RB215T-40 Diodes Schottky barrier diode RB215T-40 zExternal dimensions (Unit : mm) zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 13.5MIN 1.2 zConstruction Silicon epitaxial planar 8.0±0.2 12.0±0.2 5.0±0.2 ① 15.0±0.4 0.2 8.0 10.0±0.3 0.1 zFeatures 1) Cathode common dual type. (TO-220) 2) Low IR 3) High reliability 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter Forward voltage (repetitive peak) Forward voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ 45 40 20 100 150 -40 to +150 (*1)Tc=100℃max Per chip : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.55 500 1.75 Unit V µA ℃/W Conditions IF=10A VR=40V junction to case Rev.C 1/3 RB215T-40 Diodes zElectrical characteristic curves 1000000 REVERSE CURRENT:IR(uA) Ta=125℃ 1 Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 Ta=150℃ f=1MHz 1000 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 1 100 10 0.1 100 200 300 400 500 1 0 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 30 Ta=25℃ IF=3A n=30pcs 480 470 460 AVE:472.9mV 700 600 500 400 300 AVE:78.7uA 200 150 100 50 AVE:176.0A RESERVE RECOVERY TIME:trr(ns) 8.3ms 200 2520 2510 2500 2490 2480 2470 2460 0 2450 AVE:2515.6pF Ct DISPERSION MAP 1000 30 1cyc 25 AVE:27.4ns 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 Ifsm 8.3ms 8.3ms 1cyc 100 0 0 10 1 trr DISPERSION MAP IFSM DISRESION MAP 100 t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 IM=100mA 1ms 10 IF=10A time Rth(j-a) 300us Mounted on epoxy board Rth(j-c) 1 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 30 Ta=25℃ f=1MHz VR=0V n=10pcs 2530 IR DISPERSION MAP Ifsm 20 2540 100 VF DISPERSION MAP 300 10 2550 800 450 250 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=40V n=30pcs 900 REVERSE CURRENT:IR(uA) 490 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 500 35 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:VF(mV) 10000 100000 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 20 D=1/2 DC Sin(θ＝180) 10 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.C 40 2/3 RB215T-40 Diodes 10 6 D=1/2 DC 4 Sin(θ＝180) 2 0 0A 0V 40 D=1/2 DC t T 30 VR D=t/T VR=20V Tj=150℃ 20 10 Sin(θ＝180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 REVERSE POWER DISSIPATION:PR (W) 50 50 40 D=1/2 Io t DC T VR D=t/T VR=20V Tj=150℃ 30 20 10 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVE:25.7kV 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1