KTA1504 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -150 mA Total Device Dissipation TA=25°C PD 150 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C Rating WEITRON http://www.weitron.com.tw 1/3 03-Nov-06 KTA1504 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -100µA, IB = 0A V(BR)CBO -50 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IE = 0A V(BR)CEO -50 - - V Emitter-Base Breakdown Voltage IE= 100µA, IC=0 V(BR)EBO -5.0 - - V Collector Cutoff Current VCB = -50V, IE = 0A ICBO - - -0.1 µA Emitter Cutoff Current VEB = -5V, IC = 0A IEBO - - -0.1 µA VCE(sat) - - -0.3 V hFE 70 - 400 ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA DC Current Transfer Ration VCE = -6V, IC = -2mA SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-10V, I C = -1mA fT 80 - MHz - CLASSIFICATION hFE Rank O Y GR Range 70-140 120-240 200-400 Marking ASO ASY ASG WEITRON http://www.weitron.com.tw 2/3 03-Nov-06 KTA1504 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 3/3 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 03-Nov-06