RoHS 2SD468 2SD468 D T ,. L TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ N C O 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol R T Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage Base-emitter voltage J E Transition frequency Collector output capacitance W O Test conditions MIN TYP MAX Ic=10µA, IE=0 25 V Ic=1mA, IB=0 20 V IE=10µA, IC=0 5 V ICBO VCB=20V, IE=0 1 µA IEBO VEB=4V, IC=0 1 µA hFE(1) VCE=2V, IC=500mA VCE(sat) IC=800mA, IB=80mA 0.5 V VBE VCE=2V, IC=500mA 1 V fT VCE=2V, IC=500mA 190 MHz Cob VCB=10V, IE=0, f=1MHz 22 pF 85 240 CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. UNIT B C 85-170 120-240 Http:// www.wej.cn E-mail:[email protected]