WEITRON 2SB1197_07

2SB1197
PNP General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-800
mA
Total Device Dissipation
TA=25°C
PD
200
mW
Junction Temperature
Tj
+150
°C
Storage Temperature
Tstg
-55 to +150
°C
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
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L
M
1/3
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
10-Jan-07
2SB1197
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = -50µA, I E = 0A
V(BR)CBO
-40
-
-
V
Collector-Emitter Breakdown Voltage
IC = -1mA, IB = 0A
V(BR)CEO
-32
-
-
V
Emitter-Base Breakdown Voltage
IE= 50µA, I C=0
V(BR)EBO
-5.0
-
-
V
Collector Cutoff Current
VCB = -20V, IE = 0A
ICBO
-
-
-0.5
µA
Emitter Cutoff Current
VEB = -4V, IC = 0A
IEBO
-
-
-0.5
µA
VCE(sat)
-
-
-0.5
V
hFE
82
-
390
fT
50
Cob
-
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -50mA
DC Current Transfer Ration
VCE = -3V, IC = -100mA
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
VCE=-5V, IC = -50mA, f=100MHz
Collector output capacitane
VCB=-10V, I E = 0mA, f=1MHz
-
-
MHz
30
-
pF
CLASSIFICATION hFE
Range
82-180
120-270
180-390
Marking
P
Q
R
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10-Jan-07
2SB1197
−1000
−500
−200
Ta=25°C
VCE=6V
COLLECTOR CURRENT : IC (mA)
−200
−100
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
0
Ta=25°C
−0.4
Fig.1
−0.8
−1.2
−160
−120
−0.6mA
−100
−0.5mA
−80
−0.4mA
−60
−0.3mA
−0.2mA
−40
−0.1mA
IB=0mA
−4
−8
−12
−16
Fig.2
Grounded emitter output
characteristics ( )
1k
−14mA
−16mA
−18mA
−400 −20mA
DC CURRENT GAIN : hFE
−300
A
A
−4m
−200
IB = − 2
Ta=25°C
500
mA 10mA
−12
−
A
−8m
− 6m
−20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Grounded emitter propagation
characteristics
mA
−100
200
100
VCE= −3V
−2V
−1V
50
20
10
5
2
0
0
−0.2
−0.4
−0.6
Ta=25°C
−0.8
−1.0
1
−1m
Fig.3
1000
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C
−500
−200
−100
IC/IB=50
−20
20
10
−10
−5
−2
−1
−1m
Fig.4
Grounded emitter output
characteristics ( )
−1000
−10m
−100m
−1
Collector-emitter saturation
voltage vs. collector current
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Ta=25°C
VCE= −5V
500
200
100
50
20
10
5
2
1
1m
COLLECTOR CURRENT : IC (A)
Fig.5
−10m
−1
10m
100m
1
DC current gain vs.
collector current
1000
Gain bandwidth product vs.
emitter current
3/3
Ta=25°C
f=1MHz
IE=0A
500
200
100
EMITTER CURRENT : IE (A)
Fig.6
−100m
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
−0.8mA
−0.7mA
−140
0
0
−1.6
−500
−50
A
−1.0m
−0.9mA
−20
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
−180
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
COLLECTOR CURRENT : IC (mA)
Electrical characteristic curves
Cib
50
Cob
20
10
5
2
1
−0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
10-Jan-07