QS6M4 Transistors Small switching QS6M4 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET (6) (5) (4) ∗1 ∗2 ∗2 zPackaging specifications Package Taping ∗1 TR Code Type 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.16 zFeatures 1) The QS6M4 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET have a low on-state resistance with a fast switching. 3) Pch Trench MOSFET is neucted a low voltage drive (2.5V). 3000 Basic ordering unit (pieces) (1) QS6M4 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Nchannel Pchannel 30 −20 12 −12 ±1.5 ±1.5 ±6.0 ±6.0 0.8 −0.75 6.0 −6.0 1.25 150 −55 to +150 Unit V V A A A A W °C °C ∗ ∗ ∗ Pw≤10µs, Duty cycle≤1% zThermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-a) Limits 100 Unit °C / W 1/5 QS6M4 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 1.0 − − − − − − − − − − Typ. Max. − − − − 170 180 260 − 80 25 15 7 18 15 15 1.6 0.5 0.9 10 − 1 1.5 230 245 360 − − − − − − − − − − − Typ. − Max. 1.2 Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V / VDS=0V ID=1mA / VGS=0V VDS=30V / VGS=0V VDS=10V / ID=1mA ID=1.5A / VGS=4.5V ID=1.5A / VGS=4.0V ID=1.0A / VGS=2.5V VDS=10V / ID=1.0A VDS=10V VGS=0V f=1MHz ID=1A, VDD 15V VGS=4.5V RL=15Ω / RG=10Ω VDD 15V VGS=4.5V ID=1.5A RL=10Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-Drain) Parameter Forward voltage Symbol VSD ∗ Min. − Unit V Conditions IS=3.2A / VGS=0V ∗Pulsed 2/5 QS6M4 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − ∗ Static drain-source on-state − RDS (on) resistance − Yfs ∗ 1.0 Forward transfer admittance − Input capacitance Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 155 170 310 − 270 40 35 10 12 45 20 3.0 0.8 0.85 −10 − −1 −2.0 215 235 430 − − − − − − − − − − − Typ. − Max. −1.2 Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= −12V / VDS=0V ID= −1mA / VGS=0V VDS= −20V / VGS=0V VDS= −10V / ID=−1mA ID= −1.5A / VGS= −4.5V ID= −1.5A / VGS= −4.0V ID= −0.75A / VGS= −2.5V VDS= −10V / ID= −0.75A VDS= −10V VGS=0V f=1MHz ID= −0.75A, VDD −15V VGS= −4.5V RL=20Ω / RG=10Ω VDD −15V RL=10Ω VGS= −4.5V RG=10Ω ID= −1.5A ∗Pulsed zBody diode characteristics (Source-Drain) Parameter Forward voltage Symbol VSD ∗ Min. − Unit V Conditions IS= −0.75A / VGS=0V ∗Pulsed 3/5 QS6M4 Transistors N-ch zElectrical characteristic curves 1000 Ciss Crss Coss 10 0.1 1 10 td (off) 10 td (on) tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : VDS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 1 10 1.0 1.5 10 0.8 ID=1.5A 0.7 2.0 Fig.3 Dynamic Input Characteristics VGS=0V Pulsed ID=0.75A 0.6 0.5 0.4 0.3 0.2 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.5 10 1 VGS=4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.1 1 10 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.5 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.1 0.01 0 Ta=25°C Pulsed 0.9 Fig.4 Typical Transfer Characteristics 1 0 10 1.0 GATE-SOURCE VOLTAGE : VGS (V) 10 1 Fig.2 Switching Characteristics VDS=10V Pulsed 1 2 DRAIN CURRENT : ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 3 SOURCE CURRENT : Is (A) 1 0.01 tf 100 Ta=25°C VDD=15V 5 ID=1.5A RG=10Ω Pulsed 4 Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 6 Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 10 1 0.1 0.01 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 10 4/5 QS6M4 Transistors P-ch zElectrical characteristic curves 1000 Ciss 100 Coss Crss 1 10 td (off) td (on) 10 tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.01 500 400 ID= −1.5A ID= −0.75A 300 200 100 0 0 2 4 6 8 10 12 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 1 0 10 10000 1000 1.0 1.5 2.0 2.5 3.0 3.5 Ta=25°C VGS=0V Pulsed 1 0.1 0.01 0.0 0.5 1.0 1.5 2.0 Fig.6 Source Current vs. Source-Drain Voltage VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.5 SOURCE-DRAIN VOLTAGE : −VSD (V) 100 10 0.1 0 10 Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics 1000 2 Fig.3 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : −VGS (V) 10000 3 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : −VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 4 Fig.2 Switching Characteristics VDS= −10V Pulsed 1 10 5 DRAIN CURRENT : −ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 6 SOURCE CURRENT : −IS (A) 0.1 tf 100 Ta=25°C VDD= −15V ID= −1.5A RG=10Ω Pulsed 7 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 0.01 8 Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 10 10000 1000 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 10 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0