Formosa MS High Voltage SMD NPN Transistor FMBT5550 / FMBT5551 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Formosa MS High Voltage SMD NPN Transistor FMBT5550 / FMBT5551 600mA Silicon NPN Epitaxial Planar Transistor Package outline • High collector-emitterbreakdien voltage. (B) 0.012 (0.30) 0.020 (0.50) 0.045 (1.15) .084(2.10) .068(1.70) • 0.110 (2.80) • • SOT-23 0.120 (3.04) • (BV CEO = 140V~ 160V@I C=1mA) This device is designed for general purpose high voltage amplifiers and gas discharge display driving . Epitaxial planar die construction . Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.FMBT5550-H. 0.034 (0.85) Features (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.051 (1.30) 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) Mechanical data 0.035 (0.89) MIL-STD-750, Method 2026 Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.008 gram Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol FMBT5550 FMBT5551 Collector-Base voltage V CBO 160 180 UNIT Vdc Collector-Emitter voltage V CEO 140 160 Vdc Emitter-Base voltage V EBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Thermal Characteristics Symbol Maximum Total device dissipation FR-5 board T A = 25 C (1) Derate above 25 OC PD 225 mW 1.8 mW/ OC Thermal resistance R θJA 556 PD 300 mW 2.4 mW/ OC Characteristics O Junction to ambient O Total device dissipation alumina substrate(2) T A = 25 C Thermal resistance Junction to ambient Derate above 25 OC R θJA Operating junction temperature range Storage temperature range UNIT O O 417 C/W C/W TJ -55 ~ +150 o C T STG -55 ~ +150 o C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Formosa MS High Voltage SMD NPN Transistor FMBT5550 / FMBT5551 Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Collector-Base breakdown voltage Collector-Emitter breakdown voltage(3) Emitter-Base breakdown voltage CONDITIONS Symbol I C = 100µA dc , I E = 0 V (BR)CBO I C = 1.0mA dc , I B = 0 V (BR)CEO V (BR)EBO I E = 10µA dc , I C = 0 V CB = 100V dc , I E = 0 V CB = 120V dc , I E = 0 Collector cutoff current V CB = 100V dc , I E = 0, T J = 100 OC I CBO O V CB = 120V dc , I E = 0, T J = 100 C Emitter cutoff current I EBO V EB = 4.0V dc , I C = 0 Types Max. Min. FMBT5550 160 - FMBT5551 180 - FMBT5550 140 - FMBT5551 160 - Both Types 6.0 - FMBT5550 - 100 FMBT5551 - 50 FMBT5550 - 100 FMBT5551 - 50 Both Types - 50 UNIT Vdc Vdc Vdc nAdc µAdc nAdc On characteristics PARAMETER CONDITIONS Symbol I C = 1.0mA dc , V CE = 5.0V dc DC current gain I C = 10mA dc , V CE = 5.0V dc h FE I C = 50mA dc , V CE = 10V dc I C = 10mA dc , I B = 1.0mA dc Collector-Emitter saturation voltage Base-Emitter saturation voltage V CE(sat) I C = 50mA dc , I B = 5.0mA dc I C= 10mA dc , I B = 1.0mA dc V BE(sat) I C = 50mA dc , I B = 5.0mA dc Collector Emitter Cut-off V CB= 10V I CES V CB= 75V Types Min. Max. FMBT5550 60 - FMBT5551 80 - FMBT5550 60 250 FMBT5551 80 250 FMBT5550 20 - FMBT5551 30 - Both Types - 0.15 FMBT5550 - 0.25 FMBT5551 - 0.20 Both Types - 1.0 FMBT5550 - 1.2 FMBT5551 - 1.0 - 50 - 100 Both Types UNIT - Vdc Vdc nA 3.Pulse test : pukse width < 300us, duty cycle < 2.0%. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Rating and characteristic curves (FMBT5550/FMBT5551) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Rating and characteristic curves (FMBT5550/FMBT5551) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Formosa MS High Voltage SMD NPN Transistor FMBT5550 / FMBT5551 Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code FMBT5550 FMBT5551 M1F G1 Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Formosa MS High Voltage SMD NPN Transistor FMBT5550 / FMBT5551 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8 Formosa MS High Voltage SMD NPN Transistor FMBT5550 / FMBT5551 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 383*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date DS-231108 2008/02/10 Revised Date 2011/07/21 Revision Page. C 8