FDMS8090 PowerTrench® Symmetrical Dual 100 V N-Channel MOSFET Features General Description This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance. Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Applications 100% UIL tested Bridge Topologies RoHS Compliant Synchronous Rectifier Pair Motor Drives Bottom Top S2 S2 S2 G2 D2 Pin 1 D1 G1 1 S1 2 S1 3 S1 S1 S1 G1 8 G2 7 S2 6 S2 Q1 S1 Power 56 Contact to D1 Contact to D2 (backside) (backside) Q2 4 5 S2 Pin 1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 100 Units V ±20 V 40 (Note 1a) 10 (Note 4) 120 (Note 3) 253 59 (Note 1a) Operating and Storage Junction Temperature Range 2.2 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.1 (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking FDMS8090 Device FDMS8090 ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8090 PowerTrench® Symmetrical Dual April 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 70 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 3.0 -10 mV/°C VGS = 10 V, ID = 10 A 11 13 VGS = 6 V, ID = 8 A 15 20 VGS = 10 V, ID = 10 A, TJ = 125 °C 18 20 VDS = 10 V, ID = 10 A 24 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 1285 1800 pF 301 400 pF 16 28 pF 1.7 3.5 Ω ns Switching Characteristics td(on) Turn-On Delay Time 10.6 21 tr Rise Time 4.6 10 ns td(off) Turn-Off Delay Time 17.4 31 ns VDD = 50 V, ID = 10 A, VGS = 10 V, RGEN = 6 Ω tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 10 A 4 10 ns 19 27 nC 10 15 nC 6.1 nC 4.1 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 10 A (Note 2) 0.8 1.3 IF = 10 A, di/dt = 100 A/μs V 49 78 ns 54 86 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 55 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 138 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 253 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 13 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 29 A. 4. Pulsed Id limited by junction temperature,td<=10uS. Please refer to SOA curve for more details. ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 2 www.fairchildsemi.com FDMS8090 PowerTrench® Symmetrical Dual Electrical Characteristics TJ = 25 °C unless otherwise noted 120 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.5 VGS = 10 V ID, DRAIN CURRENT (A) 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 VGS = 7 V 60 VGS = 6 V 40 VGS = 5.5 V 20 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V 3.6 VGS = 5.5 V 2.7 VGS = 6 V 1.8 VGS = 7 V 0.9 0.0 5 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 80 100 120 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 ID = 10 A VGS = 10 V rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 120 30 TJ = 125 oC 20 10 TJ = 25 oC IS, REVERSE DRAIN CURRENT (A) 60 40 TJ = 25 oC 20 TJ = -55 oC 0 4 6 8 200 100 7 8 9 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 10 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 6 Figure 4. On-Resistance vs Gate to Source Voltage 80 TJ = 150 oC 5 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 100 ID = 10 A 50 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS8090 PowerTrench® Symmetrical Dual Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 10000 ID = 10 A Ciss 8 CAPACITANCE (pF) VDD = 50 V VDD = 25 V 6 VDD = 75 V 4 1000 Coss 100 Crss 10 2 0 0 4 8 12 16 f = 1 MHz VGS = 0 V 1 0.1 20 Figure 7. Gate Charge Characteristics 100 60 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 48 VGS = 10 V 36 Limited by Package 24 VGS = 6 V 12 o RθJC = 2.1 C/W 1 0.01 0.1 1 10 0 25 100 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 P(PK), PEAK TRANSIENT POWER (W) 10000 100 us 10 1 1 ms 10 ms 100 ms 1s THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) RθJA = 138 oC/W TA = 25 oC 0.001 0.01 0.1 10 s DC CURVE BENT TO MEASURED DATA 1 10 100 500 VDS, DRAIN to SOURCE VOLTAGE (V) 100 10 SINGLE PULSE RθJA = 138 oC/W 1 TA = 25 oC 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8090 PowerTrench® Symmetrical Dual Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 SINGLE PULSE o RθJA = 138 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 5 www.fairchildsemi.com FDMS8090 PowerTrench® Symmetrical Dual Typical Characteristics TJ = 25 °C unless otherwise noted FDMS8090 PowerTrench® Symmetrical Dual Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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I64 ©2012 Fairchild Semiconductor Corporation FDMS8090 Rev.C1 7 www.fairchildsemi.com FDMS8090 PowerTrench® Symmetrical Dual TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ QFET® CorePLUS™ Green FPS™ TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® ® ® VisualMax™ SupreMOS OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™