2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER Features: 1 2 3 SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Symbol Value Unit Collector to Base Voltage VCBO -30 V Collector to Emitter Voltage VCEO -20 V Collector to Base Voltage VEBO -6 V Collector Current IC -5 A Total Device Disspation TA = 25°C PD 0.5 W Junction Temperature Tj +150 ˚C Storage Temperature Tstg -55 to +150 ˚C Rating WEITRON http://www.weitron.com.tw 1/4 28-Oct-05 2SB1386 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=-50µA, IE=0 BVCBO -30 - - V Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 BVCEO -20 - - V Emitter-Base Breakdown Voltage IE=-50µA, IC=0 BVEBO -6 - - V Collector Cut-Off Current VCB=-20V, IE=0 ICBO - - -500 nA Emitter-Cut-Off Current VEB=-5V, IC=0 IEBO - - -500 nA hFE(1) 82 - 390 - VCE(sat) - - -1.0 V ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz fT - 120 - MHz Cob - 60 - pF CLASSIFICATION OF hFE(1) Rank P Q R Range 82 - 180 120 - 270 180 - 390 Marking BHP BHQ BHR WEITRON http://www.weitron.com.tw 2/4 28-Oct-05 2SB1386 5k 5k TA=25°C 1k 500 200 100 −2V −1V 50 20 10 1k 500 200 100 50 20 5 −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC(A) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −5 TA=25°C −2 −1 −0.5 −0.2 IC/IB=50/1 40/1 /1 30/1 10/1 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01 -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC(A) −5 lC/lB=40 −2 −25°C −1 25°C −0.5 −0.2 −0.1 −0.05 Ta=100°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC(A) Fig.3 Collector-emitter saturation voltage vs. collector current 1000 −5 −10 COLLECTOR CURRENT : IC(A) Fig.1 DC current gain vs collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=100°C 25°C −25°C 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VCE= −2V 2k DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 2k Fig.4 Collector-emitter saturation voltage vs. collector current TA=25°C f=1MHz IE=0A 500 200 100 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Collector output capacitance vs. collector-base voltage WEITRON http://www.weitron.com.tw 3/4 28-Oct-05 2SB1386 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 4/4 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 28-Oct-05