Single N-channel MOSFET

Single N-channel MOSFET
ELM14420AA-N
■General description
■Features
ELM14420AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=13.7A (Vgs=10V)
Rds(on) < 10.5mΩ (Vgs=10V)
Rds(on) < 12mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±12
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
13.7
Id
9.7
60
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.1
A
1
A
2
W
2.0
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
28
Max.
40
Unit
°C /W
54
21
75
30
°C /W
°C /W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
4
5
6
GATE
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14420AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
30
1.000
5.000
μA
100
nA
1.1
2.0
V
A
8.3
10.5
12.5
15.0
9.7
37
12.0
mΩ
S
Is=1A, Vgs=0V
0.76
1.00
5
V
A
4050
Vgs=0V, Vds=15V, f=1MHz
3656
256
pF
pF
Vgs=0V, Vds=0V, f=1MHz
168
0.86
1.10
pF
Ω
30.5
36.0
nC
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
0.004
Ta=55°C
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Static drain-source on-resistance
Vgs=10V
Rds(on) Id=13.7A
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (4.5V)
Crss
Rg
Gate-source charge
Qgs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
0.6
40
Ta=125°C
Vgs=4.5V, Id=12.7A
Vds=5V, Id=13.7A
Qg
4.6
nC
8.6
5.5
9.0
nC
ns
Vgs=10V, Vds=15V
3.4
7.0
ns
td(off) RL=1.1Ω, Rgen=0Ω
tf
49.8
5.9
75.0
11.0
ns
ns
22.5
12.5
28.0
16.0
ns
nC
tr
trr
Qrr
Vgs=10V, Vds=15V, Id=13.7A
30
mΩ
If=13.7A, dIf/dt=100A/μs
If=13.7A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM14420AA-N
■Typical electrical and thermal characteristics
60
30
Vgs=5V
50
25
Vgs =2.5V
20
Id(A)
Id(A)
40
30
20
125°C
15
10
Vgs =2.0V
10
25°C
5
0
0
1
2
3
4
0
5
0.0
0.5
Vds(Volts)
1.5
2.0
2.5
3.0
Vgs(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
1.8
12
Normalize ON-Resistance
Id=13.7A
11
Rds(on)(m� )
1.0
Vgs =4.5V
10
9
8
Vgs =10V
7
1.6
Vgs=4.5V
1.4
Vgs=10V
1.2
1.0
6
0
5
10
15
20
25
30
0.8
0
Id(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
30
1E+01
Id=13.7A
25
20
1E+00
1E-01
125°C
Is(A)
Rds(on)(m� )
25
15
10
125°C
1E-02
1E-03
25°C
1E-04
5
25°C
1E-05
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
Vsd(Volts)
Figure 6: Body-Diode Characteristics
Vgs(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single N-channel MOSFET
ELM14420AA-N
5
10000
Vds=15V
Id=13.7A
Ciss
Capacitance (pF)
Vgs(Volts)
4
3
2
1000
Coss
1
Crss
100
0
0
10
20
30
0
40
Id(A)
0.1s
1s
1
0.1
1ms
Power (W)
10ms
10s
T j(max) =150°C
Ta =25°C
0.1
Z�ja Normalized Transient
Thermal Resistance
30
30
20
10
0
0.01
100
Vds(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note 5)
10
25
10
DC
1
20
40
100�s
10
15
50
10�s
Rds(on)
limited
10
Vds(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
5
D=T on/T
Tj,pk =Ta+Pdm.Z�ja .R�ja
R�ja =40°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
T on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
4-4
100
1000