-
Tr
-
4.6
-
Td(off)
-
31
-
Tf
-
8
-
Input Capacitance
Ciss
-
415
-
Output Capacitance
Coss
-
55
-
Reverse Transfer Capacitance
Crss
-
42
-
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
VDS= -30V, VGS=0
mΩ
VGS= -4.5V, ID= -2A
VGS= -2.5V, ID= -1A
nC
VDS= -15V,
VGS= -4.5V,
ID= -2.5A
nS
VDS= -15V,
VGS= -10V,
RG=3.3Ω,
RD=4.6Ω,
ID= -1A
pF
VGS=0
VDS= -25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
-1.2
V
IS= -1.2A, VGS=0
Reverse Recovery Time
Trr
-
16.2
-
nS
Reverse Recovery Charge
Qrr
-
9
-
nC
IS= -2.5A, VGS=0
dl/dt=100A/µS
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
17-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG5403
Elektronische Bauelemente
-2.6A , -30V , RDS(ON) 115 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
17-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG5403
Elektronische Bauelemente
-2.6A , -30V , RDS(ON) 115 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
17-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4