Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protection Features Package outline • R DS(ON) =3.0Ω, V GS=10V, @60V/0.50A • R DS(ON) =4.0Ω, V GS=4.5V, @60V/0.20A • ESD production 2kV (Human body mode) • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Specially designed for battery operated system, (B) (C) (A) 0.054 (1.35) Mechanical data 0.012 (0.30) 0.016 (0.40) 0.026 (0.65)Max .056(1.40) .048(1.20) 0.072 (1.80) solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc. In compliance with EU RoHS 2002/95/EC directives. Suffix "-H" indicates Halogen-free part, ex. 2N7002ΚW-H. 0.088 (2.20) 0.017 (0.42)Min. 0.046 (1.15) 0.096 (2.40) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-323 • Terminals : Solder plated, solderable per 0.040 (1.00) 0.004 (0.10) 0.080 (2.00) 0.010 (0.25) • • SOT-323 0.032 (0.80) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.006 gram Dimensions in inches and (millimeters) M aximum ratings (AT T A =25 oC unless otherwise noted) PARAMETER Symbol MAX. UNIT 60 V V DGR 60 V ID ±115 I DM 800 Drain-source voltage V DSS Drain-gate voltage(G RS = 1.0MΩ) Drain to current-continue MIN. TYP. mA -pulsed Gate to source voltage-continue Total power dissipation V GS ±20 O V 200 Derate above 25 C mW PD 120 Derate above 75 OC Operation junction temperature range TJ Storage temperature range T STG Thermal resistance junction to ambient http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 -55 -55 o +150 o o 625 R θJA Page 2 +150 C C C/W Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW Electrical characteristics (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT STATIC Drain-source breakdown voltage Gate Threshold Voltage V GS = 0V, I D = 10uA BV DSS 60 V DS = V GS , I D = 250uA V GS(th) 1.0 V GS = 4.5V, I D =200mA V 2.5 V 4.0 R DS(on) Drain-Source On-State Resistance Ω V GS = 10V, I D = 500mA 3.0 V DS = 60V, V GS = 0V I DSS 1 µA Gate Body Leakage V GS = +/-20V, V DS = 0V I GSS ±10 µA Forward Transconductance V DS = 15V, I D = 250mA g fS Diode Forward Voltage I S = 200mA, V GS = 0V V SD V DS = 15V, I D = 200mA V DD = 4.5V Zero Gate Voltage Drai n Current 100 ms 1.3 V Qg 0.80 nC t on 20 t off 40 C iss 35 C oss 10 C rss 5 0.82 DYNAMIC Total Gate Charge Turn-On Delay Time V DD = 30V, R L = 150 ohm, I D = 200mA, V GEN = 10V, R G = 10 ohm Turn-Off Delay Time ns Input Capacitance V DS = 25V, V GS = 0V f = 1.0 MHz Output Capacitance Reverse Transfer Capacitance Switching Test Circuit Gate Charge Test Circuit V DD V DD RL V IN V GS pF RL V OUT D V GS D 1mA RG V GS DUT DUT G G RG S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 S Page 3 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Rating and characteristic curves (2N7002KW) FIG.2 TRANSFER CHARACTERISTIC FIG.1 TYPICAL FORWARD CHARACTERISTIC 1.2 V GS = 6V~10V DRAIN TO SOURCE CURRENT,(A) DRAIN TO SOURCE CURRENT,(A) 1.2 5.0V 1.0 0.8 4.0V 0.6 0.4 3.0V 0.2 0 V DS = 10V 1.0 0.8 0.6 0.4 o 25 C 0.2 0 0 1 2 3 4 5 0 DRAIN TO SOURCE VOLTAGE, (V) 4 4 ON-RESISTANCE, (ohm) ON-RESISTANCE, (ohm) 5 V GS = 4.5V 2 V GS = 10V 1 0 3 0.4 0.6 0.8 1.0 4 5 6 1.2 I D =500mA 2 1 00 0.2 3 FIG.4 ON RESISTANCE VS GATE TO SOURCE VOLTAGE 5 0 2 GATE TO SOURCE VOLTAGE, (V) FIG.3 ON RESISTANCE VS DRAIN CURRENT 3 1 I D =200mA 2 3 4 5 6 7 8 9 10 GATE TO SOURCE VOLTAGE, (V) DRAIN current, (A) FIG.5 ON RESISTANCE VS JUNCTION TEMPERATURE ON-RESISTANCE, (ohm) NORMALIZED 2.0 V GS = 10V 1.8 I D = 500mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o JUNCTION TEMPERATURE, ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Rating and characteristic curves (2N7002KW) FIG.7 GATE CHARGE FIG.6 GATE CHARGE WAVEFORM 10 Vgs Qsw Vgs(th) V DS = 10V GATE TO SOURCE VOLTAGE,(V) Qg 8 I D = 500mA 6 4 2 0 0 Qg(th) Qgs 0.2 0.6 0.8 1.0 GATE CHARGE, (nC) Qg Qgd 0.4 GATE CHARGE WAVEFORM FIG.9 BREAKDOWN VOLTAGE VS JUNCTION TEMPERATURE 92 1.2 I D = 250µA 1.0 0.9 0.8 0.7 I D = 250uA 90 1.1 BREAKDOWN VOLTAGE, (V) THRESHOLD VOLTAGE, (V) NORMALIZED FIG.8 THRESHOLD VOLTAGE VS TEMPERATURE 88 86 84 82 80 76 74 72 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 o 125 150 o JUNCTION TEMPERATURE, ( C) JUNCTION TEMPERATURE, ( C) FIG.10 SOURCE-DRAIN DIODE FORWARD VOLTAGE 10 SOURCE CURRENT,(A) V GS = 0V 1 o 25 C o 125 C 0.1 o -55 C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE TO DRAIN VOLTAGE, (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number Marking code 2N7002KW RK Suggested solder pad layout SOT-323 0.025(0.65) 0.025(0.65) 0.075(1.9) 0.035(0.90) 0.028(0.70) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-323 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.47 2.95 1.15 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW Reel packing PACKAGE SOT-323 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date Revision Page. DS-251127 2009/07/10 2012/02/02 B 8