2SA812 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC -150 mA Total Device Dissipation FR-5 Board, TA=25°C Derate above 25°C PD 200 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation Alumina Substrate, T A=25°C Derate above 25°C PD 200 2.4 mW mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction Temperature Tj -55 to +150 °C Storage Temperature Tstg -55 to +150 °C WEITRON http://www.weitron.com.tw 1/5 14-Jun-2011 2SA812 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50µA, I E = 0A V(BR)CBO -60 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A V(BR)CEO -50 - - V Emitter-Base Breakdown Voltage IE= -50µA, I C=0 V(BR)EBO -6 - - V ICBO - - -0.1 µA IEBO - - -0.1 µA Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA VCE(sat) - -0.18 -0.3 V Collector-Emitter Voltage IE = -1mA, VCE = -6V, VBE(on) -0.58 -0.62 -0.68 V DC Current Transfer Ration VCE = -6V, IC = -1mA hFE 120 - 560 fT - 180 - MHz C obo - 4.5 - pF VCB = -50V, IE = 0A VEB = -6V, I C = 0A ON CHARACTERISTICS SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-6V, IC = -10mA Output Capacitance VCE = -10V, IE=0, f=1.0MHz CLASSIFICATION hFE Rank Q R S Range 120-270 180-390 270-560 Marking M8 M6 M7 WEITRON http://www.weitron.com.tw 2/5 14-Jun-2011 2SA812 –50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –20 –35.0 –10 VCE= –10 V T A = 100°C 25°C – 40°C –10 –50 –2 –1 –0.5 T A = 25°C –28.0 –8 –24.5 –21.0 –6 –17.5 –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 –0.1 I B =0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 –0.4 Fig.1 Grounded emitter propagation characteristics –1.2 –1.6 –2.0 Fig.2 Grounded emitter output characteristics( ) –100 500 T A = 25°C 500 450 400 350 300 –80 –60 VCE= –5 V –3V –1V T A = 25°C h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) –250 –200 –150 –40 –100 –20 –50 µA 200 100 50 I B =0 0 0 –1 –2 –3 –4 –5 –0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) T A = 100°C 25°C –40°C 200 100 50 VCE= – 6V –0.2 –0.5 –1 –2 –5 –10 –20 –50 –1 –2 –5 –10 –20 –50 –100 Fig.4 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 500 –0.5 I C, COLLECTOR CURRENT (mA) Fig.3 Grounded emitter output characteristics( ) h FE, DC CURRENT GAIN –31.5 –100 –1 T A = 25°C –0.5 –0.2 I C /I B = 50 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) collector current ( ) WEITRON http://www.weitron.com.tw 3/5 14-Jun-2011 1000 –1 T A = 25°C V CE = –12V I C /I B = 10 f r , TRANSITION FREQUENCY(MHz) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 2SA812 –0.5 –0.2 T A = 100°C 25°C –40°C –0.1 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 500 200 100 50 –0.2 –100 –1 –2 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) –0.5 20 Fig.8 Gain bandwidth product vs. emitter current T A = 25°C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 –0.5 –1 –2 –5 –10 –20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage WEITRON http://www.weitron.com.tw 4/5 14-Jun-2011 2SA812 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 5/5 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 14-Jun-2011