2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 3 2 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -2.0 A Collector Power Dissipation PD 1.5 W Junction Temperature Tj +150 ˚C Tstg -55 to +150 ˚C Rating Storage Temperature Range ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-50µA Collector-Emitter Breakdown Voltage IC=-1.0mA Emitter-Base Breakdown Voltage IE=-50µA Symbol Min Typ Max Unit BVCBO -40 - - V BVCEO -32 - - V BVEBO -5.0 - - V ICBO - - -1.0 µA IEBO - - -1.0 µA VCB=-20V VEB =-4.0V WEITRON http://www.weitron.com.tw 1/5 30-Nov-07 2SB1182 ON CHARACTERISTICS DC Current Gain VCE=-3V, IC=-500mA Collector-Emitter Saturation Voltage IC =-2A, IB =-200mA hFE(1) 82 - 390 VCE(sat) - - -0.8 V - DYNAMIC CHARACTERISTICS Transition Frequency VCE=-5V, IC =-500mA, f=30MHz Output Capacitance VCB=-10V, I E =0, f=1.0MHz fT - 100 - MHz Cob - 50 - pF CLASSIFICATION OF hFE(1) Rank P Q R Range 82 - 180 120 - 270 180 - 390 WEITRON http://www.weitron.com.tw 2/5 30-Nov-07 2SB1182 Typical Characteristics −0.5 VCE= −3V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) −1000 Ta=100°C 25°C −500 −40°C −200 −100 −50 −20 −10 −5 −2 −1 0 −1.5mA −1.25mA −1mA −750µA −500µA −250µA 0 50 200 100 50 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −50 −100 −200 −500 −1000 −2000 Fig.4 DC current gain vs. collector current ( ) Fig.3 DC current gain vs. collector curren ( ) −500 Ta=25°C −200 IC/IB=50 20 10 −50 −100 −200 −500 −1000 −2000 −500 lC/lB=10 −200 −100 −50 Ta=100°C 25°C −40°C −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) WEITRON −5 −10 −20 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) http://www.weitron.com.tw IB=0A −1.6 −2 Ta=100°C 25°C −25°C −50 −100 −200 −500 −1000 −2000 −5 −10 −20 −1.2 VCE= −3V 500 100 −50 −0.8 Fig.2 Grounded emitter output characteristics VCE= −6V −3V −1V −100 −0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE −1.75mA −0.1 Ta=25°C −5 −10 −20 −2mA −0.2 Fig.1 Grounded emitter propagation characteristics 20 −2.25mA −0.3 BASE TO EMITTER VOLTAGE : VBE (V) 200 −2.5mA −0.4 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 500 Ta=25°C 3/5 30-Nov-07 2SB1182 Ta=25°C −1 IC /IB=10 −0.5 −0.2 −0.1 −0.05 −5 −10 −20 TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat)(V) Typical Characteristics Ta=25°C VCE= −5V 500 200 100 50 5 −50 −100 −200 −500 −1000 −2000 200 100 Cob 50 20 10 −0.5 −1 −2 −5 −10 −5 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0A −20 −30 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) WEITRON 100 200 500 1000 2000 −2 IC Max. (Pulse) PW=500µs DC −1 −0.5 PW=1ms PW=100ms −0.2 −0.1 −0.05 Ta=25°C ?Single nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −0.02 −2 −5 −10 −20 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.weitron.com.tw 50 Fig.8 Gain bandwidth product vs. emitter current Fig.7 Base-emitter saturation voltage vs. collector current Cib 20 EMITTER CURRENT : IE (mA) COLLETOR CURRENT : IC (mA) 300 10 4/5 30-Nov-07 2SB1182 TO-252 Outline Dimensions unit:mm TO-252 E A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 5/5 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 30-Nov-07