SMS318 220mA, 50V, RDS(ON) 3.5 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A L 3 3 C B Top View 1 1 K MECHANICAL DATA 2 Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating(Matte Tin Finish Annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Marking Code SMS318 H03 / SS 2 D F G REF. A B C D E F MARKING Product E Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage(RGS≦20KΩ) VDGR 50 V Continuous Gate-Source Voltage VGSS ±20 V ID 220 mA PD 300 mW Thermal Resistance, Junction to Ambient1 RθJA 417 °C/W Junction and Storage Temperature Range TJ, TSTG -55~150 °C Continuous Drain Current Thermal Resistance Rating Power Dissipation 1 http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. C Any changes of specification will not be informed individually. Page 1 of 4 SMS318 220mA, 50V, RDS(ON) 3.5 N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Off Characteristics Max. Unit Teat Conditions 2 Drain-Source Breakdown Voltage BVDSS 50 - - V VGS = 0, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 0.5 μA VGS= 0V, VDS = 50V Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V, VDS = 0V On Characteristics 2 Gate Threshold Voltage VGS(th) 0.5 - 2.0 V VDS = VGS, ID =250μA Static Drain-Source On Resistance RDS(ON) - - 3.5 Ω VGS=10V, ID =0.22A gFS 100 - - mS Forward Transconductance VDS=25V,,ID =0.2A, f=1.0KHz Dynamic Characteristics Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 8.0 pF VDS=10V, VGS=0, f=1MHz Switching Characteristics Turn-On Delay Time td(ON) - - 20 Turn-Off Delay Time td(OFF) - - 20 nS VDD=30V, ,ID=0.2A, RGEN=50Ω, Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout. 2. Short duration pulse test used to minimize self-heating effect. http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. C Any changes of specification will not be informed individually. Page 2 of 4 SMS318 Elektronische Bauelemente 220mA, 50V, RDS(ON) 3.5 N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. C Any changes of specification will not be informed individually. Page 3 of 4 SMS318 Elektronische Bauelemente 220mA, 50V, RDS(ON) 3.5 N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. C Any changes of specification will not be informed individually. Page 4 of 4