DIODES 2SA733P

2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings*
Symbol
TA=25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5.0
V
-500
mA
-55 to +150
°C
IC
TJ, TSTG
Collector current
- Continuous
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Max
Units
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
PD
Parameter
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
www.fairchildsemi.com
1
2SA733 — PNP General Purpose Amplifier
September 2009
Symbol
TA=25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
VCBO
Collector-Base Breakdown Voltage
VCEO
IC = -10μA, IE = 0
-60
V
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0
-50
V
VEBO
Emitter-Base Breakdown Voltage
IE = -10μA, IC = 0
-5.0
V
ICBO
Collector Cut-off Current
VCB = -60V, IE = 0
-100
nA
IEBO
Emitter Cut-off Current
VEB = -5V, IC = 0
-100
nA
On Characteristics
DC Current Gain
VCE = -6V, IC = -1mA
90
600
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -100mA, IB = -10mA
-15
-300
mV
VBE(on)
Base-Emitter On Voltage
VCE = -6V, IC = -1mA
-580
-680
mV
Current Gain Bandwidth Product
VCE = -6V, IC = -10mA
50
Cob
Output Capacitance
VCB = -10V, IE = 0
f = 1.0MHz
6
pF
NF
Noise Figure
VCE = -6V, IC = -0.3mA
RG = 10kΩ, f = 100Hz
20
dB
hFE
Small Signal Characteristics
fT
MHz
* Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
hFE Classification
Classification
R
Q
P
K
hFE
90 ~ 180
135 ~ 270
200 ~ 400
300 ~ 600
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
www.fairchildsemi.com
2
2SA733 — PNP General Purpose Amplifier
Electrical Characteristics
2SA733 — PNP General Purpose Amplifier
Physical Dimension
TO-92
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
www.fairchildsemi.com
3
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com