2SA1694 2SA1694 - Thinki Semiconductor Co.,Ltd.

2SA1694
Pb Free Plating Product
®
Pb
2SA1694
Silicon PNP Epitaxial Planar Transistor
2SA1694
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PI package
·Complement to type 2SC4467
APPLICATIONS
·Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
1
2
3
Fig.1 simplified outline (TO-3PI) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-8
A
IB
Base current
-3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Tc=25℃
Page 1/4
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SA1694
®
2SA1694
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
µA
hFE
DC current gain
IC=-3A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
300
pF
fT
Transition frequency
IC=-0.5A ; VCE=-12V
20
MHz
0.14
µs
1.40
µs
0.21
µs
-120
UNIT
V
50
180
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-4A;RL=10B
IB1=- IB2=-0.4A
VCC=-40V
hFE Classifications
O
P
Y
50-100
70-140
90-180
Page 2/4
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SA1694
Silicon PNP Power Transistors
®
2SA1694
Page 3/4
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SA1694
®
2SA1694
Silicon PNP Power Transistors
TO-3PI PACKAGE OUTLINE
UNIT:mm
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Page 4/4
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/