SMS840 0.13A , 50V , RDS(ON) 10 Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Low On-Resistance : 10Ω Low Input Capacitance: 30PF Low Out Put Capacitance : 10PF Low Threshold : 2V Fast Switching Speed : 2.5ns A L 3 3 C B Top View 1 1 2 K E 2 APPLICATIONS D DC-DC Converter Cellular & PCMCIA Card Cordless Telephone Power Management in Portable and Battery etc MARKING P-Channel D3 F G REF. A B C D E F G1 PD Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 S2 PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS -50 V Continuous Gate-Source Voltage VGSS ±20 V Continuous Drain Current @TA=25°C ID -130 mA Pulsed Drain Current(tp≤10us) IDM -520 mA Power Dissipation @TA=25°C PD 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Junction and Storage Temperature Range TJ, TSTG -55~150 °C http://www.SeCoSGmbH.com/ 25-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMS840 0.13A , 50V , RDS(ON) 10 Ω P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Static Characteristics Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Max. Unit Teat Conditions 1 -50 - - - - -0.1 V µA - - -15 VGS =0, ID = -250µA VGS=0, VDS = -25V VGS=0, VDS = -50V Gate-Source Leakage Current IGSS - - ±60 µA VGS=±20V, VDS =0 Gate-Source Threshold Voltage VGS(th) -0.8 - -2 V VDS =VGS, ID = -1mA Static Drain-Source On Resistance RDS(ON) - 5 10 Ω VGS= -5V, ID = -0.1A gFS 50 - - mS VDS= -25V,,ID = -0.1A, f=1.0KHz pF VDS= -5V, VGS=0, f=1MHz nS VDD= -15V, ,ID= -2.5A, RL=50Ω, Forward Transconductance Dynamic Characteristics Input Capacitance Ciss - 30 - Output Capacitance Coss - 10 - Reverse Transfer Capacitance Crss - 5 - Switching Characteristics 2 Turn-On Delay Time Td(ON) - 25 - Turn-Off Delay Time Td(OFF) - 16 - Rise Time Tr - 1 - Fall Time Tf - 8 - Gate Charge QT - 6000 - pC Source-Drain Diode Characteristics Continuous Current IS - - 0.13 Pulsed Current ISM - - 0.52 VSD - -2.5 - Forward Voltage 2 A V Notes: 1. Pulse Test : PW≤300us, Duty Cycle≤2%. 2. Switching Time is Essentially Independent of Operating Temperature. http://www.SeCoSGmbH.com/ 25-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMS840 Elektronische Bauelemente 0.13A , 50V , RDS(ON) 10 Ω P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 25-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMS840 Elektronische Bauelemente 0.13A , 50V , RDS(ON) 10 Ω P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 25-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4