Formosa MS

N-Channel SMD MOSFET
Formosa MS
FMSBSS138
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking ........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
N-Channel SMD MOSFET
Formosa MS
FMSBSS138
50V N-Channel Small Signal
MOSFET
Package outline
SOT-23
0.020 (0.50)
(B)
0.012 (0.30)
.084(2.10)
.068(1.70)
0.120 (3.04)
0.110 (2.80)
0.045 (1.15)
• Low On-Resistance : 3.5 Ω
• Low Input Capacitance: 40pF
• Low Out put Capacitance : 12pF
• Low Threshole :1 .5V
• Fast Switching Speed : 20ns
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" for Halogen-free part, ex. FMS BSS138-H.
0.034 (0.85)
Features
(C)
(A)
0.063 (1.60)
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
0.051 (1.30)
0.003 (0.09)
Mechanical data
0.007 (0.18)
0.083 (2.10)
0.035 (0.89)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
M aximum ratings (AT T
o
A
=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Gate-source voltage
SYMBOL
MAX.
UNIT
V DSS
MIN.
TYP.
50
V
V GS
±20
V
Continuous drain current
T A =25 C
ID
200
mA
Pulsed drain current
t P<=10us
I DM
800
mA
PD
225
mW
R θJA
556
o
o
Maximum power dissipation
T A =25 C
Thermal resistance
Junction to ambient
Operation junction and storage temperature range
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T J , T STG
Page 2
-55
o
C/W
o
+150
C
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
N-Channel SMD MOSFET
Formosa MS
FMSBSS138
Electrical characteristics (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
STATIC(1)
V GS = 0V, I D = 250μA
Drain-source breakdown voltage
V DS = V GS , I D = 1.0mA
Gate-source threshold voltage
V (BR)DSS
50
V GS(th)
0.5
V GS = 2.75V, I D < 200mA, TA=-40 ° C to + 85 ° C
V
1.5
5.6
10
R DS(on)
Drain-source on-state resistance
Ω
V GS = 5.0V, I D = 200mA
V DS = 25V, V GS = 0V
Zero gate voltage drai n current
V DS = 50V, V GS = 0V
Gate-source leakage current
Forward transconductance
V
V GS = ± 20V, V DS = 0V
V DS=25V, I D=200mA, f=1.0KHZ
3.5
0.1
I DSS
±0 . 1
I GSS
g fS
μA
0.5
100
μA
ms
DYNAMIC
Input capacitance
C iss
V DS = 25V, V GS = 0V
f = 1.0 MHz
Output capacitance
Reverse transfer capacitance
40
50
C oss
12
25
C rss
3.5
5.0
pF
SWITCHING(2)
Turn-On Delay Time
V DD = 30V, I D = 200mA
t d(on)
20
Turn-Off Delay Time
V DD = 30V, I D = 200mA
t d(off)
20
ns
Note: 1. Pulse Test : PW<=300μs, Duty Cycle<=2%
2. Switching Time is essentially independent of operating temperature.
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Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
Rating and characteristic curves (FMSBSS138)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
Rating and characteristic curves (FMSBSS138)
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FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
N-Channel SMD MOSFET
Formosa MS
FMSBSS138
Pinning information
Pin
Simplified outline
Symbol
D
PinD
PinG
PinS
D
Drain
Gate
Source
G
G
S
S
Marking
Type number
Marking code
J1
FMSBSS138
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
N-Channel SMD MOSFET
Formosa MS
FMSBSS138
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
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Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8
N-Channel SMD MOSFET
Formosa MS
FMSBSS138
Reel packing
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
3,000
4.0
30,000
REEL
DIA,
(m/m)
INNER
BOX
(m/m)
183*183*123
CARTON
SIZE
(m/m)
178
CARTON
(pcs)
382*262*387
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 8
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231147
2009/08/10
2011/07/21
C
8