Formosa MS

Formosa MS
SMD MOSFET
FMBSS84
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
FMBSS84
Package outline
50V P-Channel Enhancement
Mode Power MOSFET
Features
(B)
(C)
(A)
0.072 (1.80)
0.024 (0.61)
0.012 (0.30)
0.047 (1.19)
Mechanical data
0.014 (0.35)
.084(2.10)
.068(1.70)
0.108 (2.70)
0.124 (3.10)
DS(ON)
0.020 (0.51)
0.042 (1.05)
• L ow on-resistance R
= 10Ω
• L ow input capacitance : 30pF
• Fast switching speed : 2.5ns
• L ow output capacitance : 10pF
• L ow threshole : 2.0V
• In compliance with EU RoHS 2002/95/EC directives
• Suffix "-H" indicates Halogen-free part, ex.FMBSS84-H
0.034 (0.85)
SOT-23
0.120 (3.00)
0.059 (1.47)
0.002 (0.05)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
0.01 (0.25)
0.084 (2.10)
0.035 (0.88)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
M aximum ratings (AT T
A
Dimensions in inches and (millimeters)
=25 oC unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Drain current-continue
T A = 25 OC
Symbol
MIN.
TYP.
MAX.
UNIT
V DSS
50
V
ID
130
I DM
520
V GS
±20
mA
-pulsed
Gate- source voltage-continue
O
Total power dissipation (Derate above 25 C)
TJ
Storage temperature
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T STG
Page 2
o
556
R θJA
Operation junction temperature
mW
225
PD
Junction to ambient thermal resistance
V
-55
-65
Document ID
Issued Date
DS-231142
2009/08/10
o
+175
o
Revised Date
2010/03/10
C/W
+150
Revision
B
C
C
Page.
8
Formosa MS
SMD MOSFET
FMBSS84
Electrical characteristics (At T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Drain-source breakdown voltage
V GS = 0V, I D = -250uA
BV DSS
50
Zero gate voltage drain current
V DS = 25V, V GS = 0V
V DS = 50V, V GS = 0V
I DSS
Gate-body leakage current-forward
V GS = 20V, V DS =0
I GSSF
60
uA
Gate-body leakage current-reverse
V GS = -20V, V DS =0
I GSSR
-60
uA
2.0
V
10
Ω
OFF CHARACTERISTICS
V
0.1
µA
15
ON CHARACTERISTICS (Note 1)
Gate threshold voltage
Static drain-source on-resistance
V DS = V GS , I D = 1.0mA
V GS(th)
V GS = 5.0V, I D = 100mA
R DS(ON)
0.8
5.0
Source-drain current
IS
0.130
A
Source-drain current (pulse), Note 2
I SM
0.520
A
Forward transconductance, Note 1
V DS =25V, I D = 100mA, f = 1kHz*
g FS
Forward on voltage, Note 1
ms
50
V SD
2.5
V
DYNAMIC CHARACTERISTICS
Intput capacitance
Output capacitance
V DS = 5V, V GS = 0V,
f=1.0MHz
Reverse transfer capacitance
C iss
30
C oss
10
C rss
Gate charge
pF
5.0
QT
pC
6000
t d(ON)
25
tr
1.0
t d(OFF)
16
Turn-On Delay Time
V DD = -15V, R L =50Ω, I D =-2.5A
ns
Turn-Off Delay Time
tf
8
Note 1. Pulse duration >= 300µs, duty cycle 2.0%
2. Pulse width limited by Max. junction temperature
3. Surface mounted on 1 inch square copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
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Page 3
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8
Rating and characteristic curves (FMBSS84)
FIG.2 ON-REGION CHARACTERISTICS
FIG.1 TRANSFER CHARACTERISTICS
0.6
0.5
25 OC
V DS = 10V
ID, DRAIN CURRENT,(A)
-55 OC
ID, DRAIN CURRENT(A)
150 OC
0.4
0.3
0.2
0.1
0.4
3.25V
0.3
3.0V
0.2
2.75V
0.1
2.5V
2.25V
0
0
1
2
3
4
0
FIG.3 ON-RESISTANCE VS DRAIN CURRENT
V GS = 4.5V
8
O
150 C
6
25 OC
4
O
-55 C
2
0
0.2
0.4
0.6
I D, DRAIN CURRENT (A)
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2
4
6
8
10
V DS, DRAIN TO SOURCE VOLTAGE(V)
R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS)
V GS, GATE TO SOURCE VOLTAGE, (V)
R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS)
V GS = 3.5V
O
T J =25 C
0.5
FIG.4 ON-RESISTANCE VS DRAIN CURRENT
7
V GS = 10V
6
O
150 C
5
25 OC
4
3
O
-55 C
2
0
0.2
0.4
0.6
I D, DRAIN CURRENT (A)
Page 4
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8
Rating and characteristic curves (FMBSS84)
FIG.6 GATE CHARGE
2
V GS = 10V
I D = 0.52A
1.8
1.6
1.4
V GS = 4.5V
I D = 0.13A
1.2
1
0.8
VGS, GATE TO SOURCE VOLTAGE,(V)
R DS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
FIG.5 ON-RESISTANCE VARIATION
WITH TEMPERATURE
0.6
8
7
V DS = 40V
O
T J = 25 C
6
5
4
3
I D = 0.5A
2
1
0
-55
-5
45
95
145
0
O
T J, JUNCTION TEMPERAURE, ( C)
500
1000
1500
2000
Q T, TOTAL GATE CHARGE, (pC)
FIG.7 BODY DIODE FORWARD VOLTAGE
ID, DIODE CURRENT(A)
1
150 OC
0.1
-55 OC
25 OC
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
V SD, DIODE FORWARD VOLTAGE, (V)
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Page 5
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
FMBSS84
Pinning information
Pin
Simplified outline
Symbol
D
PinD
PinG
PinS
Drain
Drain
Gate
Source
Gate
G
Source
S
Marking
Type number
Marking code
FMBSS84
PD
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
FMBSS84
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
FMBSS84
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
383*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
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TEL:886-2-22696661
FAX:886-2-22696141
Page 8
Document ID
Issued Date
DS-231142
2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
8