BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current - 0.1 A ICM: Collector-base voltage BC556 -80 V VCBO: BC557 -50 V BC558 -30 V Operating and storage junction temperature range 1 2 3 1 2 3 1. COLLECTOR 2. BASE TJ, Tstg: -55℃ to +150℃ 3 . EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless Symbol Collector-base breakdown voltage Test specified) conditions VCBO Ic= -100µA , IE=0 -30 BC556 -65 VCEO = - 2mA , IB=0 VEBO Collector cut-off current ICBO V -6 BC556 VCE= -60 V, IB=0 ICEO V -0.1 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -40 V, IB=0 -0.1 µA µA VCE= -25 V, IB=0 BC558 Emitter cut-off current I E= -100µA, IC=0 BC558 BC557 V -45 VCB= -70V, IE=0 BC556 BC557 UNIT -30 BC558 Emitter-base breakdown voltage MAX -50 BC558 BC557 Collector cut-off current MIN -80 BC556 BC557 Collector-emitter breakdown voltage otherwise BC556 BC557 IEBO VEB= -5V, IC=0 -0.1 µA BC558 DC current gain BC556 BC557 BC558 BC557A/558A BC556B/BC557B/BC558B BC556C/BC557C/BC558C 120 120 120 120 180 420 500 800 800 220 460 800 hFE(1) VCE=-5V, IC= -2mA Collector-emitter saturation voltage VCE(sat) I C=-100 mA, IB= -5mA -0.3 V Base-emitter saturation voltage VBE(sat) I C= -100 mA, IB=-5mA -1 V Transition frequency fT VCE= -5V, IC= -10mA f = 100MHz 150 MHz Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente Typical Characteristics 1000 -50 IB = -400µA VCE = -5V IB = -350µA -40 IB = -300µA -35 IB = -250µA -30 IB = -200µA -25 -20 IB = -150µA -15 IB = -100µA -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 10 IB = -50µA -5 1 -0.1 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -100 -10 VCE = -5V IC = -10 IB V BE(sat) -0.1 VCE(sat) -10 -1 -0.1 -1 -10 -100 -0.2 f=1MHz IE = 0 1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Cob(pF), CAPACITANCE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -100 Figure 2. DC current Gain IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -0.01 -0.1 -10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -1 1000 VCE = -5V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 4.700 0.169 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 01-Jun-2002 Rev. A 0.135 1.270TYP e http://www.SeCoSGmbH.com Dimensions In Inches 0.380 0.063 0.000 0.015 Any changing of specification will not be informed individual Page 3 of 3