FAIRCHILD BSR14_12

BSR14
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
• Sourced from Process 19.
• See BCW65C for characteristics.
C
E
SOT-23
B
Mark:U8
Absolute Maximum Ratings*
Symbol
Ta = 25C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
800
mA
-55 to +150
C
IC
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
PD
RJA
Ta = 25C unless otherwise noted
Max.
Parameter
Total Device Dissipation
Derate above 25C
Thermal Resistance, Junction to Ambient
Units
*BSR14
350
2.8
mW
mW/C
357
C/W
* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
© 2012 Fairchild Semiconductor Corporation
BSR14 Rev. B0
www.fairchildsemi.com
1
BSR14 — NPN General Purpose Amplifier
September 2012
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10A, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10A, IE = 0
75
V
IE = 10A, IC = 0
6.0
V
ICBO
Collector-Cutoff Current
VCB = 60V,
VCB = 60V, Ta = 150°C
10
10
nA
A
ICEX
Collector-Cutoff Current
VCE = 60V, VEB = 3.0V
10
nA
IBEX
Reverse Base Current
VCE = 60V, VEB = 3.0V
20
nA
IEBO
Emitter-Cutoff Current
VEB = 3.0V, IC = 0
15
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 10V
35
50
75
100
50
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.6
Current Gain - Bandwidth Product
IC = 20mA, VCE = 20V,
f = 100mHz
300
Collector-Base Capacitance
VCB = 10V, IE = 0,
f = 1.0MHz
hie
Input Impedance
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
hfe
Small-Signal Current Gain
hoe
Output Admittance
300
0.3
1.0
V
V
1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
fT
CCB
MHz
8.0
pF
2.0
8.0
k
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
50
300
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
5
35
S
10
ns
25
ns
225
ns
60
ns
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 30V, VBE(OFF) =
0.5V, IC = 150mA,
IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7
Xtf=3 Rb=10)
© 2012 Fairchild Semiconductor Corporation
BSR14 Rev. B0
www.fairchildsemi.com
2
BSR14 — NPN General Purpose Amplifier
Electrical Characteristics
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I62
© Fairchild Semiconductor Corporation
www.fairchildsemi.com