FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 8.3 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G D S G TO-220F S MOSFET Maximum Ratings TC = 25 Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage o C unless otherwise noted. Parameter ID Drain Current - Continuous (TC = 25oC) Unit V ±25 V 3.8* - Continuous (TC = 100oC) - Pulsed FDPF4N60NZ 600 A 2.3* IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 1) 15* A (Note 2) 223.8 mJ IAR Avalanche Current (Note 1) 3.8 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt 10 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL - Derate Above 25oC 28 W 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FDPF4N60NZ RθJC Thermal Resistance, Junction to Case, Max. 4.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 1 Unit o C/W www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET November 2013 Part Number FDPF4N60NZ Top Mark FDPF4N60NZ Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TC = 25oC o ID = 250 μA, Referenced to 25 C VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TC = 125oC - - 10 VGS = ±25 V, VDS = 0 V - - ±10 μA μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 1.9 A - 1.9 2.5 Ω gFS Forward Transconductance VDS = 20 V, ID = 1.9 A - 3.3 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 385 510 pF - 40 60 pF - 3.7 5 pF - 8.3 10.8 nC - 2.1 - nC - 3.3 - nC - 12.7 35.4 ns - 15.1 40.2 ns - 30.2 70.4 ns - 12.8 35.6 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480 V ID = 3.8 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300 V, ID = 3.8 A, VGS = 10 V, RG = 25 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 3.8* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 15 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.8 A - - 1.4 V trr Reverse Recovery Time - 168 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.8 A, dIF/dt = 100 A/μs - 0.7 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 31 mH, IAS = 3.8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 3.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 2 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 10 10 1 0.1 o 150 C 1 o 25 C o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.02 0.1 1 10 VDS, Drain-Source Voltage[V] 0.1 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 40 IS, Reverse Drain Current [A] 4.0 3.5 3.0 VGS = 10V 2.5 VGS = 20V 2.0 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o *Note: TC = 25 C 1.5 0.0 1.5 3.0 4.5 6.0 ID, Drain Current [A] 7.5 0.1 0.0 9.0 Figure 5. Capacitance Characteristics 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 VGS, Gate-Source Voltage [V] 10 Ciss Capacitances [pF] 2. 250μs Pulse Test Figure 6. Gate Charge Characteristics 700 100 Coss 10 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4.5 RDS(ON) [Ω], Drain-Source On-Resistance 2 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 Crss 6 4 2 0 0.0 30 3 VDS = 120V VDS = 300V VDS = 480V 8 *Note: ID = 3.8A 1.5 3.0 4.5 6.0 7.5 Qg, Total Gate Charge [nC] 9.0 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 30 4 10μs 10 VGS = 10V ID, Drain Current [A] 100μs ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 1.9A 0.5 1ms 1 10ms Operation in This Area is Limited by R DS(on) 0.1 DC *Notes: o 3 2 1 1. TC = 25 C o 0.01 o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] RθJC = 4.5 C/W 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 5 TJ = 25 oC TJ = 125 oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 4 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) FDPF4N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 o Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 t2 *Notes: 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 1 [sec] t1Rectangular , RectangularPulse Pulse Duration Duration [sec] 5 10 2 10 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 6 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 7 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 9 www.fairchildsemi.com FDPF4N60NZ — N-Channel UniFETTM II MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® μSerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™