FMB200 PNP Multi-Chip General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Block Diagram C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .N2 Dot denotes pin #1 Figure 1. Device Package Figure 2. Internal Connections Ordering Information Part Number Marking Package Packing Method FMB200 .N2 SSOT 6L Tape and Reel © 1998 Fairchild Semiconductor Corporation FMB200 Rev. 1.1.0 www.fairchildsemi.com 1 FMB200 — PNP Multi-Chip General-Purpose Amplifier January 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -6 V -500 mA -55 to +150 °C IC Parameter Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit 700 mW Derate Above 25°C 5.6 mW/°C Thermal Resistance, Junction to Ambient 180 °C/W Total Device Dissipation Note: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1998 Fairchild Semiconductor Corporation FMB200 Rev. 1.1.0 www.fairchildsemi.com 2 FMB200 — PNP Multi-Chip General-Purpose Amplifier Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = -10 μA, IB = 0 -60 V BVCEO Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IE = 0 -45 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -6.0 V ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -50 nA ICES Collector Cut-Off Current VCE = -40 V, IE = 0 -50 nA IEBO Emitter Cut-Off Current -50 nA hFE DC Current Gain VEB = -4.0 V, IC = 0 IC = -100 μA, VCE = -1.0 V 80 IC = -10 mA, VCE = -1.0 V 100 450 100 350 IC = -150 mA, VCE = -5.0 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage V(4) IC = -10 mA, IB = -1.0 mA -0.2 IC = -200 mA, IB = -20 mA(4) -0.4 IC = -10 mA, IB = -1.0 mA -0.85 IC = -200 mA, IB = -20 mA(4) -1.00 V V Current Gain - Bandwidth Product VCE = -20 V, IC = -20 mA 300 MHz Cob Output Capacitance VCB = -10 V, f = 1.0 MHz 4.5 pF NF Noise Figure IC = -100 μA, VCE = -5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 2.5 dB fT Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation FMB200 Rev. 1.1.0 www.fairchildsemi.com 3 FMB200 — PNP Multi-Chip General-Purpose Amplifier Electrical Characteristics(4) VCESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 V CE = 5V 0.25 125 °C 400 300 - 40 °C 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 0 0.1 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) β = 10 1 125 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 - 40°C 25 °C 125 °C 0.6 25 °C - 40 °C 1 0.8 - 40 °C 0.6 125 °C 0.4 0.4 0 0.1 V CE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 100 200 Figure 6. Base-Emitter On Voltage vs. Collector Current BVCER - BREAKDOWN VOLTAGE (V) Figure 5. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLE CTOR CURRENT (nA) 25 °C 0.1 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Typical Pulsed Current Gain vs. Collector Current 0.8 0.2 0.05 0 0.01 1.2 β = 10 0.15 25 °C 200 100 0.3 100 95 V CB = 50V 10 90 85 1 80 0.1 75 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( ° C) 70 0.1 125 10 100 1000 RESISTANCE (kΩ ) Figure 8. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Figure 7. Collector Cut-Off Current vs. Ambient Temperature © 1998 Fairchild Semiconductor Corporation FMB200 Rev. 1.1.0 1 www.fairchildsemi.com 4 FMB200 — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics V CE - COLLECTOR-EMITTER VOLTAGE (V) 100 f = 1.0 MHz 4 CAPACITANCE (pF) Ta = 25°C 3 Ic = 2 100 uA 300 mA 50 mA 10 Cib Cob 1 0.1 0 100 300 700 1 10 100 V CE - COLLECTOR VOLTAGE (V) 2000 4000 I B - BASE CURRENT (uA) Figure 10. Input and Output Capacitance vs. Reverse Voltage f T - GAIN BANDWIDTH PRODUCT (MHz) Figure 9. Collector Saturation Region 40 300 Vce = 5V 270 ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 0 10 0 1 10 20 50 100 150 I C - COLLECTOR CURRENT (mA) tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Figure 12. Switching Times vs. Collector Current Figure 11. Gain Bandwidth Product vs. Collector Current PD - POWER DISSIPATION (W) 1 SOT-6 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 13. Power Dissipation vs. Ambient Temperature © 1998 Fairchild Semiconductor Corporation FMB200 Rev. 1.1.0 www.fairchildsemi.com 5 FMB200 — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (Continuous) FMB200 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions SSOT Figure 14. 6 LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf. © 1998 Fairchild Semiconductor Corporation FMB200 Rev. 1.1.0 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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