WTC3401 - Weitron

WTC3401
P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
DRAIN CURRENT
-4.2 AMPERES
1
DRAIN SOURCE VOLTAGE
GATE
-30 VOLTAGE
2
SOURCE
Features:
3
*Advanced trench process technology
*High Density Cell Design For Ultra Low
On-Resistance
Maximum Ratings(TA=25℃
1
2
SOT-23
Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±12
Continuous Drain Current
Pulsed Drain Current
(T A
1
2
(T A =25˚C)
(T A =70˚C)
Junction and Storage Temperature Range
3
1.4
PD
W
1.0
-55~+150
˚C
Unless Otherwise Specified)
Rating
Maximum Junction-to-Ambient 1
A
-30
TJ , Tstg
Thermal Characteristics (TA=25℃
Maximum Junction-to-Lead
-3.5
I DM
Power Dissipation
V
-4.2
ID
(T A
Unit
Symbol
t ≤ 10s
Steady-State
Steady-State
R θJA
R θJL
Typ
Max
65
90
85
125
43
60
Unit
˚C/W
˚C/W
1.The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25˚C. The value in any given application depends on the user’s specific board design.
The current rating is based on the t≤10s thermal resistance rating.
2.Repetitive rating, pulse width limited by junction temperature.
3.The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
Device Marking
WTC3401= A1
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WTC3401
Electrical Characteristics (TA = 25℃ Unless otherwise noted)
Characteristic
Static
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
Symbol
Min
BVDSS
-30
Typ
Gate-Body leakage current
VDS=0V, VGS=±12V
-1
-5
IGSS
Gate Threshold Voltage
VDS=VGS ID=-250µA
VGS(th)
-0.7
On state drain current
VGS=-4.5V, VDS=-5V
ID(ON)
-25
Static Drain-Source On-Resistance
VGS=-10V, ID=-4.2A
-1
µA
±100
nA
-1.3
V
A
70
RDS(ON)
VGS=-4.5V, ID=-4A
Units
V
IDSS
TJ=55°C
Max
80
VGS=-2.5V, ID=-1A
mΩ
120
Forward Transconductance
VDS=-5V, ID=-5A
gFS
Diode Forward Voltage
IS=-1A,VGS=0V
VSD
Maximum Body-Diode Continuous Current
7
S
11
-0.75
IS
-1
V
-2.2
A
Dynamic
Input Capacitance
VGS=0V, VDS=-15V, f=1MHz
Ciss
954
pF
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Coss
115
pF
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
Crss
77
pF
Rg
6
Ω
Qg
9.4
nC
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgs
2
nC
Gate Drain Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd
3
nC
Turn-On DelayTime
VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω
tD(on)
6.3
ns
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω
tr
3.2
ns
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω
tD(off)
38.2
ns
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω
tf
12
ns
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=100A/µs
trr
20.2
ns
Body Diode Reverse Recovery Charge
IF=-4A, dI/dt=100A/µs
Qrr
11.2
nC
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Switching
Total Gate Charge
VGS=-4.5V, VDS=-15V, ID=-4A
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WTC3401
Typical Electrical Characteristics
10
25.00
-10V
VDS=-5V
-4.5V
20.00
8
6
15.00
-ID(A)
-ID (A)
-3V
-2.5V
VGS=-2V
5.00
0.00
0.00
125°C
4
10.00
25°C
2
0
1.00
2.00
3.00
4.00
5.00
0
0.5
120
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
2
2.5
3
1.8
100
80
VGS=-2.5V
VGS=-4.5V
60
40
VGS=-10V
20
0.00
ID=-3.5A, VGS=-4.5V
1.6
ID=-3.5A, VGS=-10V
1.4
VGS=-2.5V
1.2
ID=-1A
1
0.8
2.00
4.00
6.00
8.00
10.00
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
190
170
1.0E+00
150
ID=-2A
1.0E-01
130
125°C
-IS (A)
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
110
90
125°C
1.0E-02
1.0E-03
25°C
70
1.0E-04
50
25°C
1.0E-05
30
1.0E-06
10
0
2
4
6
8
0.0
10
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0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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WTC3401
Typical Electrical Characteristics
1400
5
VDS=-15V
ID=-4A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
Crss
200
0
0
0
2
4
6
8
10
12
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
5
10
15
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
10.0 limited
30
100µs
Power (W)
-ID (Amps)
20
1ms
0.1s
10ms
1.0
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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WTC3401
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
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