WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 ID -4.2 I DM -30 PD 1.4 W R θJA 140 ˚C/W TJ , Tstg -55~+150 Continuous Drain Current 3 ,(T A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range Unit V A ˚C Device Marking WTC2305=PO5 WEITRON http//:www.weitron.com.tw 1/4 Rev.B 05-Jun-09 WTC2305 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max V(BR)DSS -30 - - Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA V Gate-Source Threshold Voltage VGS(Th) -0.7 - -1.3 I GSS - - ±100 nA I DSS - - -1 μA R DS(o n) - 53 64 86 70 85 130 mΩ g fs 7 11 - S Total Gate Charge VDS = -15V, ID = -4A, VGS = -4.5V Qg - 6.36 - nC Gate-Source Charge VDS = -15V, ID = -4A, VGS = -4.5V Qgs - 1.79 - nC Gate-Drain Charge VDS = -15V, ID = -4A, VGS = -4.5V Qgd - 1.42 - nC Turn-On Delay Time VDD = -15V, RL= 3.6Ω , ID = -1A, VGEN = -10V , RG = 6Ω td(on) 11.36 ns Turn-On Rise Time VDD = -15V, RL= 3.6Ω , ID = -1A, VGEN = -10V , RG = 6Ω tr 2.32 ns Turn-Off Delay Time VDD = -15V, RL= 3.6Ω , ID = -1A, VGEN = -10V , RG = 6Ω td(off) 34.88 ns Turn-Off Fall Time VDD = -15V, RL= 3.6Ω ID = -1A, VGEN = -10V , RG = 6Ω tf 3.52 ns Input Capacitance VDS = -15V, VGS = 0V , f = 1.0 MHz Ciss 826.18 pF Output Capacitance VDS = -15V, VGS = 0V , f = 1.0 MHz Coss 90.74 pF Reverse Transfer Capacitance VDS = -15V, VGS = 0V , f = 1.0 MHz Crss 53.18 pF VDS =VGS ,I D =-250 μA Gate-Source Leakage C urrent VGS = ±12V Drain- Source Leakage Current(Tj=25˚C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS=-10V,ID=-4.2A VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-1.0A Forward Transconductance VDS =-5.0V, ID =-5.0A Dynamic Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = -1.0A, VGS = 0V IS -2.2 A VSD -1 V Note: 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding 3. Guaranteed by design; not subject to production testing WEITRON http//:www.weitron.com.tw 2/4 Rev.B 05-Jun-09 WTC2305 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 Rev.B 05-Jun-09 WTC2305 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 Rev.B 05-Jun-09