NPN General Purpose Transistor PN2222A NPN General Purpose Transistor Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA Absolute Maximum Ratings (Tamb=25°C unless otherwise noted) Parameter Symbol Value Units Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 75 V Emitter-Base Voltage VEBO 6 V IC 1.0 A TSTG -55～ 150 °C Collector Current Storage Temperature Caution: 1. These ratings are based on a maximum junction temperature of 150°C 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-247-2232 Fax: (800)-TAITFAX (800)-TAITRON (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/WW Page 1 of 6 NPN General Purpose Transistor PN2222A Electrical Characteristics (Tamb=25°C Parameter unless otherwise noted) Test Condition Symbol Min. Max. Unit Collector-Base Breakdown Voltage IC=10uA, IE=0 BVCBO 75 V Collector-Emitter Breakdown Voltage * IC=10mA, IB=0 BVCEO 40 V Emitter-Base Breakdown Voltage IE=10uA,IC=0 BVEBO 6 V Collector Cut-off Current VCB=60V,IE=0 ICBO 0.01 uA Emitter Cut-off Current VEB=3V,IC=0 IEBO 10 nA Off Characteristics On Characteristics 35 50 VCE=10V, IC =0.1mA VCE =10V, IC =1mA VCE =10V *, IC =10mA (Tamb=-55°C) VCE =10V *, IC =150mA VCE =10V *, IC =500mA hFE Collector- Emitter Saturation Voltage * IC =150mA,IB=15mA IC =500mA,IB=50mA VCE(sat) Base-Emitter Saturation Voltage * IC =150mA, IB =15mA IC =500mA, IB =50mA VBE(sat) 0.6 IC=20mA, VCE=20V, f=100MHz fT 300 Output Capacitance VCB=10V, IE=0, f=1MHz Cobo 8.0 pF Input Capacitance VEB=0.5V, IC =0, f=1MHz Cibo 25 pF Collector Base Time Constant IC =20mA, VCB=20V, f=31.8MHz rb’Cc 150 pS Noise Figure IC =100uA, VCE=10V Rs=1.0kΩ, f=1.0KHz NF 4.0 dB Real Part of Common-Emitter High Frequency Input Impedance IC =20mA, VCE=20V, f=300MHz Re(hie) 60 Ω VCC=30V, VEB(off)=0.5V IC=150mA, IB1=15mA td 10 ns tr 25 ns VCC=30V, IC=150mA IB1=IB2=15mA ts 225 ns tf 60 ns DC Current Gain 75 100 40 300 0.3 1 V 1.2 2 V * Pulse Test: Pulse Width≤300us, Duty Cycle≤2.0% Small Signal Characteristics Current Gain Bandwidth Product MHz Switching Characteristics Delay Time Rise Time Storage Time Fall Time Rev. A/WW www.taitroncomponents.com Page 2 of 6 NPN General Purpose Transistor PN2222A Thermal Characteristics Total Device Dissipation Derate above 25°C PD 625 5.0 mW mW/°C Thermal Resistance, Junction to case RθJC 83.3 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W Dimensions (Unit:mm) Rev. A/WW www.taitroncomponents.com Page 3 of 6 NPN General Purpose Transistor PN2222A Typical Characteristics Curves Rev. A/WW www.taitroncomponents.com Page 4 of 6 NPN General Purpose Transistor PN2222A Rev. A/WW www.taitroncomponents.com Page 5 of 6 NPN General Purpose Transistor PN2222A How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONETS INCORPORATED E REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE CROSS REGION PLAZA, 899 LINGLING ROAD, SUITE 18C, SHANGHAI, 200030, CHINA Tel: +86-21-54249942 Fax: +86-21-5424-9931 Rev. A/WW www.taitroncomponents.com Page 6 of 6