KTA1505 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(TA=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -500 mA Total Device Dissipation TA=25°C PD 150 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C WEITRON http://www.weitron.com.tw 1/3 27-Apr-07 KTA1505 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -100µA, IE = 0A V(BR)CBO -35 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A V(BR)CEO -30 - - V Emitter-Base Breakdown Voltage IE= -100µA, IC =0 V(BR)EBO -5.0 - - V Collector Cutoff Current VCB = -35V, IE = 0A ICBO - - -0.1 µA Emitter Cutoff Current VEB = -5V, IC = 0A IEBO - - -0.1 µA VCE(sat) - - -0.25 V 70 25 - 400 - fT - 200 - MHz Cob - 13 - pF ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA DC Current Transfer Ration VCE = -1V, IC = -100mA VCE = -6V, IC = -400mA hFE SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-6V, IC = -20mA Celloctor Output Capacitance VCE=-6V, IE = 0, f=1MHz CLASSIFICATION hFE Rank O Y GR Range 70-140 120-240 200-400 Marking AZO AZY AZG WEITRON http://www.weitron.com.tw 2/3 27-Apr-07 KTA1505 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 3/3 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 27-Apr-07