MXTA42 - Weitron

MXTA42
NPN Plastic-Encapsulate Transistor
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
Features:
2
3
*Low Collector-Emitter Saturation Voltage
*High Breakdown Voltage
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
VEBO
Collector Current-Continuous
Collector Current-Pulsed
Value
305
310
5.0
IC
ICM
200
Unit
Vdc
Vdc
Vdc
mAdc
500
mAdc
Thermal Characteristics ( TA=25 C unless otherwise noted)
Characteristics
Symbol
Max
Unit
PC
500
mW
Thermal Resistance, Junction to Ambient
R θJA
250
C/W
Junction and Storage, Temperature Range
TJ,Tstg
-55 to +150
C
Collector Power Dissipation
Device Marking
MXTA42=A42
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
V(BR)CEO
305
-
Vdc
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
V(BR)CBO
310
-
Vdc
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
V(BR)EBO
5.0
-
Vdc
ICBO
-
0.25
uAdc
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Collector Cutoff Current (VCE = 200 Vdc, IB=0)
(V CE = 300 Vdc, IB=0)
IEBO
Emitter Cutoff Current (VEB= 5.0 Vdc, IC =0)
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0.25
ICEO
1/4
5
-
0.1
uAdc
uAdc
03-Sep-2013
MXTA42
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Max
Symbol
Min
Unit
hFE (1)
hFE (2)
hFE (3)
60
100
75
300
-
-
Collector-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
VCE(sat)
-
0.2
Vdc
Base-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
VBE(sat)
-
0.9
Vdc
fT
50
-
MHz
ON CHARACTERISTICS
DC Current Gain
(IC= 1 mAdc, VCE=10 Vdc)
(IC= 10 mAdc, VCE=10 Vdc)
(IC=30 mAdc, VCE=10 Vdc)
Transition Frequency
(VCE =20 Vdc, IC =10 mAdc, f=30MHz)
Electrical Characteristic curves(TA=25˚C)
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03-Sep-2013
MXTA42
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03-Sep-2013
WE IT R ON
MXTA42
SOT-89 Outline Dimensions
unit:mm
SOT-89
E
G
A
H
C
J
B
K
Dim
A
B
C
D
E
G
H
J
K
L
D
L
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Min
Max
1.600
1.400
0.520
0.320
0.560
0.360
0.440
0.350
4.600
4.400
1.800
1.400
2.600
2.300
4.250
3.940
1.500TYP
3.100
2.900
03-Sep-2013