fmsbss138

Formosa MS
N-Channel Small Signal MOSFET
FMSBSS138
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking ........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Formosa MS
N-Channel Small Signal MOSFET
FMSBSS138
50V N-Channel Small Signal
MOSFET
Package outline
SOT-23
(B)
0.014 (0.35)
0.034 (0.85)
0.020 (0.51)
.084(2.10)
.068(1.70)
0.124 (3.10)
• Low On-Resistance : 3.5 Ω
• Low Input Capacitance: 40pF
• Low Out put Capacitance : 12pF
• Low Threshole :1 .5V
• Fast Switching Speed : 20ns
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" for Halogen-free part, ex. FMSBSS138-H.
0.108 (2.70)
0.042 (1.05)
Features
(C)
(A)
0.072 (1.80)
0.024 (0.61)
0.012 (0.30)
0.047 (1.19)
0.120 (3.00)
0.059 (1.47)
0.002 (0.05)
Mechanical data
0.01 (0.25)
0.084 (2.10)
0.035 (0.88)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
M aximum ratings (AT T
o
A
=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Gate-source voltage
SYMBOL
MAX.
UNIT
V DSS
MIN.
TYP.
50
V
V GS
±20
V
Continuous drain current
T A =25 C
ID
200
mA
Pulsed drain current
t P<=10us
I DM
800
mA
PD
225
mW
R θJA
556
o
o
Maximum power dissipation
T A =25 C
Thermal resistance
Junction to ambient
Operation junction and storage temperature range
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T J , T STG
Page 2
-55
o
C/W
o
+150
C
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Formosa MS
N-Channel Small Signal MOSFET
FMSBSS138
Electrical characteristics (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
STATIC(1)
Drain-source breakdown voltage
V GS = 0V, I D = 250µA
Gate-source threshold voltage
V DS = V GS , I D = 1.0mA
V (BR)DSS
50
V GS(th)
0.5
V GS = 2.75V, I D < 200mA, TA=-40 °C to + 85 °C
V
1.5
5.6
10
R DS(on)
Drain-source on-state resistance
Ω
V GS = 5.0V, I D = 200mA
V DS = 25V, V GS = 0V
Zero gate voltage drai n current
V DS = 50V, V GS = 0V
Gate-source leakage current
Forward transconductance
V
V GS = ±20V, V DS = 0V
V DS=25V, I D=200mA, f=1.0KHZ
3.5
0.1
I DSS
I GSS
g fS
µA
0.5
±0. 1
100
µA
ms
DYNAMIC
Input capacitance
C iss
V DS = 25V, V GS = 0V
f = 1.0 MHz
Output capacitance
Reverse transfer capacitance
40
50
C oss
12
25
C rss
3.5
5.0
pF
SWITCHING(2)
Turn-On Delay Time
V DD = 30V, I D = 200mA
t d(on)
20
Turn-Off Delay Time
V DD = 30V, I D = 100mA
t d(off)
20
ns
Note: 1. Pulse Test : PW<=300µs, Duty Cycle<=2%
2. Switching Time is essentially independent of operating temperature.
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Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Rating and characteristic curves (FMSBSS138)
Fig2. Transfer Characteristics
0.9
0.7
0.8
Drain Current, ID (Amps)
Drain Current, ID (Amps)
Fig1. On-Region Characteristics
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
0
10
0
0.5
2.0
2.5
3.0
3.5
4.0
4.5
VARIANCE, VGS(th) ( Volts )
1.25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-55
-5
45
95
1.125
1
0.875
0.75
-55
0.6
145
-30
-5
Junction Temperature, T J (°c)
8
6
4
2
0
500
1000
1500
2000
2500
3000
Total Cate Charge, Q T (pC)
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20
45
70
95
120
145
Junction Temperature, T J (°c)
Fig 5. Gate Charge
0
1.5
Fig 4. Threshold Voltage Variation with Temperature
Fig 3. On-Resistance Variation with Temperature
2.2
10
Gate-to-Source Voltage, VGS(Volts)
1.0
Gate-to-Source Voltage, V GS (Volts)
Drain-to-Source Resistance, RDS(on)(OHMS)
Drain to Source Resistance, RDS(on) (NORMALIZED)
Drain-to-Source Voltage, V DS (Volts)
10
Fig. 6 On-Resistance vs Drain Current
9
8
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.20
0.25
Drain Current, I D (Amps)
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Drain-to-Source Resistance, RDS(on)(OHMS)
Drain-to-Source Resistance, RDS(on)(OHMS)
Rating and characteristic curves (FMSBSS138)
Fig 7. On-Resistance vs Drain Current
8
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.20
6.0
Fig 8. On-Resistance vs Drain Current
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
0.05
0.1
0.2
0.25
0.3
0.35
0.4
0.45
Fig 9. On-Resistance vs Drain Current
Fig 10. Body Diode Forward Voltage
4.5
1.0
Diode Current, ID (Amps)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
0.05
0.1
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
Drain Current, I D (Amps)
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, V SD (Volts)
Fig 11. Capacitance
120
100
Capacitance, (pF)
0.5
Drain Current, I D (Amps)
Drain Current, I D (Amps)
Drain-to-Source Resistance, RDS(on)(OHMS)
0.15
0.25
80
60
40
20
0
0
5
10
15
20
25
Drain to Source Voltage, V DS (Volts)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Formosa MS
N-Channel Small Signal MOSFET
FMSBSS138
Pinning information
Pin
Simplified outline
Symbol
D
PinD
PinG
PinS
D
Drain
Gate
Source
G
G
S
S
Marking
Marking code
J1
(Note 1)
• •
M
Type number
FMSBSS138
Note: 1.M = Month code
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Formosa MS
N-Channel Small Signal MOSFET
FMSBSS138
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8
Formosa MS
N-Channel Small Signal MOSFET
FMSBSS138
Reel packing
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
3,000
4.0
30,000
REEL
DIA,
(m/m)
INNER
BOX
(m/m)
183*183*123
CARTON
SIZE
(m/m)
178
382*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
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TEL:886-2-22696661
FAX:886-2-22696141
Page 8
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2010/11/17
B
8