2SA1694 Pb Free Plating Product ® Pb 2SA1694 Silicon PNP Epitaxial Planar Transistor 2SA1694 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PI package ·Complement to type 2SC4467 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 1 2 3 Fig.1 simplified outline (TO-3PI) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A IB Base current -3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Tc=25℃ Page 1/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SA1694 ® 2SA1694 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 µA hFE DC current gain IC=-3A ; VCE=-4V COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 300 pF fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz 0.14 µs 1.40 µs 0.21 µs -120 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=-4A;RL=10B IB1=- IB2=-0.4A VCC=-40V hFE Classifications O P Y 50-100 70-140 90-180 Page 2/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SA1694 Silicon PNP Power Transistors ® 2SA1694 Page 3/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SA1694 ® 2SA1694 Silicon PNP Power Transistors TO-3PI PACKAGE OUTLINE UNIT:mm Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Page 4/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/