SECOS SMS318

SMS318
220mA, 50V, RDS(ON) 3.5 
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES





SOT-23
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
A
L
3
3
C B
Top View
1
1
K
MECHANICAL DATA







2
Case: SOT-23
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating(Matte Tin Finish Annealed over
Alloy 42 leadframe)
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Marking Code
SMS318
H03 / SS
2
D
F
G
REF.
A
B
C
D
E
F
MARKING
Product
E
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
50
V
Drain-Gate Voltage(RGS≦20KΩ)
VDGR
50
V
Continuous Gate-Source Voltage
VGSS
±20
V
ID
220
mA
PD
300
mW
Thermal Resistance, Junction to Ambient1
RθJA
417
°C/W
Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Continuous Drain Current
Thermal Resistance Rating
Power Dissipation 1
http://www.SeCoSGmbH.com/
28-Apr-2011 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4
SMS318
220mA, 50V, RDS(ON) 3.5 
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Off Characteristics
Max.
Unit
Teat Conditions
2
Drain-Source Breakdown Voltage
BVDSS
50
-
-
V
VGS = 0, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
-
-
0.5
μA
VGS= 0V, VDS = 50V
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V, VDS = 0V
On Characteristics
2
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V
VDS = VGS, ID =250μA
Static Drain-Source On Resistance
RDS(ON)
-
-
3.5
Ω
VGS=10V, ID =0.22A
gFS
100
-
-
mS
Forward Transconductance
VDS=25V,,ID =0.2A, f=1.0KHz
Dynamic Characteristics
Input Capacitance
Ciss
-
-
50
pF
Output Capacitance
Coss
-
-
25
pF
Reverse Transfer Capacitance
Crss
-
-
8.0
pF
VDS=10V, VGS=0, f=1MHz
Switching Characteristics
Turn-On Delay Time
td(ON)
-
-
20
Turn-Off Delay Time
td(OFF)
-
-
20
nS
VDD=30V, ,ID=0.2A,
RGEN=50Ω,
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout.
2. Short duration pulse test used to minimize self-heating effect.
http://www.SeCoSGmbH.com/
28-Apr-2011 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 4
SMS318
Elektronische Bauelemente
220mA, 50V, RDS(ON) 3.5 
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
28-Apr-2011 Rev. C
Any changes of specification will not be informed individually.
Page 3 of 4
SMS318
Elektronische Bauelemente
220mA, 50V, RDS(ON) 3.5 
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
28-Apr-2011 Rev. C
Any changes of specification will not be informed individually.
Page 4 of 4