TIP102 NPN Epitaxial Silicon Darlington Transistor Features • • • • • • Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP107 Equivalent Circuit C B TO-220 1 1.Base 2.Collector 3.Emitter R1 R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ E Ordering Information Part Number Top Mark Package Packing Method TIP102 TIP102 TO-220 3L (Single Gauge) Bulk TIP102TU TIP102 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 1 A TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 www.fairchildsemi.com TIP102 — NPN Epitaxial Silicon Darlington Transistor December 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 80 Unit W Electrical Characteristics(1) Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Conditions Min. Max. Unit Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 ICEO Collector Cut-Off Current VCE = 50 V, IB = 0 50 μA ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 50 μA IEBO Emitter Cut-Off Current 2 mA hFE DC Current Gain VEB = 5 V, IC = 0 VCE = 4 V, IC = 3 A 1000 VCE = 4 V, IC = 8 A 200 V 20000 IC = 3 A, IB = 6 mA 2.0 IC = 8 A, IB = 80 mA 2.5 Base-Emitter On Voltage VCE = 4 V, IC = 8 A 2.8 V Output Capacitance VCB = 10 V, IE = 0, f = 0.1 MHz 200 pF VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Cob 100 V Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 www.fairchildsemi.com 2 TIP102 — NPN Epitaxial Silicon Darlington Transistor Thermal Characteristics 10k 5 μA A 700 600μ 0.9mA 0.8mA 4 VCE = 4V A 500μ A 400μ hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1mA IB = 300μA 3 IB = 200μA 2 1 1k IB = 100μA 100 0.1 0 0 1 2 3 4 5 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC Current Gain 10k 10k IC = 500 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat) [mV], SATURATION VOLTAGE Figure 1. Static Characteristic VBE(sat) 1k VCE(sat) 100 0.1 1 10 1k 100 10 1 0.1 100 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 120 100 1ms PC[W], POWER DISSIPATION 100 s 0μ 10 10 DC s 5m IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT 1 TIP100 0.1 TIP101 80 60 40 20 TIP102 0.01 0.1 0 1 10 0 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area © 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 TIP102 — NPN Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP102 — NPN Epitaxial Silicon Darlington Transistor Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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