ROHM 2SD1863

Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Dimensions (Unit : mm)
2SD1898
1.5 ±0.1
2.5+0.2
−0.1
4.0±0.3
0.5±0.1
4.5+0.2
−0.1
1.6±0.1
(1)
1.0±0.2
Features
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
0.4±0.1
1.5±0.1
(2)
(3)
0.5±0.1
+0.1
0.4−0.05
0.4±0.1
1.5±0.1
3.0±0.2
Structure
Epitaxial planer type
NPN silicon transistor
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : DF
2SD1733
2SD1768S
0.65±0.1
0.75
2±0.2
3Min.
3±0.2
(15Min.)
9.5±0.5
0.5±0.1
2.5
0.9
2.3+−0.2
0.1
C0.5
1.5
1.5±0.3
5.5+−0.3
0.1
4±0.2
6.5±0.2
5.1+−0.2
0.1
0.45+0.15
−0.05
0.9
0.55±0.1
2.3±0.2 2.3±0.2
1.0±0.2
5
2.5 +0.4
−0.1
0.5
+0.15
0.45 −0.05
(1) (2) (3)
(1) (2) (3)
Taping specifications
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
2.5±0.2
0.65Max.
0.5±0.1
(1)
(2)
4.4±0.2
14.5±0.5
1.0
0.9
6.8±0.2
(3)
2.54 2.54
1.05
0.45±0.1
Taping specifications
ROHM : ATV
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/3
(1) Emitter
(2) Collector
(3) Base
2011.05 - Rev.D
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Data Sheet
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Parameter
Collector current
1
IC
A (DC)
A (Pulse) ∗1
2
2SD1898
Collector power
dissipation
2SD1733
PC
2SD1768S
0.5
W
2
W
1
W
10
W (Tc=25°C)
0.3
W
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2SD1863
∗3
∗2
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
∗3 When mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
120
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
80
−
−
V
IC=1mA
Emitter-base breakdown voltage
Conditions
BVEBO
5
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
1
μA
VCB=100V
Emitter cutoff current
IEBO
−
−
1
μA
VEB=4V
2SD1863
DC current
2SD1733, 2SD1898
transfer ratio
2SD1768S
120
−
390
−
hFE
120
−
390
−
120
−
390
−
Collector-emitter saturation voltage
VCE(sat)
−
0.15
0.4
V
Transition frequency
fT
−
100
−
MHz
Output capacitance
Cob
−
20
−
pF
∗
VCE=3V, IC=0.5A
IC/IB=500mA/20mA
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current
Packaging specifications and hFE
Package
Taping
Code
T100
TL
TP
TV2
Basic ordering unit (pieces)
1000
2500
5000
2500
−
−
−
−
−
Type
hFE
2SD1898
QR
2SD1733
QR
−
2SD1768S
QR
−
−
2SD1863
QR
−
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
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2/3
2011.05 - Rev.D
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Data Sheet
Electrical characteristic curves
Ta=25°C
100
10
1
5mA
0.8
4mA
3mA
0.6
2mA
0.4
1mA
0
0
2
IC/IB=20/1
0.1
10/1
0.05
0.02
0.01
0
10
100
Ta=25°C
VCE=5V
50
20
10
5
2
1
2
Fig.5 Gain bandwidth product vs.
emitter current
5 10 20 50100 200 5001000
Fig.7 Safe operating area
(2SD1863)
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c 2011 ROHM Co., Ltd. All rights reserved.
○
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
DC
Fig.3 DC current gain vs.
collector current
1000
Ta=25°C
f=1MHz
IE=0A
Ic=0A
100
10
1
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
200m
S
2m
1m
0.1 0.2 0.5 1 2
1
Ic Max (Pulse)
500m
1000
Ta=25°C
Single
non-repetitive
pulse
5
2
100
m
5m
10
10
COLLECTOR CURRENT : IC (mA)
S
0m
10m
50 100 200 500 1000
00
S
20m
0
0
=1
m
100m
50m
20
=1
S
00
200m
10
Pw
0m
=1
500m
5
EMITTER CURRENT : −IE (mA)
Pw
=1
DC
Pw
1
Pw
2
Ic Max (Pulse)
IB=0mA
10
100
1000
Ta=25°C
Single
non-repetitive
pulse
8
200
Fig.4 Collector-emitter saturation
voltage vs. collector current
5
6
500
COLLECTOR CURRENT : IC (mA)
10
4
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
0.2
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0.5
100
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
1.0
VCE=3V
1V
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
2.0
1000
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Ta=25°C
Ta=25°C
6mA
1.0
DC CURRENT GAIN : hFE
Ta=25°C
VCE=5V
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (mA)
1000
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5 1
2
5 10 20 50100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
(2SD1898)
3/3
2011.05 - Rev.D
Notice
Notes
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R1120A