Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Dimensions (Unit : mm) 0.9 0.65Max. 0.9 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 1.5 2.5 9.5±0.5 0.5±0.1 0.65±0.1 0.75 2.5±0.2 6.8±0.2 2.3 +0.2 −0.1 4.4±0.2 C0.5 0.9 Structure Epitaxial planar type NPN silicon transistor 2SD1864 6.5±0.2 5.1 +0.2 −0.1 5.5 +0.3 −0.1 1.5±0.3 2SD1760 1.0 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. (3) 2.54 2.54 1.05 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC Collector current Collector power dissipation 2SD1760 2SD1864 3 A (DC) 4.5 A (Pulse) W (Tc=25°C)∗2 15 PC ∗1 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50μA Collector cutoff current ICBO − − 1 μA VCB=40V Emitter cutoff current IEBO − − 1 μA VEB=4V VCE (sat) − 0.5 1 V IC/IB=2A/0.2A ∗ hFE 120 − 390 − VCE=3V, IC=0.5A ∗ Transition frequency fT − 90 − MHz VCE=5V, IE=−500mA, f=30MHz ∗ Output capacitance Cob − 40 − pF Parameter Collector-emitter saturation voltage DC current transfer ratio Conditions VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.A 2SD1760 / 2SD1864 Data Sheet Packaging specifications and hFE Package Taping Code Basic ordering unit (pieces) Type hFE 2SD1760 QR 2SD1864 QR TL TV2 2500 2500 − − hFE values are classified as follows: Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 Ta = 100°C 25°C −25°C 1 0.5 0.2 0.1 0.05 45mA 2.5 3.0 40mA 35mA 30mA 25mA 20mA Ta = 25°C VCE = 3V 5 50mA COLLECTOR CURRENT : IC (A) 3.0 10 2.0 15mA 1.5 10mA 1.0 5mA 0.5 50mA 45mA 40mA 35mA 30mA 25mA 2.5 Ta = 25°C 20mA 2.0 15mA 1.5 10mA 1.0 IB = 5mA 0.5 PC = 15W 0.02 0.01 0 IB = 0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 2 3 4 0 0 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) 10 20 30 40 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded-emitter output characteristics( ΙΙ ) 1000 1000 10 Ta = 25°C VCE = 5V 100 50 3V 20 10 5 Ta = 100°C 200 100 50 25°C −25°C 20 10 5 2 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1 0.01 0.02 0.05 0.1 0.2 10 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) 1000 lC/lB = 10 2 0.5 Ta = −25°C 25°C 0.2 0.1 Ta = 100°C 0.05 0.02 100°C VBE (sat) −25°C 25°C VCE (sat) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 2 5 10 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Ta = 25°C VCE = 5V 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 5001000 EMITTER CURRENT : −IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/3 20 10 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. collector curren( ΙΙ ) 5 1 1 Ta = 25°C 5 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current( Ι ) 10 0.5 Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 200 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE VCE = 3V 500 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 Grounded emitter propagation characteristics 1000 Ta = 25°C f = 1MHz IE = 0A 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage 2009.12 - Rev.A Data Sheet 0.1 0.05 0.02 Ta = 25°C ∗Single pulse 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSIENT THERMAL RESISTANCE : Rt h (°C/W) Fig.10 Safe operating area (2SD1760) COLLECTOR CURRENT : IC (A) DC 0.2 10 1 0.1 1 10 100 1sec 10sec 100sec TIME : T (ms) Fig.11 Transient thermal resistance (2SD1760) 2 1 DC 0.5 100 s 0m s =1 m 00 =1 1 Pw PW s∗ 0m ∗ =1 ms 00 =1 2 5 VCE=5v IC=0.2A Pw PW COLLECTOR CURRENT : IC (A) 5 TRANSIENT THERMAL RESISTANCE : Rth (°C/W) 2SD1760 / 2SD1864 0.5 0.2 0.1 0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Safe operating area (2SD1864) 100 10 1 0.1 1 10 100 1 10sec 100sec 1000sec TIME : T (ms) Fig.13 Transient thermal resistance (2SD1864) www.rohm.com c 2009 ROHM Co., Ltd. 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