BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGS + 20 - V ID 130 mA Pulsed Drain Current(tp 10us) IDM 520 mA Power Dissipation (TA=25 C) PD 225 mW R JA 556 C/W TJ, Tstg -55 to 150 C Continuous Drain Current (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Device Marking BSS84=PD WEITRON http://www.weitron.com.tw BSS84 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Typ V(BR)DSS 50 - - V VGS (th) 0.8 - 2.0 V IGSS - - +60 - uA IDSS - - 0.1 15 uA rDS (on) - 5.0 10 gfs 50 - - Ciss - 30 - Coss - 10 - Crss - 5.0 - Turn-On Time VDD =-15V, I D=-2.5A, R L =50 td(on) - 25 - Rise Time VDD =-15V, I D=-2.5A, R L =50 tr - 1.0 - Turn-Off Time VDD =-15V, I D=-2.5A, R L =50 td(off ) - 16 - Fall Time VDD =-15V, I D=-2.5A, R L =50 tf - 8.0 - QT - 6000 - Continuous Current IS - - 0.130 Pulsed Current I SM - - 0.520 Forward Voltage (2) VSD - 2.5 - Characteristic Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=1.0 mA Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=25V, VGS=0V VDS=50V, VGS=0V Drain-Source On-Resistance VGS=5.0V, ID=100mA Forward Transconductance VDS=25V, ID=100mA, f=1.0KHZ mS Dynamic Input Capacitance VDS=5V, VGS=0V, f=1MHZ Output Capacitance VDS=5V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=5V, VGS=0V, f=1MHZ PF Switching (2) Gate Charge nS nS PC Source-Drain Diode Characteristics Note: 1. Pulse Test : PW 300us, Duty Cycle 2%. 2. Switching Time is Essentially Independent of Operating Temperature. WEITRON http://www.weitron.com.tw A V BSS84 TYPICAL ELECTRICAL CHARACTERISTICS 0.6 - 55 C 150 C 3.25 V 0.4 0.35 0.4 0.3 0.3 3.0 V 0.25 0.2 0.2 2.75 V 0.15 0.1 0 2.5 V 0.1 2.25 V 0.05 1 1.5 2 2.5 3 3.5 0 4 0 VGS , GATE- TO- SOURCE VOLTAGE (VOLTS) VGS = 4.5 V 8 150 C 7 6 25 C 5 4 - 55 C 3 2 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (AM PS) FIG3. On-Resistance versus Drain Current WEITRON http://www.weitron.com.tw 2 3 4 5 6 7 8 9 10 FIG2. On-Region Characteristics 0.6 R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS) 9 1 VDS , DRAIN- TO- SOURCE VOLTAGE (VOLTS) FIG1. Transfer Characteristics R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS) VGS = 3.5 V TJ = 25 C 0.45 0.5 I D , DRAIN CURRENT (AM PS) I D , DRAIN CURRENT (AM PS) 0.5 25 C VDS = 10 V 7 150 C VGS = 10 V 6.5 6 5.5 5 4.5 4 25 C 3.5 3 - 55 C 2.5 2 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (AM PS) FIG4. On-Resistance versus Drain Current 0.6 2 1.8 VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) BSS84 VGS = 10 V ID = 0.52 A 1.6 1.4 VGS = 4.5 V ID = 0.13 A 1.2 1 0.8 0.6 - 55 -5 45 95 8 6 5 4 ID = 0.5 A 3 2 1 0 145 VDS = 40 V TJ = 25 C 7 0 1000 500 TJ , JUNCTION TEMPERATURE ( C) FIG6. Gate Charge FIG5. On-Resistance Variation with Temperature I D , DIODE CURRENT (AMPS) 1 TJ = 150 C 0.1 25 C -55 C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 VSD, DIODE FORWARD VOLTAGE (VOLTS) FIG7. Body Diode Forward Voltage WEITRON http://www.weitron.com.tw 1500 QT, TOTAL GATE CHARGE (pC) 3.0 2000