Formosa MS Low VF Chip Schottky Barrier Rectifier SL22-N THRU SL24-N List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities...........................................................7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 Revision C Page. 7 Formosa MS Low VF Chip Schottky Barrier Rectifier SL22-N THRU SL24-N 1.5A Surface Mount Schottky Barrier Rectifiers - 20V-40V Package outline Features • Batch process design, excellent power dissipation offers SOD-323 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. 0.106 (2.7) 0.091 (2.3) • Very tiny plastic SMD package. • Low power loss, high efficiency. • High current capability, very low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.057 (1.45) 0.041 (1.05) MIL-STD-19500 /228 0.047 (1.2) 0.031 (0.8) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-323 • Terminals :Plated terminals, solderable per MIL-STD-750, Method 2026 0.016(0.4) Typ. 0.016(0.4) Typ. Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.008 gram Maximum ratings (AT T A=25 oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Reverse current V R = 15V T A = 25 OC Thermal resistance Junction to ambient Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature Symbol MIN. A I FSM 30 A IR 65 R èJA 80 CJ 130 VF *1 V RRM (V) V RMS*2 (V) *3 VR (V) SL22-N 20 14 20 SL23-N 30 21 30 SL24-N 40 28 40 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Operating temperature T J, ( OC) -55 to +125 Page 2 uA 100.0 O C/W pF +175 -65 I F = 2000mA SYMBOLS UNIT 1.5 T STG I F = 500mA MAX. IO I F = 100mA Forward voltage TYP. 240 250 300 350 430 450 O C mV *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 Revision C Page. 7 Rating and characteristic curves (SL22-N THRU SL24-N) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 3.0 /S L2 4N SL 2 2-N 10 SL 23 -N 1.0 1.8 1.6 1.4 Single Phase 1.2 Half Wave 60Hz Resistive Or Inductive Load 0.8 0.4 0 0 20 40 TJ=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWAARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 50 40 30 8.3ms Single Half TJ=25 C Sine Wave 20 JEDEC method 10 0 1 100 5 50 10 100 FIG.5-TYPICAL JUNCTION CAPACITANCE 10 350 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) NUMBER OF CYCLES AT 60Hz 1.0 TJ=75 C TJ=25 C .1 300 250 200 150 100 50 .01 0 0 20 40 60 80 .01 .1 .5 1 5 10 50 100 Revision Page. REVERSE VOLTAGE,(V) PERCENTAGE RATED PEAK REVERSE VOLTAGE http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 .05 100 120 140 Page 3 Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 C 7 Formosa MS Low VF Chip Schottky Barrier Rectifier SL22-N THRU SL24-N Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code SL22-N SL23-N SL24-N L2 L3 L4 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-323 0.059 (1.50) 0.039 (1.00) 0.051 (1.30) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 Revision C Page. 7 Formosa MS Low VF Chip Schottky Barrier Rectifier SL22-N THRU SL24-N Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOD-323 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.47 2.95 1.15 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 Revision C Page. 7 Formosa MS Low VF Chip Schottky Barrier Rectifier SL22-N THRU SL24-N Reel packing PACKAGE REEL SIZE 7" SOD-323 REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) APPROX. GROSS WEIGHT (kg) 3,000 4.0 30,000 183*183*123 178 382*262*387 240,000 8.0 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 Revision C Page. 7 Formosa MS Low VF Chip Schottky Barrier Rectifier SL22-N THRU SL24-N High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=125 OC for 168 hrs. MIL-STD-750D METHOD-1026 4. Forward Operation Life Rated average rectifier current at T=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker 15P SIG at TA=121 OC for 4 hrs. 7. Temperature Cycling -55 OC to +125OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 9. Forward Surge 10. Humidity 11. High Temperature Storage Life 12. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1051 MIL-STD-750D METHOD-1056 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-4066-2 8.3ms single half sine-wave superimposed on rated load, one surge. at TA=65 OC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 at 175OC for 1000 hrs. MIL-STD-750D METHOD-1031 Dip into Freon at 25OC for 1 min. MIL-STD-202F METHOD-215 Page 7 Document ID Issued Date Revised Date DS-121656 2008/02/10 2009/02/10 Revision C Page. 7