KTC3205 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92L FEATURE Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current G H J A 1Emitter 2Collector 3Base D CLASSIFICATION OF hFE REF. Product-Rank KTC3205-O KTC3205-Y Range 100~200 160~320 B A B C D E F G H J K K E C F Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Continuous Collector Current IC 2 A Collector Power Dissipation PC 1 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut - Off Current ICBO - - 0.1 µA VCB=30V, IE=0 Emitter cut-off current IEBO - - 0.1 µA VEB=5V, IC=0 DC Current Gain hFE 100 - 320 VCE(sat) - - 2 V IC=1.5A, IB=30mA VBE - - 1 V VCE=2V, IC=500mA fT - 120 - MHz VCE=2V, IC=500mA Cob - 13 - pF Collector to Emitter Saturation Voltage Base – Emitter Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 15-Nov-2012 Rev. A Test Conditions VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1