FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ Features Description • 600 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Solar Inverter • Lighting • AC-DC Power Supply D G G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter FCPF11N60F 600 ID Drain Current IDM Drain Current VGSS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) - Continuous (TC = 25oC) 11* - Continuous (TC = 100oC) - Pulsed Unit V A 7* (Note 1) 33* A ±30 V 340 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL - Derate Above 25oC 36 W 0.29 W/oC -55 to +150 oC 300 oC * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FCPF11N60F RθJC Thermal Resistance, Junction to Case, Max. 3.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 1 Unit o C/W oC/W www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET November 2013 Device Marking FCPF11N60F Device FCPF11N60F Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 250 μA, TC = 25oC 600 - - V VGS = 0 V, ID = 250 μA, TC = 150oC - 650 - V ID = 250 μA, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 11 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 3.0 - 5.0 V - 0.32 0.38 Ω - 6 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 5.5 A VDS = 40 V, ID = 5.5 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge - 1148 1490 pF - 671 870 pF - 63 82 pF - 35 - pF VDS = 0 V to 400 V, VGS = 0 V - 95 - pF VDS = 480 V, ID = 11 A, VGS = 10 V - 40 52 nC - 7.2 - nC - 21 - nC VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4) - 34 80 ns - 98 205 ns - 119 250 ns - 56 120 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 11 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 33 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 11 A - - 1.4 V trr Reverse Recovery Time - 120 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 11 A, dIF/dt = 100 A/μs - 0.8 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 11 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 2 www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 1 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250 μs Pulse Test o 2. TC = 25 C -1 10 10 o 150 C o o 25 C 0 10 -55 C * Note 1. VDS = 40V 2. 250 μs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 0.2 1 10 0 10 o o 150 C 25 C * Notes : 1. VGS = 0V 2. 250 μs Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 -1 10 40 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Capacitance [pF] 1.4 1.6 VDS = 100V 4000 Coss 3000 0 -1 10 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5000 1000 1.0 Figure 6. Gate Charge Characteristics 6000 2000 0.8 VSD , Source-Drain Voltage [V] * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss 0 10 1 6 4 2 * Note : ID = 11A 0 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 VDS = 400V 8 0 10 VDS = 250V 10 3 www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 100 150 200 o Figure 9. Safe Operating Area 10 50 TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 12.5 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 10.0 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC * Notes : o 1. TC = 25 C -1 10 -2 0 10 5.0 2.5 o 2. TJ = 150 C 3. Single Pulse 10 7.5 1 2 10 0.0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 o TC, Case Temperature [ C] D = 0 .5 10 0 0 .2 0 .1 * N o te s : o 1 . Z θ J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 5 10 -1 0 .0 2 0 .0 1 θJC o ZθJC Thermal Response Z (t),(t), Thermal Response[ C/W] Figure 11. Transient Thermal Response Curve PDM t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 4 www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET Typical Performance Characteristics (Continued) 50KΩ 200nF 12V FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 5 www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 6 www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FCPF11N60F Rev. C1 8 www.fairchildsemi.com FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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