Y6N02 WF WFY 20V N−Channel MOSFET Features ■ 6A, 20V, RDS(on)(Max 40mΩ)@VGS=4.5V ■ 1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated ■ RoHS compliant al De scription Gener Genera Des D This MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load switching and PA switching. S G T-23 SO SOT s(Tc=25℃ unless otherwise noted) Absolute Maximum Rating Ratings Symbol Value Units VDSS Drain Source Voltage Parameter 20 V ID Continuous Drain Current 6 A IDM Drain Current Pulsed 20 A PD Total Power Dissipation(Note 1) 0.3 W VGS Gate to Source Voltage ±12 V TJ, Tstg Junction and Storage Temperature -55~150 ℃ TL Maximum lead Temperature for soldering purposes 260 ℃ Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. cterist Thermal Chara Charac teristiics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min Typ Max - - 170 110 300 Units ℃/W ℃/W ℃/W Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Mounted on a ceramic board (1000mm2×0.8mm) 1units) Note 2: Surface−mounted on FR4 board using the minimum recommended pad size. Rev. A Mar.2010-H04F Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. P12-3 Y6N02 WF WFY cterist Electrical Chara Charac teristiics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current(Note 4) IGSS VGS = ±10 V, VDS = 0 V - - ±100 nA Drain cut−off current(Note 4) IDSS VDS = 16 V, VGS = 0 V - - -1 μA V(BR)DSS ID = 250 μA, VGS = 0 V 20 - - V VGS(th) VDS = VDS ID =-250 μA 0.5 - 1.0 V - 32 40 VGS = 2.5 V, ID = 2.0 A 40 55 VGS = 1.8 V, ID = 1.0 A 65 110 Drain−source breakdown voltage Gate threshold voltage VGS = 4.5 V, ID = 3A Drain−source ON resistance RDS(ON) Forward Transconductance gfs VDS = 5.0 V, ID = 2.8 A - 6.5 - Input capacitance Ciss VDS =10 V, - 430 - Reverse transfer capacitance Crss VGS = 0 V, - 90 - Coss f = 1 MHz - 110 - Turn-on Delay time td(on) VGS =4.5 V, - 5 10 Turn−on Rise time tr VDS =10V, - 15 28 Turn-off Delay time td(off) ID = - 26 48 RG = 6 Ω, RL=10 Ω - 15 28 Qg VGS =4.5V, - 6 8 Gate−source charge Qgs VDS =10V, - 0.7 - Gate−drain (“miller”) Charge Qgd ID = 6 A - 3 - Output capacitance mΩ S pF Switching time ns 1.0 A, (Note 5) Turn−off Fall time Total gate charge tf nC e−Drain Ratings and Characteristics (Ta = 25°C) Sourc Source Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 6 A Pulse drain reverse current IDRP - - - 20 A Forward voltage (diode) VDSF - 0.7 1.3 V IDR = 1A, VGS = 0 V Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/6 Steady, keep you advance Y6N02 WF WFY FFiigg.. 11 OOnn--SSttaattee CChhaarraacctteerriissttiiccss FFiigg..33 OOnn−−RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt FFiigg..22 TTrraannssffeerr CCuurrrreenntt CChhaarraacctteerriissttiiccss FFiigg..44 DDiiooddee FFoorrwwaarrdd VVoollttaaggee vvss.. CCuurrrreenntt - FFiigg..55 OOnn--RReessiissttaannccee VVaarriiaattiioonn vvss JJuunnccttiioonn TTeemmppeerraattuurree FFiigg..66 GGaattee CChhaarrggee CChhaarraacctteerriissttiiccss 3/6 Steady, keep you advance Y6N02 WF WFY FFiigg..99 SSiinnggllee PPuullssee PPoowweerr 4/6 Steady, keep you advance Y6N02 WF WFY sistive Switching Test & Wavefor ms Re Res aveform 5/6 Steady, keep you advance Y6N02 WF WFY T-2 3 Pac kage Dimension SO SOT -23 Pack DIM A A1 B C D E F G H I J MILL MILLIIMTERS MIN INCHES MAX MIN 0.95 1.90 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 50o MAX 0.037 0.074 3.00 1.70 3.10 1.30 0.10 0.50 0.20 0.60 10o 0.102 0.055 0.110 0.039 0.000 0.014 0.004 0.012 50o 0.118 0.067 0.122 0.051 0.004 0.020 0.008 0.024 10o 6/6 Steady, keep you advance