MMBTA92W PNP Silicon Elektronische Bauelemente General Purpose Transistor FEATURES n n n n RoHS Compliant Product Power dissipation & Collector current Pcm: 0.2W Icm: -0.3A High voltage V(BR): -300V SOT-323 A L B S Top View V 3. Collector G C 2. Base 1.Emitter D H J K Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm č Tamb=25¥ ELECTRICAL CHARACTERISTICS Parameter unless Symbol Ď otherwise Test specified conditions Collector-base breakdown voltage V(BR)CBO Ic= -100uA， IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA， Emitter-base breakdown voltage V(BR)EBO IE= -100XA， IC=0 Collector cut-off current ICBO VCB=-200 V , IE=0 Emitter cut-off current IEBO VEB= -5V , IB=0 MIN MAX UNIT -300 V -300 V -5 V IC=0 -0.25 μA -0.1 μA HFE（1） VCE= -10V, IC= - 1mA 60 HFE（2） VCE= -10V, IC=-10mA 100 HFE（3） VCE=-10V, IC=-30mA 60 Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 m A, IB=-2mA -0.9 V DC current gain 200 VCE=-20V, IC=-10mA Transition frequency fT 50 MHz f=30MHz DEVICE MARKING MMBTA92W=K3R http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 MMBTA92W PNP Silicon Elektronische Bauelemente General Purpose Transistor MMBTA92W 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 −55°C 100 50 0 0.1 1.0 100 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2