SMG5406 3.6A , 30V , RDS(ON) 65 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications. A L 3 3 C B Top View 1 1 2 K E 2 FEATURES D Simple Drive Requirement Small Package Outline F REF. MARKING A B C D E F 5406 Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 PACKAGE INFORMATION Package MPQ SC-59 3K H G REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW Leader Size 7 inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA=25°C 2 Continuous Drain Current , VGS@10V 3.6 ID A TA=70°C Pulsed Drain Current 1 Power Dissipation TA=25°C 2.8 IDM 10 A PD 1.38 W 0.01 W / °C -55~150 °C 90 °C / W Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG5406 3.6A , 30V , RDS(ON) 65 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250µA Gate-Threshold Voltage VGS(th) 1 - 3 V VDS=VGS, ID=250µA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V - - 1 Drain-Source Leakage Current IDSS Drain-Source On-Resistance 1 Forward Transconductance RDS(ON) gfs µA - - 10 - - 65 VDS=24V, VGS=0 mΩ - - 90 - 11 - VDS=30V, VGS=0 VGS=10V, ID=3.6A VGS=4.5V, ID=2.8A S VDS=5V, ID=3.6A Dynamic 1 Total Gate Charge Qg - 3 5 Gate-Source Charge Qgs - 0.8 - Gate-Drain Charge Qgd - 1.8 - Td(on) - 5 - Tr - 9 - Td(off) - 11 - Tf - 2 - Input Capacitance Ciss - 120 290 Output Capacitance Coss - 62 - Reverse Transfer Capacitance Crss - 24 - Rg - 3.5 Turn-on Delay Time 1 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC VDS=24V, VGS=4.5V, ID=2.5A nS VDS=15V, VGS=10V, RG=3.3Ω, RD=15Ω, ID=1A pF VGS=0, VDS=25V, f=1.0MHz - Ω f=1.0MHz Source-Drain Diode Diode Forward Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge VSD - - 1.0 V IS=1A, VGS=0 TRR - 7.5 - ns QRR - 2.5 - nC IS=3.5A, VGS=0 dI/dt=100A/µs Notes: 1. Pulse width≦300us, duty cycle≦2%. http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG5406 Elektronische Bauelemente 3.6A , 30V , RDS(ON) 65 mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG5406 Elektronische Bauelemente 3.6A , 30V , RDS(ON) 65 mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4