Single N-channel MOSFET ELM14420AA-N ■General description ■Features ELM14420AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=13.7A (Vgs=10V) Rds(on) < 10.5mΩ (Vgs=10V) Rds(on) < 12mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±12 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current 13.7 Id 9.7 60 Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.1 A 1 A 2 W 2.0 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 28 Max. 40 Unit °C /W 54 21 75 30 °C /W °C /W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 4 5 6 GATE DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM14420AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V 30 1.000 5.000 μA 100 nA 1.1 2.0 V A 8.3 10.5 12.5 15.0 9.7 37 12.0 mΩ S Is=1A, Vgs=0V 0.76 1.00 5 V A 4050 Vgs=0V, Vds=15V, f=1MHz 3656 256 pF pF Vgs=0V, Vds=0V, f=1MHz 168 0.86 1.10 pF Ω 30.5 36.0 nC Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V 0.004 Ta=55°C Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Static drain-source on-resistance Vgs=10V Rds(on) Id=13.7A Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (4.5V) Crss Rg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V 0.6 40 Ta=125°C Vgs=4.5V, Id=12.7A Vds=5V, Id=13.7A Qg 4.6 nC 8.6 5.5 9.0 nC ns Vgs=10V, Vds=15V 3.4 7.0 ns td(off) RL=1.1Ω, Rgen=0Ω tf 49.8 5.9 75.0 11.0 ns ns 22.5 12.5 28.0 16.0 ns nC tr trr Qrr Vgs=10V, Vds=15V, Id=13.7A 30 mΩ If=13.7A, dIf/dt=100A/μs If=13.7A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM14420AA-N ■Typical electrical and thermal characteristics 60 30 Vgs=5V 50 25 Vgs =2.5V 20 Id(A) Id(A) 40 30 20 125°C 15 10 Vgs =2.0V 10 25°C 5 0 0 1 2 3 4 0 5 0.0 0.5 Vds(Volts) 1.5 2.0 2.5 3.0 Vgs(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 1.8 12 Normalize ON-Resistance Id=13.7A 11 Rds(on)(m� ) 1.0 Vgs =4.5V 10 9 8 Vgs =10V 7 1.6 Vgs=4.5V 1.4 Vgs=10V 1.2 1.0 6 0 5 10 15 20 25 30 0.8 0 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1E+01 Id=13.7A 25 20 1E+00 1E-01 125°C Is(A) Rds(on)(m� ) 25 15 10 125°C 1E-02 1E-03 25°C 1E-04 5 25°C 1E-05 0 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 Vsd(Volts) Figure 6: Body-Diode Characteristics Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single N-channel MOSFET ELM14420AA-N 5 10000 Vds=15V Id=13.7A Ciss Capacitance (pF) Vgs(Volts) 4 3 2 1000 Coss 1 Crss 100 0 0 10 20 30 0 40 Id(A) 0.1s 1s 1 0.1 1ms Power (W) 10ms 10s T j(max) =150°C Ta =25°C 0.1 Z�ja Normalized Transient Thermal Resistance 30 30 20 10 0 0.01 100 Vds(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 25 10 DC 1 20 40 100�s 10 15 50 10�s Rds(on) limited 10 Vds(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 5 D=T on/T Tj,pk =Ta+Pdm.Z�ja .R�ja R�ja =40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence 4-4 100 1000