Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2,3 Switching time equivalent test circuits................................................ 4 Rating and characteristic curves........................................................ 4, 5, 6 Pinning information........................................................................... 7 Marking........................................................................................... 7 Suggested solder pad layout............................................................. 7 Packing information.......................................................................... 8 Reel packing.................................................................................... 9 Suggested thermal profiles for soldering processes............................. 9 High reliability test capabilities.......................................................... 10 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 200mA Silicon PNP Epitaxial Planar Transistor Package outline SOT-363 Features .087(2.20) .079(2.00) • High collector-emitterbreakdien voltage. (BV CEO = -40V@I C=-1.0mA) .018(0.46) .010(0.26) • • • • stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Offer PNP+ PNP in one package recommended Capable of 150mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.FMBT3906DW1-H .087(2.20) .079(2.00) • Small load switch transistor with high gain and low .053(1.35) .045(1.15) .026(0.65)Typ. .010(0.25) .003(0.08) .014(0.35) .006(0.15) .004(0.10) Max. .043(1.10) .035(0.90) Mechanical data .016(0.40) .012(0.30) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-363 • Terminals : Solder plated, solderable per Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 3 • Polarity : See Diagram • Mounting Position : Any • Weight : Approximated 0.006 gram 2 Q 1 Q 4 5 6 Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -40 V Emitter-Base voltage V EBO -5.0 V Collector current IC -200 mA Total device dissipation FR-5 board T A = 25 OC (1) PD 150 mW Thermal resistance R θJA 833 Junction to ambient Operating temperature Storage temperature TJ -55 +150 T STG -65 +150 O C/W o C 1.FR-5 = 1.0 X 0.75 X0.062 in. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 Characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Symbol MIN. Collector-Base breakdown voltage I c = -10uA, I E = 0 CONDITIONS V (BR)CBO -40 TYP. MAX. UNIT V Collector-Emitter breakdown voltage(3) I c = -1mA, I B = 0 V (BR)CEO -40 V Emitter-Base breakdown voltage I c = -10uA, I C = 0 V (BR)EBO -5.0 V Base cutoff current V CE = -30Vdc, V EB = -3.0Vdc I BL -50 Collector cutoff current V CE = -30Vdc, V EB = -3.0Vdc I CEX -50 nA On characteristics(3) PARAMETER CONDITIONS Symbol h FE I c = -10mA, V CE = -1.0V Collector-Emitter saturation voltage(3) TYP. 100 I c = -50mA, V CE = -1.0V 60 I c = -100mA, V CE = -1.0V 30 I c = -10mA, I B = -1.0mA 300 -0.25 V CE(sat) - Vdc -0.40 I c = -50mA, I B = -5.0mA Base-Emitter saturation voltage(3) MAX. UNIT 80 I c = -1.0mA, V CE = -1.0V DC current gain MIN. 60 I c = -0.1mA, V CE = -1.0V I c = -10mA, I B = -1.0mA V BE(sat) -0.65 -0.85 Vdc -0.95 I c = -50mA, I B = -5.0mA 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. Small-signal characteristics PARAMETER CONDITIONS Current-gain-bandwidth product(4) I C = -10mA, V CE = -20V, f = 100MHz Symbol MIN. fT 250 TYP. MAX. UNIT MHz C obo 4.5 Vdc pF V EB = -0.5V, I C = 0, f = 1.0MHz C ibo 1.0 pF Input impedance V CE = -10A, I C = -1.0mA, f = 1.0KHz h ie 2.0 12 Vdc kohms Voltage feeback radio V CE = -10V, I C = -1.0mA, f = 1.0KHz h re 0.1 10.0 X 10 -4 Small-signal current gain V CE = -10V, I C = -1.0mA, f = 1.0KHz h fe 100 400 - 3.0 60 umhos Output capacitance V CB = -5.0V, I E = 0, f = 1.0MHz Input capacitance Output admittance V CE = -10V, I C = -1.0mA, f = 1.0KHz h oe Noise figure V CE = -5.0V, I C = -100uA, RS = 1.0K ohms, f = 1.0KHZ NF 4.0 dB 4.f T is defined as the frequency at which h fe extrapolates to unity. Switching characteristics PARAMETER CONDITIONS Delay time Rise time V CC = -3.0V, V BE = 0.5V, I C = -10mA, I B1 = -1.0mA Storage time Fall time V CC = -3.0V, I C =-10mA, I B1 = I B2 = -1.0mA Symbol MIN. TYP. MAX. UNIT 35 td tr 35 ts 225 tf 75 ns 5. Pulse Test: Pulse Width <=300µs, Duty cycle«=2.0% http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Rating and characteristic curves (FMBT3906DW1) 3V 3V +9.1V <1ns 275 275 <1ns 10k +0.5V 10k 0 CS<4 pF 10.6V 300 ns 10<t 1 <500 s DUTY CYCLE=2% CS<4 pF 1N916 t1 10.9V DUTY CYCLE=2% *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure . Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J=125 C 10 5000 7.0 3000 VCC=40V I C/I B =10 2000 5.0 Cobo Q CHARGE (pC) CAPACITANCE (pF) T J=25 C Cibo 3.0 1000 700 500 300 200 2.0 QT QA 100 70 50 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 20 30 50 70 100 200 Figure 4. Charge Data Figure 3. Capacitance 500 500 VCC=40V I B 1=I B 2 300 I C/I B =10 300 200 t f FALL TIME (ns) 200 100 TIME (ns) 5.0 7.0 10 I C COLLECTOR CURRENT (mA) REVERSEM BIAS (VOLTS) 70 t r @VCC=3.0V 50 15V 30 20 40V 2.0V 10 7 5 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C COLLECTOP CURRENT (mA) 30 20 I C/I B =10 7 5 1.0 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C COLLECTYOR CURRENT (mA) Figure 5. Turn-On Time http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 70 50 10 t d @VOB=0V 1.0 I C/I B =20 100 Figure 6.Fall Time Document ID Page 4 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Rating and characteristic curves (FMBT3906DW1) (VCE= -5.0 Vdc, T A= 25 °C, Bandwidth= 1.0Hz) 5.0 12 4.0 SOURCE RESISTANCE=2001/2 I C=0.5 mA 3.0 SOURCE RESISTANCE=2.0 k I C=50 uA 2.0 10 SOURCE RESISTANCE=2.0 k I C=100uA 1.0 I C=100uA 6 4 I C=50 uA 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 f FREQUENCY (kHZ) Rg SOURCE RESISTANCE (k OHMS) Figure 7. Figure 8. 100 (VCE= -10 Vdc, f= 1.0 kHz, T A= 25 °C) h PARAMETERS 100 hoe OUTPUT ADMITTANCE ( mhos) 300 hfe DC CURRENT GAIN 8 2 0 200 100 70 50 30 70 50 30 20 10 7 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 0.1 0.2 I C COLLECTOR CURRENT (mA) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 I C COLLECTOR CURRENT(mA) Figure 10. Input Impedance Figure 9. Current Gain 10 hfe VOLTAGE FEEBACK RATIO (X 10 x4) 20 hfe INPUT IMPEDANCE (k OHMS) I C=0.5mA I C=1.0mA f=1.0 kHz NF NOISE FIGURE (dB) NF NOISE FIGURE (dB) SOURCE RESISTANCE=2001/2 I C=1.0 mA 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 12. Votage Feeback Ratio Figure .11 Input Impedance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 0.2 I C COLLECTOR CURRENT (mA) I C COLLECTOR CURRENT (MA) Document ID Page 5 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 hFE DC CURRENT GAIN (NORMALIZED) Rating and characteristic curves (FMBT3906DW1) TYPICAL STATIC CHARACTERISTICS 2.0 TJ=+125 °C VCE=10V +25 °C 1.0 0.7 -55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C COLLECTOR CURRENT (mA) V CE COLLECTOR EMITTER VOLTAGE (VOLTS) Figurer 13. DC Current Gain 1.0 TJ=25 °C 0.8 I C=1.0mA 30mA 10mA 100mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B BASE CURRENT (mA) 1.0 VBE(sat) @ I C/I B =10 V VOLTAGE (VOLTS) TJ=25 °C 0.8 VBE(sat) @VCE=1.0V 0.6 0.4 VCE(sat) @ I C/I B =10 0.2 0 10 20 50 10 20 50 100 200 θv TEMPERATURE COEFFICIENTS (mV/°C) Figure 14. Collector Saturation Region 1.0 0.5 0 -55 °C TO +25 °C -0.5 +25 °C TO +125 °C -1.0 -55 °C TO +25 °C -1.5 θ VB FOR VBE(sat) -2.0 0 20 40 60 80 100 120 140 160 180 200 I C COLLECTOR CURRENT (mA) I C COLLECTOR CURRENT (mA) Figure 16.Temperature Coefficients Figure 15. "ON" Voltages http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 +25 °C TO +125 °C θ VC FOR VCE(sat) Document ID Page 6 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 Pinning information Pin Simplified outline 3 2 Symbol 1 3 2 1 • FMBT3906DW1 Q 4 5 Q 4 6 5 6 Marking Type number Marking code FMBT3906DW1 A2 Suggested solder pad layout SOT-363 0.025(0.65) 0.025(0.65) 0.051(1.3) 0.075(1.9) 0.098(2.5) 0.024(0.60) 0.0165(0.42) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-363 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.36 2.40 1.20 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 8 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 Reel packing PACKAGE REEL SIZE SOT-363 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 9 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10 Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 High reliability test capabilities Item Test Conditions 1. Steady State Operating Life TA=25°C P D=150mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj= 150℃,V CE=80% related volage, Test Duration: 1000hrs 3. Temperature Cycle 4. Autoclave -55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs 5. High Temperature Storage Life Ta=150℃ Test Duration:1000hrs 6. Solderability 245℃,Test Duration:5sec 7. High Temperature High Humidity Reverse Bias Ta=85℃, 85%RH, V CE= 80% related volage,Test Duration: 1000hrs 8. Resistance to Soldering Heat 260℃, Test Duration: 10sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 10 DS-231113 Issued Date Revised Date 2008/02/10 2010/03/10 Revision Page. B 10