FAIRCHILD FQB27P06TM

FQB27P06
P-Channel QFET® MOSFET
-60 V, -27 A, 70 mΩ
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
• -27 A, -60 V, RDS(on) = 70 mΩ (Max) @VGS = -10 V,
ID = -13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
S
D
G
G
D2-PAK
S
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
FQB27P06TM
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
-60
Unit
V
-27
A
-19.1
A
-108
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
560
mJ
IAR
Avalanche Current
(Note 1)
-27
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
12
-7.0
3.75
mJ
V/ns
W
120
0.8
-55 to +175
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
RJA
FQB27P06TM
Parameter
Thermal Resistance, Junction to Case, Max.
1.25
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
62.5
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
1
Unit
oC/W
40
www.fairchildsemi.com
FQB27P06 — P-Channel QFET® MOSFET
October 2013
Device Marking
FQB27P06
Device
FQB27P06TM
Elerical Characteristics
Symbol
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
-60
--
--
V
--
-0.06
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 150°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -13.5 A
--
0.055
0.07
Ω
gFS
Forward Transconductance
VDS = -30 V, ID = -13.5 A
--
12.4
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
1100
1400
pF
--
510
660
pF
--
120
155
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25 Ω
(Note 4)
VDS = -48 V, ID = -27 A,
VGS = -10 V
(Note 4)
--
18
45
ns
--
185
380
ns
--
30
70
ns
--
90
190
ns
--
33
43
nC
--
6.8
--
nC
--
18
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-27
ISM
--
--
-108
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -27 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/µs
--
105
--
ns
--
0.41
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
2
www.fairchildsemi.com
FQB27P06 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
2
2
10
10
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
1
10
1
10
-I D , Drain Current [A]
-I D, Drain Current [A]
Top :
0
175℃
25℃
0
10
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
10
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.24
2
10
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
0.20
0.16
VGS = - 10V
0.12
VGS = - 20V
0.08
0.04
※ Note : TJ = 25℃
0.00
1
10
0
10
175℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
10
20
30
40
50
60
70
80
90
10
100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
-V GS , Gate-Source Voltage [V]
2500
Coss
2000
Capacitance [pF]
25℃
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1500
1000
Crss
500
0
-1
10
VDS = -30V
8
VDS = -48V
6
4
2
※ Note : ID = -27 A
0
0
10
1
0
10
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQB27P06 — P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -13.5 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
Operation in This Area
is Limited by R DS(on)
25
2
100 µs
1 ms
-I D, Drain Current [A]
-I D, Drain Current [A]
10
10 ms
1
DC
10
0
10
※ Notes :
o
1. TC = 25 C
20
15
10
5
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
ZJC(t), Thermal Response [oC/W]
Figure 9. Maximum Safe Operating Area
10
75
100
125
150
175
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C ( t ) = 1 . 2 5 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
0 .0 1
10
t1
t2
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
4
www.fairchildsemi.com
FQB27P06 — P-Channel QFET® MOSFET
Typical Characteristics
FQB27P06 — P-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
IG = const.
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
td(on)
VDD
VGS
VGS
t off
tr
td(off)
tf
10%
DUT
VGS
-10V
VDS
90%
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VGS
-10V
VDD
VDD
VDS (t)
ID (t)
DUT
IAS
BVDSS
tp
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
Time
5
www.fairchildsemi.com
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
6
www.fairchildsemi.com
FQB27P06 — P-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB27P06 — P-Channel QFET® MOSFET
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 16. 2LD,TO263, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimension in Millimeters
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C1
8
www.fairchildsemi.com
FQB27P06 — P-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
F-PFS™
AccuPower™
®
FRFET®
AX-CAP®*
®*
®
SM
BitSiC™
Global Power Resource
PowerTrench
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyBuck®
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyCalc™
QS™
Gmax™
CROSSVOLT™
TinyLogic®
Quiet Series™
GTO™
CTL™
TINYOPTO™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPower™
ISOPLANAR™
DEUXPEED®
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
SuperSOT™-3
mWSaver
FACT®
UniFET™
SuperSOT™-6
OptoHiT™
FAST®
VCX™
SuperSOT™-8
OPTOLOGIC®
FastvCore™
VisualMax™
OPTOPLANAR®
SupreMOS®
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™