Formosa MS N-Channel Small Signal MOSFET FMSBSS138 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking ........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Formosa MS N-Channel Small Signal MOSFET FMSBSS138 50V N-Channel Small Signal MOSFET Package outline SOT-23 (B) 0.014 (0.35) 0.034 (0.85) 0.020 (0.51) .084(2.10) .068(1.70) 0.124 (3.10) • Low On-Resistance : 3.5 Ω • Low Input Capacitance: 40pF • Low Out put Capacitance : 12pF • Low Threshole :1 .5V • Fast Switching Speed : 20ns • In compliance with EU RoHS 2002/95/EC directives. • Suffix "-H" for Halogen-free part, ex. FMSBSS138-H. 0.108 (2.70) 0.042 (1.05) Features (C) (A) 0.072 (1.80) 0.024 (0.61) 0.012 (0.30) 0.047 (1.19) 0.120 (3.00) 0.059 (1.47) 0.002 (0.05) Mechanical data 0.01 (0.25) 0.084 (2.10) 0.035 (0.88) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram M aximum ratings (AT T o A =25 C unless otherwise noted) PARAMETER CONDITIONS Drain-source voltage Gate-source voltage SYMBOL MAX. UNIT V DSS MIN. TYP. 50 V V GS ±20 V Continuous drain current T A =25 C ID 200 mA Pulsed drain current t P<=10us I DM 800 mA PD 225 mW R θJA 556 o o Maximum power dissipation T A =25 C Thermal resistance Junction to ambient Operation junction and storage temperature range http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 T J , T STG Page 2 -55 o C/W o +150 C Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Formosa MS N-Channel Small Signal MOSFET FMSBSS138 Electrical characteristics (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT STATIC(1) Drain-source breakdown voltage V GS = 0V, I D = 250µA Gate-source threshold voltage V DS = V GS , I D = 1.0mA V (BR)DSS 50 V GS(th) 0.5 V GS = 2.75V, I D < 200mA, TA=-40 °C to + 85 °C V 1.5 5.6 10 R DS(on) Drain-source on-state resistance Ω V GS = 5.0V, I D = 200mA V DS = 25V, V GS = 0V Zero gate voltage drai n current V DS = 50V, V GS = 0V Gate-source leakage current Forward transconductance V V GS = ±20V, V DS = 0V V DS=25V, I D=200mA, f=1.0KHZ 3.5 0.1 I DSS I GSS g fS µA 0.5 ±0. 1 100 µA ms DYNAMIC Input capacitance C iss V DS = 25V, V GS = 0V f = 1.0 MHz Output capacitance Reverse transfer capacitance 40 50 C oss 12 25 C rss 3.5 5.0 pF SWITCHING(2) Turn-On Delay Time V DD = 30V, I D = 200mA t d(on) 20 Turn-Off Delay Time V DD = 30V, I D = 100mA t d(off) 20 ns Note: 1. Pulse Test : PW<=300µs, Duty Cycle<=2% 2. Switching Time is essentially independent of operating temperature. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Rating and characteristic curves (FMSBSS138) Fig2. Transfer Characteristics 0.9 0.7 0.8 Drain Current, ID (Amps) Drain Current, ID (Amps) Fig1. On-Region Characteristics 0.8 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 0 10 0 0.5 2.0 2.5 3.0 3.5 4.0 4.5 VARIANCE, VGS(th) ( Volts ) 1.25 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -55 -5 45 95 1.125 1 0.875 0.75 -55 0.6 145 -30 -5 Junction Temperature, T J (°c) 8 6 4 2 0 500 1000 1500 2000 2500 3000 Total Cate Charge, Q T (pC) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 20 45 70 95 120 145 Junction Temperature, T J (°c) Fig 5. Gate Charge 0 1.5 Fig 4. Threshold Voltage Variation with Temperature Fig 3. On-Resistance Variation with Temperature 2.2 10 Gate-to-Source Voltage, VGS(Volts) 1.0 Gate-to-Source Voltage, V GS (Volts) Drain-to-Source Resistance, RDS(on)(OHMS) Drain to Source Resistance, RDS(on) (NORMALIZED) Drain-to-Source Voltage, V DS (Volts) 10 Fig. 6 On-Resistance vs Drain Current 9 8 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.20 0.25 Drain Current, I D (Amps) Page 4 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Drain-to-Source Resistance, RDS(on)(OHMS) Drain-to-Source Resistance, RDS(on)(OHMS) Rating and characteristic curves (FMSBSS138) Fig 7. On-Resistance vs Drain Current 8 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.20 6.0 Fig 8. On-Resistance vs Drain Current 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.05 0.1 0.2 0.25 0.3 0.35 0.4 0.45 Fig 9. On-Resistance vs Drain Current Fig 10. Body Diode Forward Voltage 4.5 1.0 Diode Current, ID (Amps) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.05 0.1 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 Drain Current, I D (Amps) 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, V SD (Volts) Fig 11. Capacitance 120 100 Capacitance, (pF) 0.5 Drain Current, I D (Amps) Drain Current, I D (Amps) Drain-to-Source Resistance, RDS(on)(OHMS) 0.15 0.25 80 60 40 20 0 0 5 10 15 20 25 Drain to Source Voltage, V DS (Volts) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Formosa MS N-Channel Small Signal MOSFET FMSBSS138 Pinning information Pin Simplified outline Symbol D PinD PinG PinS D Drain Gate Source G G S S Marking Marking code J1 (Note 1) • • M Type number FMSBSS138 Note: 1.M = Month code Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Formosa MS N-Channel Small Signal MOSFET FMSBSS138 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8 Formosa MS N-Channel Small Signal MOSFET FMSBSS138 Reel packing PACKAGE SOT-23 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) 3,000 4.0 30,000 REEL DIA, (m/m) INNER BOX (m/m) 183*183*123 CARTON SIZE (m/m) 178 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date Revision Page. DS-231147 2009/08/10 2010/11/17 B 8