WEITRON 2SB1386_05

2SB1386
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
Features:
1
2
3
SOT-89
* Excellent DC Current Gain Characteristics
* Low VCE(Sat)
Mechanical Data:
* Case : Molded Plastic
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Symbol
Value
Unit
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-20
V
Collector to Base Voltage
VEBO
-6
V
Collector Current
IC
-5
A
Total Device Disspation TA = 25°C
PD
0.5
W
Junction Temperature
Tj
+150
˚C
Storage Temperature
Tstg
-55 to +150
˚C
Rating
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2SB1386
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC=-50µA, IE=0
BVCBO
-30
-
-
V
Collector-Emitter Breakdown Voltage
IC=-1.0mA, IB=0
BVCEO
-20
-
-
V
Emitter-Base Breakdown Voltage
IE=-50µA, IC=0
BVEBO
-6
-
-
V
Collector Cut-Off Current
VCB=-20V, IE=0
ICBO
-
-
-500
nA
Emitter-Cut-Off Current
VEB=-5V, IC=0
IEBO
-
-
-500
nA
hFE(1)
82
-
390
-
VCE(sat)
-
-
-1.0
V
ON CHARACTERISTICS
DC Current Gain
VCE=-2V, IC=-0.5A
Collector-Emitter Saturation Voltage
IC=-4A, IB=-0.1A
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-6V, IE=-50mA, f=30MHz
Output Capacitance
VCB=-20V, IE=0, f=1.0MHz
fT
-
120
-
MHz
Cob
-
60
-
pF
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
Range
82 - 180
120 - 270
180 - 390
Marking
BHP
BHQ
BHR
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2SB1386
5k
5k
TA=25°C
1k
500
200
100
−2V
−1V
50
20
10
1k
500
200
100
50
20
5
−5 −10
−1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
COLLECTOR CURRENT : IC(A)
Fig.2 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−5
TA=25°C
−2
−1
−0.5
−0.2
IC/IB=50/1
40/1
/1
30/1
10/1
−0.1
−0.05
−0.02
−0.01
−2m −5m −0.01 -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
−5 −10
COLLECTOR CURRENT : IC(A)
−5
lC/lB=40
−2
−25°C
−1
25°C
−0.5
−0.2
−0.1
−0.05
Ta=100°C
−0.02
−0.01
−2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
−5 −10
COLLECTOR CURRENT : IC(A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
−5 −10
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=100°C
25°C
−25°C
10
5
−1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
VCE= −2V
2k
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
2k
Fig.4 Collector-emitter saturation voltage
vs. collector current
TA=25°C
f=1MHz
IE=0A
500
200
100
50
20
10
−0.1 −0.2 −0.5 −1
−2
−5 −10 −20
−50
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.5 Collector output capacitance
vs. collector-base voltage
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2SB1386
SOT-89 Outline Dimensions
Dim
E
G
H
B
K
A
B
C
D
E
G
H
J
K
L
A
C
J
unit:mm
D
L
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SOT-89
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
28-Oct-05