2SB1197 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -800 mA Total Device Dissipation TA=25°C PD 200 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 1/3 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 10-Jan-07 2SB1197 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50µA, I E = 0A V(BR)CBO -40 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A V(BR)CEO -32 - - V Emitter-Base Breakdown Voltage IE= 50µA, I C=0 V(BR)EBO -5.0 - - V Collector Cutoff Current VCB = -20V, IE = 0A ICBO - - -0.5 µA Emitter Cutoff Current VEB = -4V, IC = 0A IEBO - - -0.5 µA VCE(sat) - - -0.5 V hFE 82 - 390 fT 50 Cob - ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA DC Current Transfer Ration VCE = -3V, IC = -100mA SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-5V, IC = -50mA, f=100MHz Collector output capacitane VCB=-10V, I E = 0mA, f=1MHz - - MHz 30 - pF CLASSIFICATION hFE Range 82-180 120-270 180-390 Marking P Q R WEITRON http://www.weitron.com.tw 2/3 10-Jan-07 2SB1197 −1000 −500 −200 Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) −200 −100 −50 −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 0 Ta=25°C −0.4 Fig.1 −0.8 −1.2 −160 −120 −0.6mA −100 −0.5mA −80 −0.4mA −60 −0.3mA −0.2mA −40 −0.1mA IB=0mA −4 −8 −12 −16 Fig.2 Grounded emitter output characteristics ( ) 1k −14mA −16mA −18mA −400 −20mA DC CURRENT GAIN : hFE −300 A A −4m −200 IB = − 2 Ta=25°C 500 mA 10mA −12 − A −8m − 6m −20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics mA −100 200 100 VCE= −3V −2V −1V 50 20 10 5 2 0 0 −0.2 −0.4 −0.6 Ta=25°C −0.8 −1.0 1 −1m Fig.3 1000 TRANSITION FREQUENCY : fT (MHz) Ta=25°C −500 −200 −100 IC/IB=50 −20 20 10 −10 −5 −2 −1 −1m Fig.4 Grounded emitter output characteristics ( ) −1000 −10m −100m −1 Collector-emitter saturation voltage vs. collector current WEITRON http://www.weitron.com.tw Ta=25°C VCE= −5V 500 200 100 50 20 10 5 2 1 1m COLLECTOR CURRENT : IC (A) Fig.5 −10m −1 10m 100m 1 DC current gain vs. collector current 1000 Gain bandwidth product vs. emitter current 3/3 Ta=25°C f=1MHz IE=0A 500 200 100 EMITTER CURRENT : IE (A) Fig.6 −100m COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) −0.8mA −0.7mA −140 0 0 −1.6 −500 −50 A −1.0m −0.9mA −20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) −180 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (mA) Electrical characteristic curves Cib 50 Cob 20 10 5 2 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10-Jan-07