MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES · · Plastic-Encapsulate Transistors SOT-323 Power dissipation & Collector current A Pcm: 0.2W Icm: 0.3A · L High voltage V(BR): 300V B S Top View V 3. Collector G 2. Base C 1.Emitter D H J K Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm ELECTRICAL č Tamb=25¥ CHARACTERISTICS Parameter Ď unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 Collector cut-off current ICBO VCB=200 V , IE=0 Emitter cut-off current IEBO VEB= 5V , IE=0 IB=0 MIN MAX UNIT 300 V 300 V 5 V IC=0 0.25 μA 0.1 μA HFE（1） VCE= 10V, IC= 1mA 60 HFE（2） VCE= 10V, IC=10mA 100 HFE（3） VCE=10V, IC=30mA 70 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 m A, IB=2mA 0.9 V DC current gain 200 VCE= 20V, IC= 10mA Transition frequency fT 50 MHz f=30MHz DEVICE MARKING MMBTA42W=K3M http://www.SeCoSGmbH.com Any changing of specification will not be informed individual MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42W 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 −55°C 20 0 0.1 1.0 100 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 80 70 60 50 40 30 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://www.SeCoSGmbH.com Any changing of specification will not be informed individual