FJX992 PNP Audio-Frequency Low-Noise Amplifier Features • High Voltage: VCEO = -120 V • Excellent hFE Linearity • High hFE: hFE = 200 ~ 700 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method FJX992TF 992D SOT-323 3L (SC70 3L) Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit V VCEO Collector-Emitter Voltage -120 VCBO Collector-Base Voltage -120 V VEBO Emitter-Base Voltage -5 V -100 mA -55 to +150 °C IC TJ , TSTG Collector Current Junction and Storage Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. © 2010 Fairchild Semiconductor Corporation FJX992 Rev. 1.1.0 www.fairchildsemi.com 1 FJX992 — PNP Audio-Frequency Low-Noise Amplifier January 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 235 mW Derate Above TA = 25°C 1.88 mW/°C Thermal Resistance, Junction to Ambient 530 °C/W Note: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit -120 V V(BR)CBO Collector-Emitter Breakdown Voltage(4) IC = -1 mA, IB = 0 Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -120 V V(BR)EBO Off Characteristics V(BR)CEO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 ICBO Collector-Base Cut-Off Current VCB = -120 V, IE = 0 -100 nA IEBO Emitter-Base Cut-Off Current VEB = -5 V, IC = 0 -100 nA -5 V On Characteristics hFE DC Current Gain(4) VCE = -6 V, IC = -0.1 mA 150 VCE = -6 V, IC = -2 mA 200 700 VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -1 mA -0.3 V VBE(on) Base-Emitter On Voltage VCE = -6 V, IC = -1 mA -0.65 V Small Signal Characteristics fT Cob Current Gain - Bandwidth Product VCE = -6 V, IC = -1 mA Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 100 MHz 4 pF Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2010 Fairchild Semiconductor Corporation FJX992 Rev. 1.1.0 www.fairchildsemi.com 2 FJX992 — PNP Audio-Frequency Low-Noise Amplifier Thermal Characteristics(3) 1 1000 o VCE = 6V o Tj = 100 C IC = 10 IB VCE(sat),[V] SATURATION VOLTAGE hFE, DC CURRENT GAIN Tj = 125 C o Tj = 75 C o Tj = 25 C 100 10 0.1 1 10 o Tj = 125 C o Tj = 100 C 0.1 o Tj = 25 C o Tj = 75 C 0.01 0.1 100 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 50 1 o Tj = 125 C o Tj = 100 C o o Tj = 75 C Tj = 25 C 0.1 0.1 1 10 40 o Tj = 100 C 30 o Tj = 75 C 20 o Tj = 25 C 10 0 0.2 100 IC [mA], COLLECTOR CURRENT 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VBE(on) [V], BASE-EMITTER ON VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10000 o 10 1 IEBO[pA], Emitter-Base Cutoff Current ICBO[nA], Collector-Base Cutoff Current VCE = 6V o Tj = 125 C IC [mA], COLLECTOR CURRENT VBE(sat)[V], SATURATION VOLTAGE IC = 10 IB o Tj = 125 C o Tj = 100 C o 0.1 Tj = 75 C o Tj = 25 C 0.01 10 1000 o Tj = 100 C 100 o Tj = 75 C 10 o Tj = 25 C 1 0.1 100 1 VCB [V], Collector-Base Voltage 2 3 4 5 VEB [V], Emitter-Base Voltage Figure 5. Collector-Base Cut-Off Current Figure 6. Emitter-Base Cut-Off Current © 2010 Fairchild Semiconductor Corporation FJX992 Rev. 1.1.0 Tj = 125 C www.fairchildsemi.com 3 FJX992 — PNP Audio-Frequency Low-Noise Amplifier Typical Performance Characteristics FJX992 — PNP Audio-Frequency Low-Noise Amplifier 10 9 8 7 100 f = 1MHz f = 1MHz CIB [pF], Input Capacitance COB [pF], Output Capacitance Typical Performance Characteristics (Continued) 6 5 4 3 2 10 1 1 2 3 4 5 6 7 8 1 9 10 1 2 VCB [V], Collector-Base Voltage Collector Current, IC[mA] FBSOA 100 Icmax 10 1 Vceo(Max) 1 10 100 Collector-Emitter Voltage, VCE[V] 5 1 D=1% 2% 0.1 5% Rthja(t)=r(t)*Rthja Rthja=530C/W 10% 30% 0.01 50% 1E-3 Single Pulse 1E-4 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, time(sec) Figure 9. Forward Bias Safe Operating Area Figure 10. Transient Thermal Resistance © 2010 Fairchild Semiconductor Corporation FJX992 Rev. 1.1.0 4 Figure 8. Collector Input Capacitance r(t), Normalized Transient Thermal Resistance Figure 7. Collector Output Capacitance 0.1 0.1 3 VCB [V], Collector-Base Voltage www.fairchildsemi.com 4 FJX992 — PNP Audio-Frequency Low-Noise Amplifier Physical Dimensions SOT-323 Figure 11. 3-LEAD, SC70, EIAJ SC-70, 1.25 MM WIDE Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA03A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA03A_BK.pdf. © 2010 Fairchild Semiconductor Corporation FJX992 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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